A 1V Dual-Band VCO Using an Integrated Variable Inductor

doi:10.1109/ASSCC.2005.251718

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A 1V Dual-Band VCO Using an Integrated Variable Inductor

Proceedings Article•DOI•

A 1V Dual-Band VCO Using an Integrated Variable Inductor

L.L.K. Leung¹, K.W.C. Chui¹, Howard C. Luong¹•Institutions (1)

Hong Kong University of Science and Technology¹

01 Nov 2005-pp 273-276

TL;DR: In this paper, an integrated variable inductor is proposed using an on-chip transformer to obtain two inherent resonant modes for band-switching applications, which can oscillate in two distinct frequency bands from 22 GHz to 36 GHz and from 107 GHz to 113 GHz.

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Abstract: An integrated variable inductor is proposed using an on-chip transformer to obtain 2 inherent resonant modes for band-switching applications Employing such a variable inductor in a 018-mum CMOS process at a 1-V supply, a VCO is demonstrated to oscillate in 2 distinct frequency bands from 22 GHz to 36 GHz and from 107 GHz to 113 GHz The VCO measures phase noise of around -1355 dBc/Hz for the lower band and around -1265dBc/Hz for the upper band at 10-MHz offset while consuming 5mW and occupying an area of 04times08 mm2

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Proceedings Article•DOI•

A 1V 4 GHz-and-10 GHz transformer-based dual-band quadrature VCO in 0.18 μm CMOS

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Sujiang Rong¹, Howard C. Luong¹•Institutions (1)

Hong Kong University of Science and Technology¹

01 Sep 2007

TL;DR: A notch-peak cancellation concept is introduced in transformer-based LC tanks to achieve a dual-band quadrature VCO that measures phase noise at 1 MHz offset and sideband rejection ratios (SBR) while drawing 6 mA and 10 mA.

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Abstract: A notch-peak cancellation concept is introduced in transformer-based LC tanks to achieve a dual-band quadrature VCO. Fabricated in 0.18 μm CMOS process and operated at 1V supply, the QVCO prototype measures a stable dual-band operation from 3.27 GHz to 5.02 GHz and from 9.48 GHz to 11.36 GHz. At 4.2 GHz and 10 GHz, the QVCO measures phase noise at 1 MHz offset of -116.3 dBc/Hz and -112 dBc/Hz, and sideband rejection ratios (SBR) of 49 dB and 47 dB while drawing 6 mA and 10 mA, respectively. The QVCO occupies an active area of 0.88 mm2.

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26 citations

Cites methods from "A 1V Dual-Band VCO Using an Integra..."

...TABLE-I SUMMARY OF QVCO PERFORMANCE AND COMPARISONS WITH OTHER DUAL-BAND VCOS [1] [2] [3] [5] This work Lower Band [GHz] 0....
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...A dual-band VCO was realized by employing an integrated variable inductor [5], but the tuning range in the second band is quite limited....
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Book•

60-GHz CMOS Phase-Locked Loops

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Hammad M. Cheema, Reza Mahmoudi, A.H.M. van Roermund

16 Jul 2011

TL;DR: This chapter lays the foundation for the work presented in latter chapters by discussing the potential of 60 GHz frequency bands for high data rate wireless transfer and the challenges related to 60 GHz IC design.

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Abstract: This chapter lays the foundation for the work presented in latter chapters. The potential of 60 GHz frequency bands for high data rate wireless transfer is discussed and promising applications are enlisted. Furthermore, the challenges related to 60 GHz IC design are presented and the chapter concludes with an outline of the book.

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14 citations

Proceedings Article•DOI•

Techniques for improving CMOS VCO performance

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Chun-Huat Heng¹, Amit Bansal¹, San Jeow Cheng¹•Institutions (1)

National University of Singapore¹

01 Dec 2009

TL;DR: Some of the well known techniques for improving the performance of CMOS tail current bias LC VCO, such as the phase noise and the tuning range are reviewed.

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Abstract: In this paper, we review some of the well known techniques for improving the performance of CMOS tail current bias LC VCO, such as the phase noise and the tuning range. Based on the better understanding on VCO phase noise mechanism and tuning range limitations, this has lead to newly developed techniques such as noise cancellation VCO and resistively tuned variable inductor, which help improving the VCO performance. The former technique achieves FOM of −186dBc/Hz while the latter leads to wide tuning range VCO of 56% suitable for tuner application.

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12 citations

Cites background or methods from "A 1V Dual-Band VCO Using an Integra..."

