1300°C Annealing of 1×1020 Al+ Ion Implanted 3C-SiC
Roberta Nipoti,Maria Concetta Canino,Filippo Bonafè,Frank Torregrosa,Sylvain Monnoye,Hugues Mank,Marcin Zielinski +6 more
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In this article, the results of the first experiments for achieving the thermal equilibrium during 1300 °C annealing of 1×1020 cm-3 ion implanted Al+ in 3C-SiC are shown.Abstract:
The results of the first experiments for achieving the thermal equilibrium during 1300 °C annealing of 1×1020 cm-3 ion implanted Al+ in 3C-SiC are shown. X-ray diffraction, through reciprocal space maps and 2Θ scans, characterizes the 3C-SiC lattice recovery. The achievement of a ohmic behavior of Ni/Al/Ti alloy indicates the onset of a measurable electrical activation of the Al implanted layer. The Al electrical activation is qualified through the implanted layer sheet resistance.read more
Citations
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Journal ArticleDOI
4H‐SiC surface morphology after Al ion implantation and annealing with C‐cap
TL;DR: A combination of low roughness parameter and high correlation length identify the transition from ripples to jagged morphology.
Journal ArticleDOI
1300°C Annealing of 1 × 1020 cm−3 Al+ Ion Implanted 3C-SiC/Si
Journal ArticleDOI
Ion implantation and activation of aluminum in bulk 3C-SiC and 3C-SiC on Si
Frank Torregrosa,Mariaconcetta Canino,F. Tamarri,B. Roux,S. Morata,F. La Via,Marcin Zielinski,Roberta Nipoti +7 more
TL;DR: In this article , a fully implanted PiN vertical diode on bulk 3C-SiC wafers is presented, and results using long furnace anneal at temperature > 1400°C as well as laser annealing are presented.
References
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BookDOI
Semiconductor Material and Device Characterization: Schroder/Semiconductor Material and Device Characterization, Third Edition
Semiconductor Material and Device Characterization, 3rd Edition
Abstract: DESCRIPTION This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques.
Journal ArticleDOI
Carbon-Cap for Ohmic Contacts on Ion-Implanted 4H-SiC
Roberta Nipoti,Fulvio Mancarella,Francesco Moscatelli,Rita Rizzoli,Stefano Zampolli,M. Ferri +5 more
TL;DR: In this paper, a pyrolyzed photoresist film called carbon-cap (C-cap) is used as a protective cap of the surface of ion-implanted 4H-SiC wafers during the postimplantation annealing process with the aim to prevent Si sublimation and step bunching formation.
Journal ArticleDOI
Excellent Rectifying Properties of the n-3C-SiC/p-Si Heterojunction Subjected to High Temperature Annealing for Electronics, MEMS, and LED Applications.
Philip Tanner,Alan Iacopi,Hoang-Phuong Phan,Sima Dimitrijev,Leonie Hold,Kien Chaik,Glenn M. Walker,Dzung Viet Dao,Nam-Trung Nguyen +8 more
TL;DR: Results showing that the heterojunction maintains excellent diode characteristics following heat treatment up to 1100 °C are presented, and while some changes were observed between 1100°C and 1300C, diodes maintained their rectifying characteristics, enabling compatibility with a large range of device fabrication.
Journal ArticleDOI
About the Electrical Activation of 1×1020 cm-3 Ion Implanted Al in 4H-SiC at Annealing Temperatures in the Range 1500 - 1950°C
TL;DR: In this article, the electrical activation of 1×1020 cm-3 implanted Al in 4H-SiC has been studied in the temperature range 1500 - 1950 °C by the analysis of the sheet resistance of the Al implanted layers, as measured at room temperature.