A 3-D Analytical Physically Based Model for the Subthreshold Swing in Undoped Trigate FinFETs
Citations
76 citations
Cites background from "A 3-D Analytical Physically Based M..."
...Short-channel effects [32], [33] and quantum mechanical effects [34], [35] have been modeled, so have body doping [36], [37] and corner effects [38]....
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67 citations
Cites methods from "A 3-D Analytical Physically Based M..."
...Recently, the analytical solution of the 3-D Poisson’s equation in undoped FinFETs resulted in a rather complicated semianalytical expression for the 3-D electrostatic potential, since the 1-D potential distribution along the silicon thickness requires numerical calculation [22]....
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...Thus, instead of solving the 3-D Poisson’s equation, which leads to a semianalytical expression for the potential distribution in TG MOSFETs [22], the potential Φ(x, y, z) can be accurately described with a simple analytical expression using a dimension-based approximation; the potential Φ(x, y, z) can be considered as the perimeter-weighted sum of the physically based potential distributions Φasym(x, y) and Φsym(y, z) due to the asymmetric and symmetric DG MOSFETs, respectively....
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51 citations
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Cites background or methods from "A 3-D Analytical Physically Based M..."
...2006535 the potential in triple-gate FETs, whose overview can be found in [4]....
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...On the other hand, in [4] and [5], the influence of a back-gate bias is taken into account....
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...However, the solution in [4] takes into account a mobile-charge term, making the approach interesting for the near-threshold regime of undoped devices....
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..., if the channel thickness is less than the channel length, this series can be approximated by its first terms [2], [4]–[6]....
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...The approaches presented in [2], [5], and [6] solve the 3-D potential in a volume, including the channel region and the gate oxide, whereas in [4], the potential is solved only in the silicon channel while applying boundary conditions at the silicon-to-oxide interface derived from 1-D analysis....
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References
1,668 citations
"A 3-D Analytical Physically Based M..." refers background in this paper
...So far, very little work has been done on the analytical modeling of FinFET devices, although there have been some works studying the FinFET performance through numerical simulation [6], or studying the device physics from experimental data [8]–[18]....
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729 citations
"A 3-D Analytical Physically Based M..." refers background in this paper
...Due to this relatively even spreading of free electrons, known as volume inversion [22], the overall conduction yc is not confined to the channel center, and the effective conducting path should be somewhere in-between the surfaces and the channel center....
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611 citations
550 citations
"A 3-D Analytical Physically Based M..." refers methods in this paper
...P-channel FinFETs were subsequently demonstrated using a similar fabrication process and showed excellent characteristics [5]....
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297 citations
"A 3-D Analytical Physically Based M..." refers background in this paper
...[19] presented 3-D subthreshold swing and threshold-voltage rolloff models but are only valid for doped FinFET devices, i....
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