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Journal ArticleDOI

6H-SiC blistering efficiency as a function of the hydrogen implantation fluence

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TLDR
In this article, the fraction of the implanted fluence used to pressurize blister cavities was deduced by combining experimental results with Finite Element Method (FEM) modeling.
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This article is published in Applied Surface Science.The article was published on 2019-02-01. It has received 34 citations till now. The article focuses on the topics: Ion implantation & Fluence.

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Microstructural evolution of helium-irradiated 6H–SiC subjected to different irradiation conditions and annealing temperatures: A multiple characterization study

TL;DR: In this paper, the microstructural changes induced by irradiation and subsequent annealing were investigated to assess the suitability of 6H-SiC as a structural material for nuclear applications.
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The structural evolution of light-ion implanted 6H-SiC single crystal: Comparison of the effect of helium and hydrogen

TL;DR: The microstructure evolution of hydrogen-implanted 6H-SiC at different temperatures and fluences is investigated by using various experimental techniques in this article, where the authors found that both migration and coalescence are energetically cheaper in the case of H compared to He.
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Irradiation-induced microstructure damage in He-irradiated 3C-SiC at 1000℃

TL;DR: In this article, the effect of high-temperature helium irradiation on microstructural evolution of 3C-SiC wafers was investigated by the combination of Raman spectroscopy, conventional transmission electron microscopy (TEM) and high resolution transmission electron microscope (HRTEM).
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Interphase boundary layer-dominated strain mechanisms in Cu + implanted Zr-Nb nanoscale multilayers

TL;DR: In this paper, the authors developed a mathematical method for the fundamental understanding of the deformation mechanisms in metallic multilayers subjected to radiation damage, where the cumulative strain within a layer is described as the combination of two contributions coming from the interfacial region and the inner region of the layers.
References
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Journal ArticleDOI

Handbook of SiC properties for fuel performance modeling

TL;DR: In this paper, a compilation of non-irradiated and irradiated properties of SiC are provided and reviewed and analyzed in terms of application to TRISO fuels, specifically in the high-temperature irradiation regime.
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Designing Radiation Resistance in Materials for Fusion Energy

TL;DR: In this article, three fundamental options for designing radiation resistance are outlined: Utilize matrix phases with inherent radiation tolerance, select materials in which vacancies are immobile at the design operating temperatures, or engineer materials with high sink densities for point defect recombination.
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Silicon Carbide Power Transistors: A New Era in Power Electronics Is Initiated

TL;DR: In this paper, it is shown that silicon carbide (SiC) power electronics may have higher voltage ratings, lower voltage drops, higher maximum temperatures, and higher thermal conductivities.
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Advances and challenges in the development of power-generation systems at small scales

TL;DR: The field of micro-scale combustion and power generation is a new frontier of technological development, and only a few projects have been funded as discussed by the authors, however, significant progress has been made to date.
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Observations of suppressed retention and blistering for tungsten exposed to deuterium–helium mixture plasmas

TL;DR: In this paper, the amount of D retained in W was found to decrease significantly when compared with that in W exposed to pure D plasmas, as measured with high resolution thermal desorption spectroscopy.
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