Journal ArticleDOI
A 27.3% efficient Ga0.5In0.5P/GaAs tandem solar cell
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TLDR
In this paper, a two-terminal, monolithic cascade solar cell with an efficiency of 27.3% was reported, which consists of a Ga 0.5In0.5P homojunction and a GaAs tunnel diode interconnect.Abstract:
A two‐terminal, monolithic cascade solar cell with an efficiency of 27.3% is reported. The device structure consists of a Ga0.5In0.5P homojunction grown epitaxially upon a GaAs homojunction, with a GaAs tunnel diode interconnect. The tandem combination of these two materials is lattice matched, and has a theoretical efficiency of 34%. The device was grown by metalorganic chemical vapor deposition at 700 °C, using trimethylgallium, trimethylindium, arsine, and phosphine as sources. The minority‐carrier transport properties of the Ga0.5In0.5P are shown to be relatively insensitive to variations of the growth temperature and phosphine overpressure. Other factors that affect the efficiency of the device are presented and discussed.read more
Citations
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Physical Chemistry of Semiconductor−Liquid Interfaces
Arthur J. Nozik,Rüdiger Memming +1 more
TL;DR: A review of the basic physicochemical principles of semiconductor−liquid interfaces, including their historical development, and describe the major technological applications that are based on these scientific principles can be found in this paper.
Journal ArticleDOI
Current-matched triple-junction solar cell reaching 41.1% conversion efficiency under concentrated sunlight
Wolfgang Guter,J. Schöne,Simon P. Philipps,Marc Steiner,Gerald Siefer,A. Wekkeli,Elke Welser,E. Oliva,Andreas W. Bett,Frank Dimroth +9 more
TL;DR: In this article, a metamorphic Ga0.35In0.17As/Ge triple-junction solar cell is shown to provide current-matching of all three subcells and thus composes a device structure with virtually ideal band gap combination.
Journal ArticleDOI
III–V multijunction solar cells for concentrating photovoltaics
H.L. Cotal,Christopher M. Fetzer,Joseph Boisvert,Geoffrey S. Kinsey,Richard R. King,Peter Hebert,Hojun Yoon,Nasser H. Karam +7 more
TL;DR: In this article, the epitaxial growth of multijunction cells is considered to maximize light absorption and minimize I2R losses in the gridlines and the semiconductor sheet.
Journal ArticleDOI
High-efficiency GaInP∕GaAs∕InGaAs triple-junction solar cells grown inverted with a metamorphic bottom junction
John F. Geisz,Sarah Kurtz,Mark Wanlass,J.S. Ward,Anna Duda,Daniel J. Friedman,J. M. Olson,William E. McMahon,Tom Moriarty,J. Kiehl +9 more
TL;DR: In this paper, a Ge-free III-V semiconductor triple-junction solar cell was presented, which achieved 33.8, 30.6, and 38.9% efficiencies under the standard 1sun global spectrum, space spectrum, and concentrated direct spectrum at 81suns, respectively.
Journal ArticleDOI
Multi-junction III-V solar cells: current status and future potential
TL;DR: In this paper, a 3-junction InGaP/InGaAs/Ge concentrator solar cell with an efficiency of 37.4% (AM1.5G, 200-suns) has been fabricated.
References
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Journal ArticleDOI
Ultralow recombination velocity at Ga0.5In0.5P/GaAs heterointerfaces
TL;DR: In this article, the authors examined the optoelectronic properties of Ga0.5In 0.5P/GaAs double heterostructures grown by organometallic chemical vapor deposition.
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Growth of high-quality inGaAIP epilayers by MOCVD using methyl metalorganics and their application to visible semiconductors lasers
TL;DR: In this article, the effects of growth procedure and conditions (growth temperature, V/III ratio, etc.) were investigated by low-pressure MOCVD technique, using trimethyl metalorganics.
Journal ArticleDOI
27.6% efficiency (1 sun, air mass 1.5) monolithic Al0.37Ga0.63As/GaAs two‐junction cascade solar cell with prismatic cover glass
TL;DR: In this article, a two-terminal, monolithic two-junction cascade solar cell consisting of an Al0.37Ga0.63As (Eg=1.93 eV) upper cell and a GaAs lower cell was constructed using a metal-interconnect contact fabricated during postgrowth processing.
Journal ArticleDOI
In situ characterization of MOCVD growth processes by light scattering techniques
J.M. Olson,A. Kibbler +1 more
TL;DR: Quasielectric light scattering (QLS) has been used extensively to characterize surface defects, to count dust particles, and to probe the solid-melt interface during the growth of ice and salol crystals as mentioned in this paper.
Journal ArticleDOI
Electroreflectance and photoreflectance of GaInP
TL;DR: In this article, the spectra of GaInP films lattice-matched to GaAs are reported and the band structure is shown to vary even at a fixed composition because of ordering of the alloy.