What contributions have the authors mentioned in the paper "A comparison of grain nucleation and grain growth during crystallization of hwcvd and pecvd a-si:h films" ?

Even though the bonded hydrogen evolves very early from the film during annealing, the authors suggest that the initial spatial distribution of hydrogen plays a critical role in the crystallization kinetics, and they propose a preliminary model to describe this process.

(Open Access) A comparison of grain nucleation and grain growth during crystallization of HWCVD and PECVD a-Si:H films (2008) | A. H. Mahan

Journal ArticleDOI

Deposition of device quality, low H content amorphous silicon

A.H. Mahan, +4 more

- 01 May 1991 -

Journal of Applied Physics

TL;DR: In this paper, it was shown that hydrogenated amorphous silicon containing as little as 1/10 the bonded H observed in device-quality glow discharge films have been deposited by thermal decomposition of silane on a heated filament.

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Journal ArticleDOI

Structural information from the Raman spectrum of amorphous silicon.

David Beeman, +2 more

- 15 Jul 1985 -

Physical Review B

TL;DR: It is shown that the width of the ``optic peak'' increases roughly linearly with the rms bond-angle distortion of the network, consistent with model-building experience which shows that it is impossible to construct fully bonded amorphous networks with \ensuremath{\Delta}${\ensureMath{\theta}}_{b}$.

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Journal ArticleDOI

Crystal grain nucleation in amorphous silicon

Corrado Spinella, +2 more

- 04 Nov 1998 -

Journal of Applied Physics

TL;DR: In this paper, the morphological evolution of the amorphous towards the polycrystalline phase is investigated by transmission electron microscopy and it is interpreted in terms of a physical model containing few free parameters related to the thermodynamical properties of ammorphous silicon and to the kinetical mechanisms of crystal grain growth.

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Journal ArticleDOI

Recrystallization of amorphized polycrystalline silicon films on SiO2: Temperature dependence of the crystallization parameters

R. B. Iverson, +1 more

- 01 Sep 1987 -

Journal of Applied Physics

TL;DR: In this paper, a theoretical and experimental study of the recrystallization behavior of polycrystalline silicon films amorphized by self-implantation was carried out and the crystallization behavior was found to be similar to the crystallisation behavior of films deposited in the amorphous state, however, a transient time was observed, during which negligible crystallization occurs.

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Journal ArticleDOI

Multiple-quantum NMR study of clustering in hydrogenated amorphous silicon.

Jean Baum, +4 more

- 31 Mar 1986 -

Physical Review Letters

TL;DR: Using the fact that multiple-quantum excitation is limited by the size of the dipolar-coupled spin system, it is shown that the predominant bonding environment for hydrogen is a cluster of four to seven atoms.

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A comparison of grain nucleation and grain growth during crystallization of HWCVD and PECVD a-Si:H films

Figures

Citations

Kinetics of the laser-induced solid phase crystallization of amorphous silicon Time-resolved Raman spectroscopy and computer simulations

An alternative method to determine the steady state nucleation rate in thermally annealed HWCVD a-Si:H films

The use of optical microscopy to examine crystallite nucleation and growth in thermally annealed plasma enhanced chemical vapor deposition and hot wire chemical vapor deposition a-Si:H films

Can the crystallization rate be independent from the crystallization enthalpy? The case of amorphous silicon

Nickel-induced crystallization of amorphous silicon

References

Deposition of device quality, low H content amorphous silicon

Structural information from the Raman spectrum of amorphous silicon.

Crystal grain nucleation in amorphous silicon

Recrystallization of amorphized polycrystalline silicon films on SiO2: Temperature dependence of the crystallization parameters

Multiple-quantum NMR study of clustering in hydrogenated amorphous silicon.

Related Papers (5)

Recrystallization of amorphized polycrystalline silicon films on SiO2: Temperature dependence of the crystallization parameters

Identification of Nucleation Center Sites in Thermally Annealed Hydrogenated Amorphous Silicon

Crystal grain nucleation in amorphous silicon

Effect of substrate temperature on recrystallization of plasma chemical vapor deposition amorphous silicon films

Monitoring of crystallization and the effect of the deposition rate, hydrogen content and annealing process on the crystallization of hot wire chemical vapor deposited hydrogenated amorphous silicon (a-Si:H) films

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Q1. What contributions have the authors mentioned in the paper "A comparison of grain nucleation and grain growth during crystallization of hwcvd and pecvd a-si:h films" ?