A Comprehensive Computational Modeling Approach for AlGaN/GaN HEMTs
Citations
54 citations
Cites background or methods from "A Comprehensive Computational Model..."
...These surface traps are taken to compensate hole density on surface [14] and the concentration value is selected so as to achieve the required nS and the gate leakage [14]....
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...This hole density is attributed to polarization charges present at the GaN/AlN interface and is discussed in detail in our earlier work [14]....
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...An unintentional (n-type) doping of 1×1015 cm−3 is considered in the GaN buffer [14]....
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...reported in [14]....
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...Modeling aspects related to channel transport, mobility, and sheet charge density (nS) were calibrated with experimental data according to framework described in our earlier work [14]....
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35 citations
Cites methods from "A Comprehensive Computational Model..."
...Electron mobility, contact resistance, surface trap charges, and so on were calibrated with experimental data, which has been elaborated in our earlier work [23]....
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...A well-calibrated Technology CAD setup, as described and used in our earlier works [23]–[25], has been used here....
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31 citations
Cites background or methods from "A Comprehensive Computational Model..."
...electron density, mobility and related transport parameters are calibrated with the experimental data as per the framework discussed in our earlier work [23]....
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...the one described in our earlier work [23], and is discussed in...
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30 citations
References
421 citations
"A Comprehensive Computational Model..." refers methods in this paper
...In this work these parameters are adopted from [38], which were extracted using Monte Carlo simulations and offer good agreement with mobility measured....
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...[38], which is adopted in this work while using model parameters extracted from Monte Carlo simulations [38]:...
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...Model given below, as adopted from [38], reasonably approximates the low field mobility...
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418 citations
409 citations
"A Comprehensive Computational Model..." refers methods in this paper
...The simulation studies in [10] and [11] have presented effect of gate connected [10] and source connected [11] field plates on the breakdown voltage of the device, which was further extended by Saito et al....
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...on-resistance (Vbr-Ron ) trade-off [11]....
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320 citations
316 citations
"A Comprehensive Computational Model..." refers methods in this paper
...to that of Schrödinger equation and to have acceptable numerical cost, density gradient quantum correction model [22], [23] is deployed in this work, while using Schrödinger equation to...
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