A comparative study of phase modulation in InGaAsP/InP and GaAs/AlGaAs based p-i-n and p-p-n-n structures

doi:10.1109/50.166787

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A comparative study of phase modulation in InGaAsP/InP and GaAs/AlGaAs based p-i-n and p-p-n-n structures

Journal Article•DOI•

A comparative study of phase modulation in InGaAsP/InP and GaAs/AlGaAs based p-i-n and p-p-n-n structures

A. Bandyopadhyay¹, P.K. Basu¹•Institutions (1)

University of Calcutta¹

01 Oct 1992-Journal of Lightwave Technology (IEEE)-Vol. 10, Iss: 10, pp 1438-1442

TL;DR: In this paper, a theoretical study of phase modulation in InGaAsP/InP and GaAs/AlGaAs double heterostructure waveguides in the p-i-n and p-p-n-n configurations at wavelengths of 1.3 and 1.55 mu m is reported.

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Abstract: A theoretical study of the phase modulation in InGaAsP/InP and GaAs/AlGaAs double heterostructure waveguides in the p-i-n and p-p-n-n configurations at wavelengths of 1.3 and 1.55 mu m. is reported. The carrier-induced effects (plasma, band filling, and many body) and the field-induced effects (linear electrooptic and electro-refractive) are considered to calculate the change in the refractive index. Both structures made of InGaAsP/InP show higher modulation efficiency than the corresponding structures made of GaAs/AlGaAs in almost all the cases considered due to a larger index change in InGaAsP as its bandgap wavelength is closer to both 1.3 and 1.55 mu m. >

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Dissertation•DOI•

Advanced indium-phosphide waveguide Mach-Zehnder interferometer all-optical switches and wavelength converters

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Juerg Leuthold

01 Jan 1998

TL;DR: In this paper, three possible concepts for very compact 1.30/1.55 μm WDM based on multimode interference (MMI) are discussed and first implementations are presented.

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Abstract: Three possible concepts for very compact 1.30/1.55 μm Wavelength Division Multiplexers (WDM) based on multimode interference (MMI) are discussed and first implementations are presented. The best crosstalks and polarisation insensitivity are attained with a new concept based on 1x2-MMIs. The WDM principle is general enough to be used for multiplexing two signals of other wavelengths.

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23 citations

Journal Article•DOI•

Double-heterostructure ridge-waveguide GaAs/AlGaAs phase modulator for 780 nm lasers

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Bassem Arar¹, Hans Wenzel¹, R. Güther¹, Olaf Brox¹, Andre Maaßdorf¹, Andreas Wicht¹, G. Erbert¹, Markus Weyers¹, Günther Tränkle¹, Harendra N. J. Fernando², Achim Peters³ - Show less +7 more•Institutions (3)

Ferdinand-Braun-Institut¹, Leibniz Institute for Astrophysics Potsdam², Humboldt University of Berlin³

01 Jul 2014-Applied Physics B

TL;DR: In this article, a GaAs/AlGaAs-based phase modulator for an operating wavelength of 780nm was presented for the first time, based on a P-p-i-n-N double heterostructure and features a waveguide with a vertical W-shaped index profile optimized for low propagation losses.

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Abstract: Results of a GaAs/AlGaAs-based phase modulator designed for an operating wavelength of 780 nm are presented for the first time. The modulator is based on a P-p-i-n-N double heterostructure and features a waveguide with a vertical W-shaped index profile optimized for low propagation losses and a ridge waveguide for lateral index-guiding. A phase modulation efficiency of 12°/V mm is reported. The propagation losses are determined to about 1.4 dB/cm.

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7 citations

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Journal Article•DOI•

Carrier-induced change in refractive index of InP, GaAs and InGaAsP

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Brian R. Bennett, Richard A. Soref, J.A. del Alamo¹•Institutions (1)

Massachusetts Institute of Technology¹

01 Jan 1990-IEEE Journal of Quantum Electronics

TL;DR: In this article, the change in refractive index Delta n produced by injection of free carriers in InP, GaAs, and InGaAsP was theoretically estimated and the results were in reasonably good agreement with the limited experimental data available.

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Abstract: The change in refractive index Delta n produced by injection of free carriers in InP, GaAs, and InGaAsP is theoretically estimated. Bandfilling (Burstein-Moss effect), bandgap shrinkage, and free-carrier absorption (plasma effect) are included. Carrier concentrations of 10/sup 16//cm/sup 3/ to 10/sup 19//cm/sup 3/ and photon energies of 0.8 to 2.0 eV are considered. Predictions for Delta n are in reasonably good agreement with the limited experimental data available. Refractive index changes as large as 10/sup -2/ are predicted for carrier concentrations of 10/sup 8//cm/sup 3/ suggested that low-loss optical phase modulators and switches using carrier injection are feasible in these materials. >

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974 citations

"A comparative study of phase modula..." refers background or methods in this paper

...In our calculation, 'we have used the semiempirical model proposed by Bennett et al. [ 13 ] for the dependence of AE, on carrier concentrations....
[...]
...~P~.~ are given in Table I. The expressions for the change in absorption constant Aa(N,P,E) are due to [ 13 ] 1) The band-filling effect...
[...]
...The absorption coefficient near the band gap is expressed as [ 13 ]...
[...]
...A rough estimate for In0.s2Ga~.~sAso.~Po.6 gives a value of 0.02 and 0.05 dB for insertion loss at doping levels of 2 x 10l6 and 1 x lOls ~m-~, respectively, for a length giving a phase change of 7r at 1.3 pm [ 13 ]....
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Journal Article•DOI•

InGaAsP/InP optical switches using carrier induced refractive index change

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K. Ishida, H. Nakamura, H. Matsumura, T. Kadoi, H. Inoue - Show less +1 more

19 Jan 1987-Applied Physics Letters

TL;DR: InGaAsP/InP optical switches have been fabricated which use a carrier induced refractive index change as discussed by the authors, achieving power isolation of 20.5 dB in a 1mm-long device in multimode operation.

