A Comprehensive Computational Modeling Approach for AlGaN/GaN HEMTs
Citations
54 citations
Cites background or methods from "A Comprehensive Computational Model..."
...These surface traps are taken to compensate hole density on surface [14] and the concentration value is selected so as to achieve the required nS and the gate leakage [14]....
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...This hole density is attributed to polarization charges present at the GaN/AlN interface and is discussed in detail in our earlier work [14]....
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...An unintentional (n-type) doping of 1×1015 cm−3 is considered in the GaN buffer [14]....
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...reported in [14]....
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...Modeling aspects related to channel transport, mobility, and sheet charge density (nS) were calibrated with experimental data according to framework described in our earlier work [14]....
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35 citations
Cites methods from "A Comprehensive Computational Model..."
...Electron mobility, contact resistance, surface trap charges, and so on were calibrated with experimental data, which has been elaborated in our earlier work [23]....
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...A well-calibrated Technology CAD setup, as described and used in our earlier works [23]–[25], has been used here....
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31 citations
Cites background or methods from "A Comprehensive Computational Model..."
...electron density, mobility and related transport parameters are calibrated with the experimental data as per the framework discussed in our earlier work [23]....
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...the one described in our earlier work [23], and is discussed in...
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30 citations
References
316 citations
"A Comprehensive Computational Model..." refers background or result in this paper
...[6], [7] by surface passivation also support presence of surface traps [27], pertaining to Nitrogen vacancies....
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...for negative charge carriers in the channel and (ii) presence of surface states, which behave as traps to capture these hole [7]....
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...It shows that hole current is fully compensated by donor type surface states resulting in a negligible hole current, which supports the earlier theory [7]....
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...Earlier works [6]–[9] have extensively discussed effect of traps on drain/gate lag effect [6], drain current dispersion [7], high field performance of device [8], gate leakage and breakdown characteristics of the device [9]....
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270 citations
"A Comprehensive Computational Model..." refers background in this paper
...have attempted to model polarization charge [6]–[8], [10], [13]– [15], [17], these works limit the polarization effect inside the AlGaN layer by adding a +σ charge at the AlGaN/GaN interface and an equivalent −σ charge at the AlGaN top surface....
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210 citations
"A Comprehensive Computational Model..." refers background in this paper
...quires physics based modeling of lattice heating with appropriate thermal boundary conditions, which however was neglected in earlier works [6]–[10], [12], [13]....
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...Earlier works [6]–[9] have extensively discussed effect of traps on drain/gate lag effect [6], drain current dispersion [7], high field performance of device [8], gate leakage and breakdown characteristics of the device [9]....
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...[6], [7] by surface passivation also support presence of surface traps [27], pertaining to Nitrogen vacancies....
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...have attempted to model polarization charge [6]–[8], [10], [13]– [15], [17], these works limit the polarization effect inside the AlGaN layer by adding a +σ charge at the AlGaN/GaN interface and an equivalent −σ charge at the AlGaN top surface....
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...While earlier works have assumed presence of surface traps [6]–[8], [13], [42], however they were modeled using a fixed surface trap density and energy, without considering their impact on gate leakage....
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209 citations
185 citations
"A Comprehensive Computational Model..." refers methods in this paper
...[41], which has used WKB approximation for calculating tunneling probability....
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