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Proceedings ArticleDOI

A gate-level leakage power reduction method for ultra-low-power CMOS circuits

05 May 1997-pp 475-478
TL;DR: The proposed design changes consist of minimal overhead circuitry that puts the circuit into a "low leakage standby state", whenever it goes into standby, and allows it to return to its original state when it is reactivated.
Abstract: In order to reduce the power dissipation of CMOS products, semiconductor manufacturers are reducing the power supply voltage. This requires that the transistor threshold voltages be reduced as well to maintain adequate performance and noise margins. However, this increases the subthreshold leakage current of p and n MOSFETs, which starts to offset the power savings obtained from power supply reduction. This problem will worsen in future generations of technology, as threshold voltages are reduced further. In order to overcome this, we propose a design technique that can be used during logic design in order to reduce the leakage current and power. We target designs where parts of the circuit are put in "standby" mode when not in use, which is becoming a common approach for low power design. The proposed design changes consist of minimal overhead circuitry that puts the circuit into a "low leakage standby state", whenever it goes into standby, and allows it to return to its original state when it is reactivated. We give an efficient algorithm for computing a good low leakage power state. We demonstrate this method on the ISCAS-89 benchmark suite and show leakage power reductions of up to 54% for some circuits.

Summary (2 min read)

1. Introduction

  • As VLSI devices have grown in complexity and density, their power consumption has become a major design concern.
  • High power consumption also impacts battery-powered portable devices by requiring either large battery packs or unacceptably short operating time.
  • Methods by Horiguchi, et al., [3] and Mutoh, et al., [4] use circuit and process level changes to reduce the leakage power.
  • The authors design methodology is given in section 2. Section 3 describes the gate library characterization process.

2. Design Methodology

  • This is based on the observation that individual CMOS gates show a variation in the leakage power based on the input vector, as seen in Table 1.
  • Modern low-power designs make extensive use of clock-gating.
  • Thus, whenever a circuit is put in standby, the latches or flip-flops inside it maintain the last state they were in.
  • This has to be done only once, during the logic design phase.
  • The authors have done this by building look-up table models as in Table 1 for several kinds of logic gates and then running a simple steady state logic simulation in order to determine the leakage for a given circuit input vector.

3. Gate Library Characterization

  • In order to efficiently estimate the leakage of a large combinational circuit for a given input pattern, the authors need to develop models for logic gates that give the leakage current drawn by the gate for each of its input patterns.
  • Using a circuit-level simulator, such as SPICE, and an appropriate MOSFET device model, the authors determine the leakage current for each input pattern and log the results into a look-up table.
  • As an example, Table 1 shows the look-up table for a 2-input NAND gate.
  • The values in this table are based on data which was obtained from a major semiconductor manufacturer, which the authors will refer to as “company A,” and is derived from a 0.5 µm CMOS process.

4. Input Vector Determination Technique

  • Consider a combinational circuit whose input nodes are state bits of an overall sequential circuit which will be put in standby mode.
  • The “search problem” for the vector that gives the least leakage power is a very difficult one because of the potentially huge size of the search space.
  • In the following, the authors will derive a simple result (9) which gives the number n of vectors required, a priori, for a given desired “quality” of the solution.
  • Consider the set of all possible input vectors to the circuit, and consider an experiment by which a vector is chosen at random, with all vectors having the same probability of being chosen.
  • Let f(x) and F (x) be the probability density function (pdf) and the cumulative density function (cdf) of X, respectively.

5. Latch Designs

  • The circuitry used to force the low-power input vector onto the combinational logic should add as little speed and area overhead as possible to the design.
  • Solutions such as pass-gate multiplexers and CMOS NAND and NOR gates can be used to force the outputs to the desired value during sleep mode.
  • Fig. 2 shows standard static “jamb” latches [6] modified to force a value at the output during sleep mode.
  • Fig. 3 shows modified dynamic C2MOS flip-flops [7].
  • Clearly, other types of latches and flip-flops can also be modified in similar ways to force appropriate values during sleep mode.

6. Experimental Results

  • The authors have tested this design methodology on the ISCAS-89 benchmark circuits.
  • Table 2 shows the savings realized by this method using the probabilistic technique developed in Section 4 for error tolerances of 5% and 1% and also using a fixed, large sampling of 100,000 input vectors.
  • These “savings” represent the percentage difference between the lowest leakage power obtained in each case and the largest leakage found for each circuit during the 100,000 vector run, relative to this largest leakage.
  • Thus, one may think of these as being potential, or best case, savings.

