Journal ArticleDOI
A Comprehensive Computational Modeling Approach for AlGaN/GaN HEMTs
Reads0
Chats0
TLDR
In this paper, the impact of surface and bulk traps on two-dimensional electron gas, device characteristics, and gate leakage is accounted for, and a new approach to accurately model the forward gate leakage in Schottky gate devices is proposed.Abstract:
This paper for the first time presents a comprehensive computational modeling approach for AlGaN/GaN high electron mobility transistors. Impact of the polarization charge at different material interfaces on the energy band profile as well as parasitic charge across the epitaxial stack is modeled and studied. Furthermore, impact of surface and bulk traps on two-dimensional electron gas, device characteristics, and gate leakage is accounted in this paper. For the first time, surface states modeled as donor type traps were correlated with gate leakage. Moreover, a new approach to accurately model the forward gate leakage in Schottky gate devices is proposed. Finally, impact of lattice and carrier heating is studied, while highlighting the relevance of carrier heating, lattice heating, and bulk traps over the device characteristics. In addition to this, modeling strategy for other critical aspects like parasitic charges, quantum effects, S/D Schottky contacts, and high field effects is presented.read more
Citations
More filters
Proceedings ArticleDOI
Simulation of Self-Heating and Bulk Trapping Effects on Drain Current Static and Transient Characteristics of AlGaN/GaN HEMTs
TL;DR: In this paper, the drain-lag turn-on transient simulations are performed to study the dynamic performance of the HEMTs and the self-heating effect on the drain current transient response is analyzed.
Interplay of Device Design and Carbon-Doped GaN Buffer Parameters in Determining Dynamic in AlGaN/GaN HEMTs
TL;DR: A complex interplay between the device design and the epi-stack parameters is revealed, which determines the electron trapping in the carbon-doped GaN buffer, leading to dynamic ON resistance in AlGaN HEMTs.
Proceedings ArticleDOI
Gate topologies for mitigation of short channel effects in highly scaled AlGaN/GaN HEMTs
TL;DR: In this article, the impact of different gate architectures in controlling short channel effects in scaled AlGaN/GaN HEMT devices using calibrated 2-D TCAD simulations is explored.
Journal ArticleDOI
Examination of Trapping Effects on Single-Event Transients in GaN HEMTs
TL;DR: In this article , the effect of various trapping centers on single-event transients (SETs) in GaN high-electron-mobility transistors was examined via calibrated technology computer-aided design (TCAD) simulations.
Proceedings ArticleDOI
Dynamic Interplay of Surface and Buffer Traps in Determining Drain Current Injection induced Device Instability in OFF-state of AlGaN/GaN HEMTs
TL;DR: In this paper , the authors reveal a complex interplay of surface and buffer traps in determining AlGaN/GaN HEMT device's response to an OFF-state drain current injection stress.
References
More filters
Journal ArticleDOI
Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
Oliver Ambacher,Joseph A. Smart,James R. Shealy,Nils Weimann,K. Chu,M. J. Murphy,William J. Schaff,L.F. Eastman,Roman Dimitrov,L. Wittmer,Martin Stutzmann,W. Rieger,J. Hilsenbeck +12 more
TL;DR: In this article, the authors investigated the role of spontaneous and piezoelectric polarization on the carrier confinement at GaN/AlGaN and AlGaN/GaN interfaces.
Journal ArticleDOI
Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures
Oliver Ambacher,B. E. Foutz,Joseph A. Smart,James R. Shealy,Nils Weimann,K. Chu,M. J. Murphy,A. J. Sierakowski,William J. Schaff,L.F. Eastman,Roman Dimitrov,A. Mitchell,Martin Stutzmann +12 more
TL;DR: In this paper, a combination of high resolution x-ray diffraction, atomic force microscopy, Hall effect, and capacitance-voltage profiling measurements is used to calculate the polarization induced sheet charge bound at the AlGaN/GaN interfaces.
Journal ArticleDOI
Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors
TL;DR: In this paper, the origin of the two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructure field effect transistors is examined theoretically and experimentally.
Journal ArticleDOI
Electron and hole mobilities in silicon as a function of concentration and temperature
TL;DR: In this paper, an analytical expression for the electron and hole mobility in silicon based on both experimental data and modified Brooks-Herring theory of mobility was derived, which allows one to obtain electron and holes mobility as a function of concentration up to \sim 10^{20} cm-3 in an extended and continuous temperature range (250-500 K) within ± 13 percent of the reported experimental values.
Journal ArticleDOI
The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs
TL;DR: In this paper, the authors reported the highest reported microwave power density for undoped sapphire substrated AlGaN/GaN HEMT's on the same wafer.