...From literature, other alternatives of tuning the frequency of LC VCO have also been explored [16-17]....
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...In [16], capacitor array is employed at the secondary coil to vary the secondary coil current and thus the technique will experience similar switched capacitor array limitations....
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Journal Article•DOI•

A 160-GHz Frequency-Translation Phase-Locked Loop With RSSI Assisted Frequency Acquisition

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Wei-Zen Chen¹, Tai-You Lu², Yan-Ting Wang¹, Jhong-Ting Jian, Yi-Hung Yang¹, Kai-Ting Chang¹ - Show less +2 more•Institutions (2)

National Chiao Tung University¹, MediaTek²

29 Jan 2014-IEEE Transactions on Circuits and Systems

TL;DR: A 160-GHz frequency-translation PLL with tuning range from 156.4 GHz to 159.2 GHz is presented, replacing Sub-THz 1/9 prescaler with a 3rd harmonic mixer incorporating a frequency tripler for frequency down conversion.

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Abstract: A 160-GHz frequency-translation PLL with tuning range from 156.4 GHz to 159.2 GHz is presented. Sub-THz 1/9 prescaler is replaced by a 3rd harmonic mixer incorporating a frequency tripler for frequency down conversion. A transformer-based VCO is utilized to alleviate capacitive and resistive load associated with varactor and succeeding buffer stages. Frequency acquisition is assisted by received signal strength indicator (RSSI) for automatic frequency sweeping and fast locking. Fabricated in 65 nm CMOS technology, the chip size is 0.92 ${\rm mm}^{2}$ . The PLL locking time is less than 3 $\mu{\rm s}$ . This chip drains 24 mW from a 1.2 V power supply.

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7 citations

Proceedings Article•DOI•

1.1 to 1.9GHz CMOS VCO for tuner application with resistively tuned variable inductor

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San-Jeow Cheng¹, Yuanjin Zheng, Chun-Huat Heng¹•Institutions (1)

National University of Singapore¹

07 Jun 2009

TL;DR: In this paper, a VCO is fabricated in 0.35µm CMOS technology for tuner application as a proof of concept for a novel method of resistively tuning the inductance of an LC VCO.

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Abstract: A VCO is fabricated in 0.35µm CMOS technology for tuner application as a proof of concept for a novel method of resistively tuning the inductance of an LC VCO. By employing a transformer as inductor, L is varied by changing the secondary coil current using active resistors. This eliminates the need for using multiple inductors to cover the frequency spectrum of 1.1 to 1.9GHz, resulting in large savings in area. Power consumption is comparable to other known transformer based, magnetic tuning inductance methods due to its single powered VCO core implementation. It draws about 6.8mA from a 3V supply. The achievable tuning range of 1.06 to 1.88GHz (56%) and phase noise of −116.1dBc/Hz is adequate for tuner application.

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6 citations

Cites background or methods from "A 1V Dual-Band VCO Using an Integra..."

...Various transformer based variable inductors have been proposed and successfully applied to VCO applications [2]-[3]....
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...In [2], variable capacitor is employed to modify the overall current flowing in the secondary coil, as shown in Fig....
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...Differential transformer might be more suitable for high operating frequency, such as [2-3], where significant area saving can be achieved....
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...L-varying Technique C-tuning (Dual-band) [2] Gm-tuning [3] R-tuning [This Work]...
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...As the operation frequency is at a lower band of 1 to 2GHz compared to [2] and [3], the size of a differential transformer with equivalent primary inductance, similar number of turns and of reasonable Q is only slightly smaller than the two normal transformers employed in this paper....
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References

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Journal Article•DOI•

A 1-V 3.8 - 5.7-GHz wide-band VCO with differentially tuned accumulation MOS varactors for common-mode noise rejection in CMOS SOI technology

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N. Fong, Jean-Olivier Plouchart¹, Noah Zamdmer¹, Duixian Liu¹, Lawrence F. Wagner¹, Calvin Plett², N.G. Tarr² - Show less +3 more•Institutions (2)

IBM¹, Carleton University²

28 Jul 2003-IEEE Transactions on Microwave Theory and Techniques

TL;DR: In this article, a 1-V 3.8 - 5.7 GHz wideband voltage-controlled oscillator (VCO) in a 0.13/spl mu/m silicon-on-insulator (SOI) CMOS process is presented.

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Abstract: In this paper, a 1-V 3.8 - 5.7-GHz wide-band voltage-controlled oscillator (VCO) in a 0.13-/spl mu/m silicon-on-insulator (SOI) CMOS process is presented. This VCO features differentially tuned accumulation MOS varactors that: 1) provide 40% frequency tuning when biased between 0 - 1 V and 2) diminish the adverse effect of high varactor sensitivity through rejection of common-mode noise. This paper shows that, for differential LC VCOs, all low-frequency noise such as flicker noise can be considered to be common-mode noise, and differentially tuned varactors can be used to suppress common-mode noise from being upconverted to the carrier frequency. The noise rejection mechanism is explained, and the technological advantages of SOI over bulk CMOS in this regard is discussed. At 1-MHz offset, the measured phase noise is -121.67 dBc/Hz at 3.8 GHz, and -111.67 dBc/Hz at 5.7 GHz. The power dissipation is between 2.3 - 2.7-mW, depending on the center frequency, and the buffered output power is -9 dBm. Due to the noise rejection, the VCO is able to operate at very low voltage and low power. At a supply voltage of 0.75 V, the VCO only dissipates 0.8 mW at 5.5 GHz.