7. Conclusion

  • The authors have proposed a novel design method that can be used during logic design to reduce the leakage power of CMOS circuits that use clockgating to reduce the dynamic power dissipation.
  • Using minimal additional circuitry, the authors modify the original logic design to force the combinational logic into a low-leakage state during an idle period.
  • To find such a low-leakage state, the authors have developed an efficient algorithm that determines a good input vector using a sampling of random vectors.
  • The size of this sampling is determined a priori using user-supplied quality measures.
  • The authors have demonstrated this method on the ISCAS-89 benchmark circuits and shown leakage power reductions of up to 54%.

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A Gate-Level Leakage Power Reduction Method
for Ultra-Low-Power CMOS Circuits
Jonathan P. Halter and Farid N. Najm
ECE Dept. and Coordinated Science Lab.
University of Illinois at Urbana-Champaign
Urbana, IL 61801
Abstract
In order to reduce the power dissipation of CMOS
products, semiconductor manufacturers are reducing
the power supply voltage. This requires that the tran-
sistor threshold voltages be reduced as well to main-
tain adequate performance and noise margins. How-
ever, this increases the subthreshold leakage current of
p and n MOSFETs, which starts to offset the power
savings obtained from power supply reduction. This
problem will worsen in future generations of technol-
ogy, as threshold voltages are reduced further. In order
to overcome this, we propose a design technique that
can be used during logic design in order to reduce the
leakage current and power. We target designs where
parts of the circuit are put in standby” mode when
not in use, which is becoming a common approach for
low power design. The proposed design changes con-
sist of minimal overhead circuitry that puts the circuit
into a low leakage standby state, whenever it goes
into standby, and allows it to return to its original
state when it is reactivated. We give an efficient algo-
rithm for computing a good low leakage power state.
We demonstrate this method on the ISCAS-89 bench-
mark suite and show leakage power reductions of up
to 54% for some circuits.
1. Introduction
As VLSI devices have grown in complexity and
density, their power consumption has become a ma-
jor design concern. High power consumption exacer-
bates reliability problems by raising the device oper-
ating temperature. It also increases the current den-
sity in the supply lines, causing greater electromigra-
tion problems. High power consumption also impacts
battery-powered portable devices by requiring either
large battery packs or unacceptably short operating
time. These issues have forced designers to aggres-
sively pursue low-power design methodologies.
It is well known that the power dissipation is di-
rectly proportional to the square of the power supply
voltage, while it is proportional only to the first power
of the capacitance and frequency (P
av
= CV
2
f).
Thus, much work has been done on the technology
side to reduce the power supply voltage from 5 V to
3.3 V and below. This trend will likely continue in the
future, and we may soon see 1 V or lower supplies [1].
However, reduction in the supply voltage has a nega-
tive effect on circuit performance. Propagation delays
through logic gates increase as the supply voltage de-
creases, and the overall noise immunity of the circuit
decreases.
This work was supported by Intel Corp. and by a
National Science Foundation Graduate Fellowship.
To reduce these undesirable effects, threshold
voltages have also been lowered [1]. However, lower
threshold voltages increase the leakage power dissipa-
tion caused by subthreshold conduction in the MOS-
FETs. For circuits with very low threshold devices, the
standby (leakage) power is no longer negligible [1] and
can even dominate the active and short-circuit power.
Future circuits promise lower threshold voltages and
even greater standby power dissipation. Thus, meth-
ods to manage or reduce the leakage power are needed.
A number of leakage reduction methods have al-
ready been proposed. Methods by Horiguchi, et al.,
[3] and Mutoh, et al., [4] use circuit and process level
changes to reduce the leakage power. In this paper, we
propose a novel design method that can be used dur-
ing logic design in order to reduce the leakage power
of CMOS circuits. This approach is useful for designs
in which parts of the circuit are put into idle or sleep
modes by holding the clock fixed at either low or high.
Such clock-gating schemes are quite common in low-
power designs [2], so the proposed approach should be
widely applicable.
Our approach is based on the observation that a
CMOS logic gate dissipates leakage current in steady
state which is dependent on the gate input state. Thus,
given a multi-gate logic circuit, we modify the origi-
nal logic design, using minimal additional circuitry, to
force the combinational logic into a low-leakage state
during an idle period. To find such a low-leakage state,
we have developed an efficient algorithm that deter-
mines a good (low-leakage) input vector using a sam-
pling of random vectors. The size of the sample set is
determined a priori using user-supplied quality mea-
sures. The algorithm is based on a gate library which
we have characterized for leakage current. We have
demonstrated this method on the ISCAS-89 bench-
mark circuits and shown leakage power reductions of
up to 54%.
Our design methodology is given in section 2. Sec-
tion 3 describes the gate library characterization pro-
cess. An input vector selection technique is developed
in section 4. Suitable latch designs are shown in sec-
tion 5, and section 6 shows the results of our method.
2. Design Methodology
We propose to use a natural characteristic of static
CMOS gates in order to reduce the leakage power.
This is based on the observation that individual CMOS
gates show a variation in the leakage power based on
the input vector, as seen in Table 1. Larger combina-
tional circuits composed of many static CMOS gates
exhibit similar variation, as shown in Fig. 1, which
displays the leakage power histogram for a 119-gate

