A Charge-Based Capacitance Model for Double-Gate Tunnel FETs With Closed-Form Solution
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Cites background from "A Charge-Based Capacitance Model fo..."
...According to our previous work, the channel carrier density can be expressed as ND exp(− CD/Vt ), where Vt is the thermal voltage [20]....
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Cites background from "A Charge-Based Capacitance Model fo..."
...TFETs have been intensively investigated in recent years and are expected to be seen in semiconductor products after 2022 [5], [6]....
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References
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"A Charge-Based Capacitance Model fo..." refers background in this paper
...It has been reported that TFETs working on the band-to-band tunneling mechanism are not limited by the 60 mV/decade subthreshold swing of conventional MOSFETs and therefore, can obtain ultrahigh ON/OFF current under reduced supply voltage Vdd [1]–[4]....
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"A Charge-Based Capacitance Model fo..." refers background in this paper
...For simplicity, abrupt doping profiles are adopted and quantum confinement effect is ignored, which is significant and should be considered for TSi ≤ 3 nm [26]....
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