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99 citations

Proceedings Article•DOI•

A new approach to fully integrated CMOS LC-oscillators with a very large tuning range

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Frank Herzel, H. Erzgraber, N. Ilkov

21 May 2000

TL;DR: A new approach to fully integrated CMOS LC-oscillators with very large tuning range with potential applications including wideband RF systems and clock generation in microprocessors is described.

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Abstract: We describe a new approach to fully integrated CMOS LC-oscillators with very large tuning range. An experimental oscillator is tunable from 1.34 GHz to 2.14 GHz. The standard deviation of the oscillation period due to thermal device noise is below 250 ppm. Potential applications include wideband RF systems and clock generation in microprocessors.

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48 citations

"A 1V Dual-Band VCO Using an Integra..." refers background in this paper

...Switched resonators [1][2] employ multiple inductors and switches, which would require large chip area for high Q and thus also have very limited oscillation frequency....
[...]
...INTRODUCTION Existing solutions for frequency tuning in RF VCOs include varactors in simple LC tanks, active inductors, and switched resonators [1][2]....
[...]

Proceedings Article•DOI•

Analysis on resonator coupling and its application to CMOS quadrature VCO at 8 GHz

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Donghyun Baek¹, Taek-Sang Song¹, Sangsoo Ko¹, Euisik Yoon¹, Songcheol Hong¹ - Show less +1 more•Institutions (1)

KAIST¹

08 Jun 2003

TL;DR: In this article, a low phase noise CMOS quadrature VCO is presented, where two VCOs are linked to generate I-Q signals by the direct current modulation method.

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Abstract: A low phase noise CMOS quadrature VCO is presented. A transformer resonator coupling is analyzed. It is found that the coupled resonator has high frequency selectivity. The Q factor of a coupled resonator is (1+k) times higher than a single LC resonator. This enhancement leads to low phase noise and low power consumption of a VCO. The VCO is implemented using 0.18 /spl mu/m CMOS technology. Two VCOs are linked to generate I-Q signals by the direct current modulation method. The VCO shows low phase noise performances of -110 and -117 dBc/Hz at the offset frequencies of 600 kHz and 1 MHz respectively. The oscillation frequency is 8 GHz. The tuning range of 250 MHz is achieved with a control voltage from 0 to 1 V. The VCO draws 8 mA in core circuits with 3 V supply.

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34 citations

"A 1V Dual-Band VCO Using an Integra..." refers background in this paper

...In addition, with the coupling between the 2 coils of the transformer, compared to a simple inductor, the quality factor of the variable inductor is improved by (1+k) times, and the parallel impedance of the variable inductor is much larger [3]....
[...]

Proceedings Article•DOI•

A 1-V low phase noise multi-band CMOS voltage controlled oscillator with switched inductors and capacitors

[...]

Z. Li¹•Institutions (1)

University of Florida¹

06 Jun 2004

TL;DR: In this paper, a low voltage multi-band all PMOS VCO was fabricated in a 0.18/spl mu/m CMOS process using a combination of inductor and capacitor switching, four band operation was realized in a single VCO.

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Abstract: A low voltage multi-band all PMOS VCO was fabricated in a 0.18-/spl mu/m CMOS process. By using a combination of inductor and capacitor switching, four band (2.4, 2.5, 4.7 and 5 GHz) operation was realized in a single VCO. The VCO with 1-V power supply has phase noises at 1-MHz offset of -126 dBc/Hz at 4.7 GHz and -134 dBc/Hz at 2.4 GHz, respectively. It has the lowest phase noise among the CMOS VCOs presented to date in all the bands. The VCO consumes 4.6 mW for 2.4 and 2.5 GHz, and 6 mW for 4.7 and 5 GHz operations, respectively.

...read moreread less

30 citations

"A 1V Dual-Band VCO Using an Integra..." refers background in this paper

...Switched resonators [1][2] employ multiple inductors and switches, which would require large chip area for high Q and thus also have very limited oscillation frequency....
[...]
...INTRODUCTION Existing solutions for frequency tuning in RF VCOs include varactors in simple LC tanks, active inductors, and switched resonators [1][2]....
[...]