A comparison of grain nucleation and grain growth during crystallization of HWCVD and PECVD a-Si:H films

TLDR: In this article, the authors compare the crystallization kinetics of HWCVD and PECVD a-Si:H films, containing different initial film hydrogen contents (CH), by annealing at 600 °C.

About: This article is published in Thin Solid Films.The article was published on 2008-01-15 and is currently open access. It has received 25 citations till now. The article focuses on the topics: Crystallization & Nucleation.

Figures

Table 3 H distributions in as grown a-Si:H

Table 1 Measured crystallization parameters for HWCVD and PECVD films annealed at 600 °C

Fig. 1. TEM images taken in the early crystalline regimes of high CH HWCVD film (a) and (similar) high CH PECVD film (b). The crystalline volume fractions are roughly similar. The 600 °C anneal times are included in the figures.

Frequently asked questions

Q1. What contributions have the authors mentioned in the paper "A comparison of grain nucleation and grain growth during crystallization of hwcvd and pecvd a-si:h films" ?

Even though the bonded hydrogen evolves very early from the film during annealing, the authors suggest that the initial spatial distribution of hydrogen plays a critical role in the crystallization kinetics, and they propose a preliminary model to describe this process.