FIG. 3. (a) Transfer I-V of PS/DNTT device writing with þ100 V gate bias and different incident light intensities, the dotted line is plotted at VG¼ 60 V in Fig. 3(c). The device was erased by 150 V gate bias for 10 s after each measurement to guarantee the same starting state for each measurement. (b) Threshold voltage shift of transistor as a function of incident LED power intensity. (c) Drain-source current value at VG¼ 60 V obtained from Fig. 3(a) plotted against LED power intensity, the leftmost point represents the current measured in the dark.
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