circuit over a population of 100,000 randomly chosen
input vectors. The leakage power for the circuit varies
by a factor of two from the minimum leakage power to
the maximum. Thus the leakage power is dependent
on the input vector applied to the circuit.
3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 8
x 10
−8
0
2000
4000
6000
8000
10000
12000
14000
Leakage Power
Number of Occurrences
Figure 1. S298 leakage power histogram.
Modern low-power designs make extensive use of
clock-gating. Clock-gating is a logic design method
in which the clock is disabled to parts of the circuit
during periods when they are not required to exe-
cute. These parts are said to be in standby mode, also
called sleep mode or idle mode. The power supplies
to these parts are not turned off, because of the per-
formance and noise penalties that would result if this
were done. Thus, whenever a circuit is put in standby,
the latches or flip-flops inside it maintain the last state
they were in. As a result, the circuit dissipates leak-
age power during standby corresponding directly to
the logic state in which it was left.
Using minimal additional circuitry, we propose to
modify the logic design so that whenever a circuit
is put in standby, its internal state is set to a low-
leakage state, preferably the lowest-leakage state pos-
sible. When that circuit is reactivated, the circuit will
be returned to its last valid state. If the idle periods
are long enough, this should lead to significant power
reductions.
In section 4, we will present an efficient algorithm
for finding a good low-leakage state. This has to be
done only once, during the logic design phase. Once a
good state vector has been determined, it can be mul-
tiplexed onto the logic inputs. Upon entering sleep
mode, the state bits are selectively forced to 0 or 1,
depending on the latch design used. Suitable latch de-
signs in two common design styles are shown in section
5.
The search algorithm for a low-leakage input vec-
tor, to be given in section 4, depends on being able to
estimate the leakage for a candidate vector. A circuit-
level simulator, such as SPICE, can be used to do
this, but a more efficient solution is possible since the
leakage depends only on the steady state node values.
Thus, it is more efficient to build library models for
logic gates that give the leakage current drawn by a
gate for each of its input combinations. We have done
this by building look-up table models as in Table 1 for
several kinds of logic gates and then running a simple
steady state logic simulation in order to determine the
leakage for a given circuit input vector.
3. Gate Library Characterization
In order to efficiently estimate the leakage of a
large combinational circuit for a given input pattern,
we need to develop models for logic gates that give the
leakage current drawn by the gate for each of its in-
put patterns. Using a circuit-level simulator, such as
SPICE, and an appropriate MOSFET device model,
we determine the leakage current for each input pat-
tern and log the results into a look-up table. As an ex-
ample, Table 1 shows the look-up table for a 2-input
NAND gate. The values in this table are based on
data which was obtained from a major semiconductor
manufacturer, which we will refer to as “company A,”
and is derived from a 0.5 µm CMOS process.
Tab le 1.
Leakage current for a 2-input NAND gate.
Input Leakage
Vector Current
00 3.944 × 10
14
A
01 1.525 × 10
13
A
10 1.365 × 10
13
A
11 4.568 × 10
14
A
4. Input Vector Determination Technique
Consider a combinational circuit whose input
nodes are state bits of an overall sequential circuit
which will be put in standby mode. We need to
choose an input vector for the combinational circuit
that causes it to dissipate very low leakage power. The
“search problem for the vector that gives the least
leakage power is a very difficult one because of the po-
tentially huge size of the search space. Furthermore,
it is not absolutely necessary to find this minimizing
vector. Instead, one is interested in a vector that gives
a significantly lower value of leakage and which can
be found efficiently. We have developed an algorithm
to find such a vector based on a process of random
sampling. Randomly chosen vectors are applied to the
circuit and the leakage due to each is monitored, and
the vector which gives the least observed leakage value
is reported. It will be seen that this relatively sim-
ple approach works well, in the sense that a relatively
small number of vectors is enough to come close to the
lowest leakage current that would be observed from a
much larger number of vectors.
Clearly, the number of vectors to be applied de-
termines the “quality” of the resulting solution. In the
following, we will derive a simple result (9) which gives
the number n of vectors required, a priori, for a given

