A 1.9-GHz, 1-W CMOS class-E power amplifier for wireless communications
Citations
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Cites methods from "A 1.9-GHz, 1-W CMOS class-E power a..."
...Until now, the highest output powers achieved by fully integrated power amplifiers in standard silicon processes are 85 mW [1] delivered to a differential 50- load with a power-added efficiency (PAE) of 30% and 100 mW with a drain efficiency of 16% [2], both implemented in CMOS technology....
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Cites methods from "A 1.9-GHz, 1-W CMOS class-E power a..."
...Multiple external components such as bonding wires and external baluns have been used as tuned elements to produce output power levels in excess of 1 W using CMOS [1], [2] or Si-Bipolar transistors [3], [4]....
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References
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"A 1.9-GHz, 1-W CMOS class-E power a..." refers background in this paper
...Fig. 1 shows a conceptual picture of a class-E power amplifier [ 7 ], [8]....
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"A 1.9-GHz, 1-W CMOS class-E power a..." refers methods in this paper
...To verify its potential in practical communication applications, the mode-locking class-E PA was tested with a Gaussian minimum shift keying (GMSK) [ 21 ] modulated input signal....
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