60 keV Ar+-ion induced modification of microstructural, compositional, and vibrational properties of InSb
TL;DR: In this article, room temperature irradiation of InSb(111) by 60 keV Ar+-ions at normal (0°) and oblique (60°) angles of incidence led to the formation of nanoporous structure in the high fluence regime of 1.5 cm−2.
Abstract: Room temperature irradiation of InSb(111) by 60 keV Ar+-ions at normal (0°) and oblique (60°) angles of incidence led to the formation of nanoporous structure in the high fluence regime of 1 × 1017 to 3 × 1018 ions cm−2. While a porous layer comprising of a network of interconnected nanofibers was generated by normal ion incidence, evolution of plate-like structures was observed for obliquely incident ions. Systematic studies of composition and structure using energy dispersive x-ray spectroscopy, Raman spectroscopy, x-ray photoelectron spectroscopy, Raman mapping, grazing incidence x-ray diffraction, and cross-sectional transmission electron microscopy revealed a high degree of oxidation of the ion-induced microstructures with the presence of In2O3 and Sb2O3 phases and presence of nanocrystallites within the nanoporous structures. The observed structural evolution was understood in terms of processes driven by ion-induced defect accumulation within InSb.
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TL;DR: Although the same number of point defects were created in each case, different structures were formed on the different surfaces, and the depth direction density of the point defects was an important factor in this trend.
Abstract: Ion beam irradiation-induced nanoporous structure formation was investigated on GaSb, InSb, and Ge surfaces via controlled point defect creation using a focused ion beam (FIB). This paper compares the nanoporous structure formation under the same extent of point defect creation while changing the accelerating voltage and ion dose. Although the same number of point defects were created in each case, different structures were formed on the different surfaces. The depth direction density of the point defects was an important factor in this trend. The number of point defects required for nanoporous structure formation was 4 × 1022 vacancies/m² at a depth of 18 nm under the surface, based on a comparison of similar nanoporous structure features in GaSb. The nanoporous structure formation by ion beam irradiation on GaSb, InSb, and Ge surfaces was controlled by the number and areal distribution of the created point defects.
15 citations
TL;DR: The shapes of the structures formed by superimposed ion beam irradiation were affected by primary irradiation conditions, and the nanostructural features on the InSb surface were easy to control by changing the ion beam conditions.
Abstract: Nanoporous structures have a great potential for application in electronic and photonic materials, including field effect transistors, photonic crystals, and quantum dots. The control of size and shape is important for such applications. In this study, nanoporous structure formation on the indium antimonide (InSb) surface was investigated using controlled focused ion beam irradiation. Upon increasing the ion dose, the structures grew larger, and the shapes changed from voids to pillars. The structures also became larger when the ion flux (high-dose) and accelerating voltage were increased. The structure grew obliquely on the substrate by following the ion beam irradiation of 45°. The shapes of the structures formed by superimposed ion beam irradiation were affected by primary irradiation conditions. The nanostructural features on the InSb surface were easy to control by changing the ion beam conditions.
8 citations
TL;DR: In this article, it was shown that amorphous InSb films become polycrystalline foams upon irradiation with 17 MeV Au+7 ions at fluences above 1014 cm−2.
Abstract: InSb films with various thicknesses were deposited by magnetron sputtering on SiO2/Si substrates and subsequently irradiated with 17 MeV Au+7 ions. The structural and electronic changes induced by ion irradiation were investigated by synchrotron and laboratory based techniques. Ion irradiation of InSb transforms compact films (amorphous and polycrystalline) in open cell solid foams. The initial stages of porosity were investigated by transmission electron microscopy analysis and reveal the porous structure initiates as small spherical voids with approximately 3 nm in diameter. The evolution of porosity was investigated by scanning electron microscopy images, which show that film thickness increases up to 16 times with increasing irradiation fluence. Here we show that amorphous InSb films become polycrystalline foams upon irradiation with 17 MeV Au+7 ions at fluences above 1014 cm−2. The films attain a zincblende phase, with crystallites randomly oriented, similarly to the polycrystalline structure attained by thermal annealing of unirradiated films.
8 citations
TL;DR: In this paper, the authors showed that the contact angle of a water droplet on the nanoporous InSb surface exceeds 150°, revealing the transition to a super-hydrophobic surface.
Abstract: A porous nanostructure evolves in InSb due to keV ion implantation which leads to superhydrophobic and large antireflective property, indicating a single-step facile fabrication to introduce both functionalities In particular, it is observed that the contact angle of a water droplet on the nanoporous InSb surface exceeds 150°, revealing the transition to a superhydrophobic surface Correlation between the contact angle and the porous nanostructures is qualitatively understood in light of the Cassie-Baxter model It is found that a decrease in the fraction of solid surface wetted by the water droplet and a corresponding increase in the air-water interface fraction lead to the enhancement in the hydrophobicity We further observe that the large broadband antireflection (in the range of 200–800 nm) is also correlated to the nanoporous structure, arising out of a large reduction in the refractive index due to its increasing porosity Such a surface with the combination of superhydrophobicity and large antire
7 citations
TL;DR: In this paper, a high aspect ratio nanocell lattice was fabricated on the InSb semiconductor surface using the migration of point defects induced by ion beam irradiation using a focused ion beam (FIB) system.