desired “quality” of the solution. To make this termi-
nology more specific, we need to invoke a probabilistic
view of the space of the Boolean vectors, as follows.
Consider the set of all possible input vectors to
the circuit, and consider an experiment by which a
vector is chosen at random, with all vectors having the
same probability of being chosen. Thus, the Boolean
space becomes a probability sample space.Ifvis an
input vector, define a random variable (RV) X(v)to
be the leakage current drawn by the circuit when v is
applied at its input under steady state. Let f(x)and
F(x) be the probability density function (pdf) and the
cumulative density function (cdf) of X, respectively.
Atypicalf(x) will be similar to the leakage power
histogram in Fig. 1.
If we choose n input vectors v
1
,v
2
,...,v
n
at ran-
dom, by making an independent choice every time,
the leakage current obtained in each trial, is a sam-
ple of an independent RV X
i
= X(v
i
), i =1,...,n,
with pdf f(x). Since they are independent, the set
{X
1
,X
2
,...,X
n
} constitutes a random sample.
Define a new RV Y =min(X
1
,X
2
,...,X
n
), so
that Y is the (random) lowest leakage value over n
trials. The RV Y is called the first order statistic of
the random sample. Suppose we are able to establish
that, for sufficiently large n,wehave:
P{F(Y)}≥α (1)
where P{·} denotes probability, 0 1with0,
0 α 1withα1, and F (·)isthecdfofXas
stated above. This probability statement (1) would al-
low us to make a statistical condence statement about
an observed value (or sample)ofY, which we will de-
note by y, as follows: with better than α condence, we
have F (y) . This terminology is commonly used in
statistics. Using the definition of the cumulative den-
sity function, i.e., F (y)=P{X y}, this would lead
to the statement that with better than α condence,
we have:
P{X y}≤ (2)
Thus, if we can determine a value of n for
which (1) holds, then an observed value y of the RV
Y will have the following special property: with better
than α condence, y is a leakage current value such
that only a very small fraction (less than )ofvectors
in the Boolean space have leakage currents less than y.
If we keep track of which input vector generated the
leakage value y, that vector would be a good candidate
for the desired low-leakage input vector. The quality
of this vector would be determined by α and .
We now determine the value of n for which (1)
holds for a given and α. This requires the distribution
of the RV Z = F (Y ), which is known to have a beta
distribution from the field of reliability analysis and
can be obtained from the rank distribution [5]:
g(z)dz =
n!
(j 1)!(n j)!
z
j1
(1 z)
nj
dz (3)
with j =1and0z1. Integrating this pdf to
determine the cdf of Z yields:
P{F(Y)}=
Z
0
n!
0!(n 1)!
z
0
(1 z)
n1
dz
=1(1 )
n
(4)
Setting this to be greater than α, according to (1),
leads to the desired result:
n
ln(1 α)
ln(1 )
(5)
Thus, in order to have 95% confidence (α =0.95)
that less than 5% ( =0.05) of the vector popula-
tion has leakage current which is less than the least
observed leakage (y)fromntrials, we need n
dln(0.05)/ ln(0.95)e = 59. For α = 99% confidence and
= 1% error tolerance, we need at least 458 trials. In
general, given a desired confidence α and tolerance ,
one can determine n a priori using (5).
5. Latch Designs
The circuitry used to force the low-power input
vector onto the combinational logic should add as lit-
tle speed and area overhead as possible to the design.
Solutions such as pass-gate multiplexers and CMOS
NAND and NOR gates can be used to force the out-
puts to the desired value during sleep mode. However,
since the combinational circuit being analyzed is as-
sumed to be part of a sequential network, the latches
in the sequential network can be easily modified to
force either a 0 or 1 during sleep mode. Fig. 2 shows
standard static “jamb” latches [6] modified to force a
value at the output during sleep mode. Fig. 3 shows
modified dynamic C
2
MOS flip-flops [7]. Clearly, other
types of latches and flip-flops can also be modified in
similar ways to force appropriate values during sleep
mode.
Vdd
Sleep
Sleep
φ
φ
D
D
Q
Q
Sleep
Sleep
Figure 2. Modified “Jamb” Latches.
6. Experimental Results
We have tested this design methodology on the
ISCAS-89 benchmark circuits. Table 2 shows the sav-
ings realized by this method using the probabilistic
technique developed in Section 4 for error tolerances
of 5% and 1% and also using a fixed, large sampling of
100,000 input vectors. These savings” represent the
percentage difference between the lowest leakage power

