Journal ArticleDOI
A Comprehensive Computational Modeling Approach for AlGaN/GaN HEMTs
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TLDR
In this paper, the impact of surface and bulk traps on two-dimensional electron gas, device characteristics, and gate leakage is accounted for, and a new approach to accurately model the forward gate leakage in Schottky gate devices is proposed.Abstract:
This paper for the first time presents a comprehensive computational modeling approach for AlGaN/GaN high electron mobility transistors. Impact of the polarization charge at different material interfaces on the energy band profile as well as parasitic charge across the epitaxial stack is modeled and studied. Furthermore, impact of surface and bulk traps on two-dimensional electron gas, device characteristics, and gate leakage is accounted in this paper. For the first time, surface states modeled as donor type traps were correlated with gate leakage. Moreover, a new approach to accurately model the forward gate leakage in Schottky gate devices is proposed. Finally, impact of lattice and carrier heating is studied, while highlighting the relevance of carrier heating, lattice heating, and bulk traps over the device characteristics. In addition to this, modeling strategy for other critical aspects like parasitic charges, quantum effects, S/D Schottky contacts, and high field effects is presented.read more
Citations
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Journal ArticleDOI
Physical Insights Into the Impact of Surface Traps on Breakdown Characteristics of AlGaN/GaN HEMTs—Part I
TL;DR: In this article, the impact of surface traps on the breakdown characteristics of AlGaN/GaN HEMT devices is revealed using detailed TCAD computations and supporting experiments.
Journal ArticleDOI
Computational Modelling-Based Device Design for Improved mmWave Performance and Linearity of GaN HEMTs
Ankit Soni,Mayank Shrivastava +1 more
TL;DR: In this article, a comprehensive TCAD-based design approach for mmWave (mmW) GaN HEMTs is presented, where unique trade-offs between epi-layer design and HEMT's mmW performance are discussed.
Journal ArticleDOI
ESD Behavior of AlGaN/GaN Schottky Diodes
TL;DR: In this article, the performance of Ni/Au-based AlGaN/GaN Schottky diodes under ESD conditions was investigated and the transition from soft-to-hard failure was found to depend on the presence of traps and diode design.
Journal ArticleDOI
Part I: Physical Insights Into Dynamic R ON Behavior and a Unique Time-Dependent Critical Stress Voltage in AlGaN/GaN HEMTs
TL;DR: In this paper, the authors reported a unique drain-to-source critical stress voltage above which the dynamic performance of AlGaN/GaN HEMTs is significantly deteriorated.
References
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Journal ArticleDOI
Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
Oliver Ambacher,Joseph A. Smart,James R. Shealy,Nils Weimann,K. Chu,M. J. Murphy,William J. Schaff,L.F. Eastman,Roman Dimitrov,L. Wittmer,Martin Stutzmann,W. Rieger,J. Hilsenbeck +12 more
TL;DR: In this article, the authors investigated the role of spontaneous and piezoelectric polarization on the carrier confinement at GaN/AlGaN and AlGaN/GaN interfaces.
Journal ArticleDOI
Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures
Oliver Ambacher,B. E. Foutz,Joseph A. Smart,James R. Shealy,Nils Weimann,K. Chu,M. J. Murphy,A. J. Sierakowski,William J. Schaff,L.F. Eastman,Roman Dimitrov,A. Mitchell,Martin Stutzmann +12 more
TL;DR: In this paper, a combination of high resolution x-ray diffraction, atomic force microscopy, Hall effect, and capacitance-voltage profiling measurements is used to calculate the polarization induced sheet charge bound at the AlGaN/GaN interfaces.
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Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors
TL;DR: In this paper, the origin of the two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructure field effect transistors is examined theoretically and experimentally.
Journal ArticleDOI
Electron and hole mobilities in silicon as a function of concentration and temperature
TL;DR: In this paper, an analytical expression for the electron and hole mobility in silicon based on both experimental data and modified Brooks-Herring theory of mobility was derived, which allows one to obtain electron and holes mobility as a function of concentration up to \sim 10^{20} cm-3 in an extended and continuous temperature range (250-500 K) within ± 13 percent of the reported experimental values.
Journal ArticleDOI
The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs
TL;DR: In this paper, the authors reported the highest reported microwave power density for undoped sapphire substrated AlGaN/GaN HEMT's on the same wafer.