6 citations
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TL;DR: An exact derivation of the Scherrer equation is given for particles of spherical shape, values of the constant for half-value breadth and for integral breadth being obtained in this article, and various approximation methods which have been used are compared with the exact calculation.
Abstract: An exact derivation of the Scherrer equation is given for particles of spherical shape, values of the constant for half-value breadth and for integral breadth being obtained. Various approximation methods which have been used are compared with the exact calculation. The tangent plane approximation of v. Laue is shown to be quite satisfactory, but some doubt is cast on the use of approximation functions. It is suggested that the calculation for the ellipsoidal particle based on the tangent plane approximation will provide a satisfactory basis for future work.
6,907 citations
TL;DR: The 3-V ternaries and quaternaries (AlGaIn)(AsSb) lattice matched to GaSb is a promising material for high speed electronic and long wavelength photonic devices.
Abstract: Recent advances in nonsilica fiber technology have prompted the development of suitable materials for devices operating beyond 155 mu m The III-V ternaries and quaternaries (AlGaIn)(AsSb) lattice matched to GaSb seem to be the obvious choice and have turned out to be promising candidates for high speed electronic and long wavelength photonic devices Consequently, there has been tremendous upthrust in research activities of GaSb-based systems As a matter of fact, this compound has proved to be an interesting material for both basic and applied research At present, GaSb technology is in its infancy and considerable research has to be carried out before it can be employed for large scale device fabrication This article presents an up to date comprehensive account of research carried out hitherto It explores in detail the material aspects of GaSb starting from crystal growth in bulk and epitaxial form, post growth material processing to device feasibility An overview of the lattice, electronic, transport, optical and device related properties is presented Some of the current areas of research and development have been critically reviewed and their significance for both understanding the basic physics as well as for device applications are addressed These include the role of defects and impurities on the structural, optical and electrical properties of the material, various techniques employed for surface and bulk defect passivation and their effect on the device characteristics, development of novel device structures, etc Several avenues where further work is required in order to upgrade this III-V compound for optoelectronic devices are listed It is concluded that the present day knowledge in this material system is sufficient to understand the basic properties and what should be more vigorously pursued is their implementation for device fabrication (C) 1997 American Institute of Physics
655 citations
01 Mar 1984-Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms
TL;DR: In this paper, a Monte Carlo code was developed to compute range profiles of implanted ions, composition profiles of the target, and sputtering rates for a dynamically varying target composition, taking into account compositional changes both due to the spatial distribution of target atoms deposited in collision cascades, and due to presence of the implanted ions.
Abstract: Based on the sputtering version of the TRIM program for multicomponent targets, a Monte Carlo code has been developed which computes range profiles of implanted ions, composition profiles of the target and sputtering rates for a dynamically varying target composition. It takes into account compositional changes both due to the spatial distribution of target atoms deposited in collision cascades, and due to the presence of the implanted ions. The local density of the target is allowed to relax according to a given function of the densities of the individual components. The applications of the program cover a wide range of problems like the collisional atomic mixing of multilayered targets, dynamic implantation profiles at large fluences, and the fluence-dependent preferential sputtering of multicomponent materials. The present paper provides a description of the program and a critical comparison to similar Monte Carlo codes. As an application, the behaviour of the Ta-C system under He bombardment is studied with respect to sputtering yields, surface composition and composition profiles. Satisfactory agreement is obtained with experimental results given in the literature.
565 citations
TL;DR: In this article, the progress on three antimonide-based electronic devices: high electron mobility transistors (HEMTs), resonant tunneling diodes (RTDs), and heterojunction bipolar transistors(HBTs) is reviewed.
Abstract: Several research groups have been actively pursuing antimonide-based electronic devices in recent years. The advantage of narrow-bandgap Sb-based devices over conventional GaAs- or InP-based devices is the attainment of high-frequency operation with much lower power consumption. This paper will review the progress on three antimonide-based electronic devices: high electron mobility transistors (HEMTs), resonant tunneling diodes (RTDs), and heterojunction bipolar transistors (HBTs). Progress on the HEMT includes the demonstration of Ka- and W-band low-noise amplifier circuits that operate at less than one-third the power of similar InP-based circuits. The RTDs exhibit excellent figures of merit but, like their InP- and GaAs-based counterparts, are waiting for a viable commercial application. Several approaches are being investigated for HBTs, with circuits reported using InAs and InGaAs bases.
336 citations
TL;DR: In this article, the important device applications of various III-V compound semiconductors are reviewed for optical fiber communications, infrared and visible LEDs/LDs and high efficiency solar cells.
201 citations