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A Chaotic Potential of Charged Dislocations in Group III-Nitride Heterojunctions
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In this paper, the structure of the chaotic potential caused by the electrostatic field of charged dislocations in group III-nitride heterojunctions is investigated, taking into account the spatial dispersion of the dielectric response of a two-dimensional electron gas.Abstract:
The structure of the chaotic potential caused by the electrostatic field of charged dislocations in group III-nitride heterojunctions is investigated. Taking into account the spatial dispersion of the dielectric response of a two-dimensional electron gas, the amplitude and scale of the chaotic potential in the junction plane are determined. It is shown that the parameters of the chaotic potential depend on the density of surface states and the concentration of dislocations.read more
Citations
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Broadband intermodal fiber interferometer for sensor application: fundamentals and simulator.
TL;DR: In this article , an intermodal fiber interferometer using the light from an incoherent broadband source has been considered analytically and implemented as a laboratory device, where the use of an optical spectrum analyzer and correlation functions approach in extracting the utility signal made it possible to achieve a linear response to the measured external perturbation and effective fading mitigation.
References
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Electronic properties of two-dimensional systems
TL;DR: In this paper, the electronic properties of inversion and accumulation layers at semiconductor-insulator interfaces and of other systems that exhibit two-dimensional or quasi-two-dimensional behavior, such as electrons in semiconductor heterojunctions and superlattices and on liquid helium, are reviewed.
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Scattering of electrons at threading dislocations in GaN
TL;DR: In this paper, a model to explain the observed low transverse mobility in GaN by scattering of electrons at charged dislocation lines is proposed and the statistics of trap occupancy at different doping levels are investigated.
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Electron mobilities in gallium, indium, and aluminum nitrides
TL;DR: In this paper, the authors calculated the electron mobility in GaN and InN as a function of temperature for carrier concentrations of 1016, 1017, and 1018 cm−3 with compensation ratio as a parameter.
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Dislocation scattering in a two-dimensional electron gas
TL;DR: In this article, a theory of scattering by charged dislocation lines in a two-dimensional electron gas (2DEG) is developed, which is directed towards understanding transport in AlGaN/GaN high-electron-mobility transistors which have a large number of line dislocations piercing through the 2DEG.
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Electron scattering in AlGaN/GaN heterostructures with a two-dimensional electron gas
TL;DR: In this paper, the temperature and concentration dependences of electron mobility in AlGaN/GaN hetero-structures are studied, and it is established that scattering at charged centers is dominant for samples with low mobility (lower than 1000 cm2/(V s) right up to room temperature.