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Fig. 3. Experimental and simulated breakdown voltages of the STJTE and double-JTE devices as a function of the remaining dose of
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Content maybe subject to copyright
Journal Article
•
DOI
•
5.8-kV Implantation-Free 4H-SiC BJT With Multiple-Shallow-Trench Junction Termination Extension
[...]
Hossein Elahipanah
1
,
Arash Salemi
1
,
Carl-Mikael Zetterling
1
,
Mikael Östling
1
•
Institutions (1)
Royal Institute of Technology
1
01 Jan 2015
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IEEE Electron Device Letters