A ferroelectric memristor
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Cites background from "A ferroelectric memristor"
...Other approaches that also store memory state as resistance, but that exhibit a range of different behaviors include spin-transfer torque magnetic random access memories (STT–MRAMs) [146]–[148], ferroelectric devices [149], and phase change materials [150]–[152]....
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"A ferroelectric memristor" refers background in this paper
...Figure 4a–c (4d–f) also shows the fit of the experimental data by equation (2) (equation (1)) for negative (respectively, positive) applied voltage with amplitude 2....
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7,585 citations
"A ferroelectric memristor" refers background in this paper
...Figure 4a–c (4d–f) also shows the fit of the experimental data by equation (2) (equation (1)) for negative (respectively, positive) applied voltage with amplitude 2....
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3,650 citations
"A ferroelectric memristor" refers background in this paper
...The nonlinear resistance R depends on V , t and σ that varies over time as described in equation (4)....
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...In contrast to the situation for most other existing memristive systems, we thus reach a description of ferroelectricmemristors that goes beyond basic phenomenology and we provide the expression of the function f in equation (4) for the temporal evolution of the state parameter based on physical arguments....
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...dσ/dt = f (σ ,V ,t ) (4) where σ represents one or several state variables, V is the voltage, i is the current, t is the time and R and f are system-dependent functions....
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...Equations (3) and (4) impose a strict framework for resistive switching devices to truly behave as memristive systems....
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2,744 citations
"A ferroelectric memristor" refers background in this paper
...Equations (3) and (4) impose a strict framework for resistive switching devices to truly behave as memristive systems....
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2,159 citations