Q2. What are the future works mentioned in the paper "A comprehensive model of pmos nbti degradation" ?
One of the key goal of their future work would be to clarify the role of such processing changes on NBTI performance.
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460 citations
431 citations
...Firstly, oxide thickness was assumed to be infinite and the polysilicon was considered either as a reflector or absorber [1]....
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...Numerical simulations have given values that are both somewhat larger [61] and smaller [63]....
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...Another useful relation sometimes invoked in treatments of NBTI is the conservation rule [29,61,62]...
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...According to some viewpoints, therefore, bulk positive charge generation is a separate process involving trapping of holes, not defect generation via a low-field reaction [61,65,79]....
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...Another description of the effect of oxide thickness has claimed that the time dependence changes to t when the diffusion front of X reaches the gate electrode [61]....
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...[50,63] Si–H + h M Si + H [61,63] Si–H þ hþ $ Si þ þ 2H2 [63] Si–H + hMSi +H [63,78] Si–H + H M Si + + H2...
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347 citations
..., the gate voltages on n- and p-channel devices are not the same for a given oxide electric field [5]....
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...In this paper, I will draw upon the excellent recent reviews by Stathis and Zafar [3], Huard et al. [4], and Alam and Mahapatra [5] as well as many other papers published in the last few years....
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...[4], and Alam and Mahapatra [5] as well as many other papers published in the last few years....
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...2004 Published by Elsevier Ltd....
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678 citations
...In this paper, we construct a comprehensive model for NBTI phenomena within the framework of the standard reaction–diffusion model....
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673 citations
...In this paper, we construct a comprehensive model for NBTI phenomena within the framework of the standard reaction–diffusion model....
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One of the key goal of their future work would be to clarify the role of such processing changes on NBTI performance.