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Abstract: InGaAsP/InP optical switches have been fabricated which use a carrier induced refractive index change. Switching has been achieved with a power isolation of 20.5 dB in a 1‐mm‐long device in multimode operation. This is a promising new step toward making optical integrated circuits.

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119 citations

Journal Article•DOI•

Analysis of depletion edge translation lightwave modulators

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J.G. Mendoza-Alvarez¹, Larry A. Coldren¹, Arne Alping¹, R. H. Yan¹, T. Hausken¹, K. W. Lee¹, K. Pedrotti² - Show less +3 more•Institutions (2)

University of California, Santa Barbara¹, Rockwell International²

01 Jun 1988-Journal of Lightwave Technology

TL;DR: In this paper, a complete analysis of waveguide phase modulators based on the depletion-edge-translation concept is presented, where the phenomena taking place inside the depletion region which contribute to changing the refractive index there are studied.

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Abstract: Presents a complete analysis of waveguide phase modulators based on the depletion-edge-translation concept. The phenomena taking place inside the depletion region which contribute to changing the refractive index there are studied. It is shown that the behavior of these modulators can be understood in terms of two electric field-related and two carrier-related effects: linear electrooptic, electrorefractive, plasma, and band filling. The sum of the refractive index variations produced by each one of these effects, taking into account the waveguide geometry, accounts quantitatively for the experimental phase shifts measured in the devices. No fitting parameters are used and a very good agreement between theory and experiment is obtained. Based on this theory, an analysis of the device is made in terms of the optimum values for the doping in the waveguide, and also in terms of the wavelength dependence of the device phase modulation properties. >

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113 citations

"A comparative study of phase modula..." refers background or methods in this paper

...Fig. 3. Modulation efficiency in rad/(V . mm) as function of the depletion width W at zero bias, at 1.3 pm for the P-i-N phase modulator structure shown in Fig. 1. Curve FR is for the TE mode in GaAs/&.4Gao.6 As P-i-N phase modulator calculated using De and Dh values given by Faist and Reinhart [3]. index change becomes [ 5 ]....
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...As mentioned earlier, both the P-i-N structure (Fig. 1) used by Faist and Reinhart [3], [4] and the P-p-n-N structure employed by Mendoza-Alvarez et al. [ 5 ] are examined in the present work....
[...]
...The P-p-n-N DH is shown in Fig. 2. The thickness of the active layer is 0.25 pm and the doping levels of various layers shown in the figure are taken to be the same as in [ 5 ]....
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...change instead of using the parabolic expression for the index change employed in [3], [ 5 ]....
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...In connection with the GaAs-based phase modulators, Faist and Reinhart [3], [4] considered a P-AlGaAs/i-GaAs/N-AlGaAs DH, while Mendoza-Alvarez et al. [ 5 ] studied a P-pn-N structure in which the higher-(lower-) case symbols refer to AlGaAs(GaAs)....
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Journal Article•DOI•

Electrorefraction in GaAs and InGaAsP and its application to phase modulators

[...]

Arne Alping, Larry A. Coldren

01 Apr 1987-Journal of Applied Physics

TL;DR: In this article, a Kramers-Kronig analysis is used to calculate the refractive index change induced by changes in the shape of the fundamental absorption edge when a strong electric field is applied to a semiconductor.

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Abstract: A Kramers–Kronig analysis is used to calculate the refractive index change induced by changes in the shape of the fundamental absorption edge when a strong electric field is applied to a semiconductor Calculations are made for GaAs and InGaAsP over the 09 to 155 μm wavelength range For GaAs, we find that the electrorefraction is Δn=79×10−4 at λ=106 μm when the electric field is 400 kV/cm, but decreases to Δn=13×10−4 at λ=155 μm for the same electric field strength For wavelengths far below the band gap, the refractive index change has a quadratic dependence on the applied electric field The electrorefraction effect will have important applications for optical waveguide phase modulators

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64 citations

Journal Article•DOI•

Highly efficient waveguide phase modulator for integrated optoelectronics

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Arne Alping, X. S. Wu, T. Hausken, Larry A. Coldren

12 May 1986-Applied Physics Letters

TL;DR: The GaAs/AlGaAs ridge waveguide phase modulators were investigated in this article, where the authors showed that the speed of the phase modulator is only limited by the RC time constant.

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Abstract: The characteristics of novel reverse‐biased waveguide phase modulators are reported. These devices, which use the translation of a depletion edge, have provided the highest efficiency figure of merit (56 °/Vmm) ever reported for a reverse‐biased device. Furthermore, the speed of the device is only limited by the RC time constant. The investigated devices were GaAs/AlGaAs ridge waveguide modulators, a geometry which is well suited for integrated optoelectronics.

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62 citations