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Figure 1. (a) SIMS Al depth profiles of the 5 min and 40 min annealed 4H-SiC samples. (b) Schematic representation of the Al depth profiles of (a).
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Journal Article
•
DOI
•
1950°C Post Implantation Annealing of Al+ Implanted 4H-SiC: Relevance of the Annealing Time
[...]
Paolo Fedeli
,
M. Gorni
1
,
Alberto Carnera
2
,
Antonella Parisini
1
,
Giovanni Alfieri
,
Ulrike Grossner
,
Roberta Nipoti
- Show less
+3 more
•
Institutions (2)
University of Parma
1
,
University of Padua
2
01 Jan 2016
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ECS Journal of Solid State Science and Technology