A Comprehensive Computational Modeling Approach for AlGaN/GaN HEMTs
Citations
10 citations
Cites methods from "A Comprehensive Computational Model..."
...To validate this argument, TCAD simulations were performed using setup explain in our earlier works [16]–[18]....
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10 citations
10 citations
Cites background or methods from "A Comprehensive Computational Model..."
...Source/drain Ohmic contacts are modeled as Schottky contact with lower work function and high n-type doping at the contact/GaN interface [18]....
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...The computational framework used in this work is adopted from our earlier works in [9], [10], and [18] and is discussed in...
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9 citations
9 citations
Cites methods from "A Comprehensive Computational Model..."
...To understand the underlying physics, diode structure was simulated using the well-calibrated TCAD setup explained in our earlier works [16]....
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References
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"A Comprehensive Computational Model..." refers background in this paper
...[24] suggested that polarization charges alone are not sufficient to explain 2DEG profile and proposed that sur-...
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886 citations
Additional excerpts
...in [37] and Farahmand et al....
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752 citations
"A Comprehensive Computational Model..." refers background in this paper
...Mitigation of RF dispersion [25], [26], drain and gate lag effects...
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