A Comprehensive Computational Modeling Approach for AlGaN/GaN HEMTs
Citations
54 citations
Cites background or methods from "A Comprehensive Computational Model..."
...These surface traps are taken to compensate hole density on surface [14] and the concentration value is selected so as to achieve the required nS and the gate leakage [14]....
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...This hole density is attributed to polarization charges present at the GaN/AlN interface and is discussed in detail in our earlier work [14]....
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...An unintentional (n-type) doping of 1×1015 cm−3 is considered in the GaN buffer [14]....
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...reported in [14]....
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...Modeling aspects related to channel transport, mobility, and sheet charge density (nS) were calibrated with experimental data according to framework described in our earlier work [14]....
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35 citations
Cites methods from "A Comprehensive Computational Model..."
...Electron mobility, contact resistance, surface trap charges, and so on were calibrated with experimental data, which has been elaborated in our earlier work [23]....
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...A well-calibrated Technology CAD setup, as described and used in our earlier works [23]–[25], has been used here....
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31 citations
Cites background or methods from "A Comprehensive Computational Model..."
...electron density, mobility and related transport parameters are calibrated with the experimental data as per the framework discussed in our earlier work [23]....
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...the one described in our earlier work [23], and is discussed in...
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30 citations
References
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"A Comprehensive Computational Model..." refers background in this paper
...[24] suggested that polarization charges alone are not sufficient to explain 2DEG profile and proposed that sur-...
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886 citations
Additional excerpts
...in [37] and Farahmand et al....
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752 citations
"A Comprehensive Computational Model..." refers background in this paper
...Mitigation of RF dispersion [25], [26], drain and gate lag effects...
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