Journal ArticleDOI
A Comprehensive Computational Modeling Approach for AlGaN/GaN HEMTs
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TLDR
In this paper, the impact of surface and bulk traps on two-dimensional electron gas, device characteristics, and gate leakage is accounted for, and a new approach to accurately model the forward gate leakage in Schottky gate devices is proposed.Abstract:
This paper for the first time presents a comprehensive computational modeling approach for AlGaN/GaN high electron mobility transistors. Impact of the polarization charge at different material interfaces on the energy band profile as well as parasitic charge across the epitaxial stack is modeled and studied. Furthermore, impact of surface and bulk traps on two-dimensional electron gas, device characteristics, and gate leakage is accounted in this paper. For the first time, surface states modeled as donor type traps were correlated with gate leakage. Moreover, a new approach to accurately model the forward gate leakage in Schottky gate devices is proposed. Finally, impact of lattice and carrier heating is studied, while highlighting the relevance of carrier heating, lattice heating, and bulk traps over the device characteristics. In addition to this, modeling strategy for other critical aspects like parasitic charges, quantum effects, S/D Schottky contacts, and high field effects is presented.read more
Citations
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Journal ArticleDOI
Part I: Physical Insight Into Carbon-Doping-Induced Delayed Avalanche Action in GaN Buffer in AlGaN/GaN HEMTs
TL;DR: In this article, the effect of carbon-doping in GaN buffer on the performance of AlGaN/GaN HEMTs is discussed. But the authors focus on the degradation of the breakdown voltage, leakage current, sheet charge density, and dynamic ONresistance.
Journal ArticleDOI
Novel Drain-Connected Field Plate GaN HEMT Designs for Improved V BD – R ON Tradeoff and RF PA Performance
TL;DR: In this paper, the breakdown behavior of drain-connected field plate-based GaN HEMTs was investigated and the proposed vertical and dual-field-plate designs were proposed to alleviate the channel electric field by uniformly distributing it vertically into the buffer region.
Journal ArticleDOI
Part II: Proposals to Independently Engineer Donor and Acceptor Trap Concentrations in GaN Buffer for Ultrahigh Breakdown AlGaN/GaN HEMTs
TL;DR: In this paper, a modified Si-doping profile in the GaN buffer is proposed to lower the Cdoping concentration near GaN channel to mitigate the adverse effects of acceptor traps.
Journal ArticleDOI
“Hole Redistribution” Model Explaining the Thermally Activated R ON Stress/Recovery Transients in Carbon-Doped AlGaN/GaN Power MIS-HEMTs
Nicolo Zagni,Alessandro Chini,Francesco Maria Puglisi,Matteo Meneghini,Gaudenzio Meneghesso,Enrico Zanoni,Paolo Pavan,Giovanni Verzellesi +7 more
TL;DR: In this paper, the authors show that the RON increase and decrease during stress and recovery experiments in carbon-doped AlGaN/GaN power metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs).
References
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Journal ArticleDOI
Effect of Optical Phonon Scattering on the Performance of GaN Transistors
TL;DR: In this paper, a model based on optical phonon scattering is developed to explain peculiarities in the current drive, transconductance, and high-speed behavior of short-gate-length GaN transistors.
Journal ArticleDOI
Influence of Buffer Carbon Doping on Pulse and AC Behavior of Insulated-Gate Field-Plated Power AlGaN/GaN HEMTs
Giovanni Verzellesi,L. Morassi,Gaudenzio Meneghesso,Matteo Meneghini,Enrico Zanoni,Gianmauro Pozzovivo,S. Lavanga,Thomas Detzel,Oliver Häberlen,Gilberto Curatola +9 more
TL;DR: In this article, the drain-source capacitance of double-field-plate power AlGaN/GaN HEMTs with C-doped buffers is modeled as a carbon doping mechanism.
Posted Content
Effect of optical phonon scattering on the performance of GaN transistors
Debdeep Jena,Siddharth Rajan +1 more
TL;DR: In this article, a model based on optical phonon scattering is developed to explain peculiarities in the current drive, transconductance, and high speed behavior of short gate length GaN transistors.
Journal ArticleDOI
Comparison of the transport properties of high quality AlGaN/AlN/GaN and AlInN/AlN/GaN two-dimensional electron gas heterostructures
Remziye Tülek,Aykut Ilgaz,S. Gökden,A. Teke,Mustafa Öztürk,Mehmet Kasap,Süleyman Özçelik,Engin Arslan,Ekmel Ozbay +8 more
TL;DR: In this paper, the transport properties of high mobility AlGaN/AlN/GaN and high sheet electron density 2DEG heterostructures have been studied, and various scattering mechanisms such as acoustic and optical phonons, interface roughness, and alloy disordering were included in the theoretical model that was applied to the temperature dependent...
Journal ArticleDOI
Gate-Recessed InAlN/GaN HEMTs on SiC Substrate With $ \hbox{Al}_{2}\hbox{O}_{3}$ Passivation
TL;DR: In this article, a low-damage gate-recessed InAlN/Aln/GaN high-electron mobility transistors (HEMTs) on SiC substrates with 25-nm Al2O3 passivation was studied.