obtained in each case and the largest leakage found for
each circuit during the 100,000 vector run, relative to
this largest leakage. Thus, one may think of these as
being potential, or best case, savings. This method
shows savings of up to 54% on circuits of various sizes.
Vdd
Vdd
D Q
Sleep
φ
φφ
φ
Vdd
D Q
φ
φφ
φ
Vdd
Vdd
Sleep
Figure 3. Modified C
2
MOS Latches.
7. Conclusion
In this paper, we have proposed a novel design
method that can be used during logic design to reduce
the leakage power of CMOS circuits that use clock-
gating to reduce the dynamic power dissipation. Us-
ing minimal additional circuitry, we modify the origi-
nal logic design to force the combinational logic into a
low-leakage state during an idle period. To find such
a low-leakage state, we have developed an efficient al-
gorithm that determines a good input vector using a
sampling of random vectors. The size of this sam-
pling is determined a priori using user-supplied qual-
ity measures. We have demonstrated this method on
the ISCAS-89 benchmark circuits and shown leakage
power reductions of up to 54%.
References
[1] A. Chandrakasan, et al., “Design considerations
and tools for low-voltage digital system design,”
in Proc. 33rd. Design Automation Conference,
pp. 113-118, 1996.
[2] G. E. Tellez, et al., “Activity-driven clock design
for low power circuits,’ in Proc. IEEE Intl. Conf.
Computer-Aided Design, pp. 62-65, 1995.
[3] M. Horiguchi, et al., “Switched-source-impedance
CMOS circuit for low standby subthreshold cur-
rent giga-scale LSI’s,” IEEE J. Solid-State Cir-
cuits, vol. 28, pp. 1131-1135, Nov. 1993.
[4] S. Mutoh, et al., “1-V power supply high-speed
digital circuit technology with multithreshold-
voltage CMOS,” IEEE J. Solid-State Circuits,
vol. 30, pp. 847-853, Aug. 1995.
[5] K.C.KapurandL.R.Lamberson,Reliability in
Engineering Design, New York, NY: Wiley, 1977.
[6] N. H. E. Weste and K. Eshraghian, Principles of
CMOS VLSI Design, 2nd. Ed., Reading, Mass.:
Addison-Wesley, 1992.
[7] J. M. Rabaey, Digital Integrated Circuits: A
Design Perspective, Upper Saddle River, NJ:
Prentice-Hall, 1996.
Tab le 2.
Power savings on ISCAS-89 benchmark circuits.
Benchmark 5% 1% 100k
Circuit Gates Savings Savings Savings
s1196 529 28.79% 28.57% 32.57%
s1238 508 30.93% 31.20% 34.47%
s13207 7951 7.80% 8.53% 9.80%
s1423 657 19.78% 20.39% 30.01%
s1488 653 22.53% 23.96% 25.81%
s1494 647 24.18% 24.68% 25.10%
s15850 9772 7.67% 8.36% 9.87%
s208 104 35.89% 40.85% 46.33%
s298 119 47.29% 52.76% 56.72%
s344 160 31.32% 37.58% 42.32%
s349 161 30.67% 32.72% 43.17%
s35932 16065 5.73% 6.21% 6.96%
s382 158 41.44% 40.50% 43.75%
s38417 22179 5.05% 5.77% 6.92%
s38584 19253 11.65% 12.37% 12.89%
s386 159 48.37% 50.91% 54.33%
s400 164 36.73% 38.74% 41.66%
s420 218 30.34% 35.46% 40.53%
s444 181 33.04% 33.29% 34.75%
s510 211 26.35% 28.10% 31.55%
s526 193 49.28% 51.44% 54.74%
s526n 194 44.48% 54.11% 55.25%
s5378 2779 5.93% 6.42% 6.96%
s641 379 34.77% 37.04% 39.56%
s713 393 32.00% 35.60% 38.26%
s820 289 38.02% 40.27% 42.75%
s832 287 37.86% 40.74% 43.12%
s838 446 26.83% 27.33% 32.61%
s9234 5597 8.36% 10.68% 10.96%
s953 395 28.92% 29.55% 36.98%
Citations
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Abstract: Is your memory hierarchy stopping your microprocessor from performing at the high level it should be? Memory Systems: Cache, DRAM, Disk shows you how to resolve this problem. The book tells you everything you need to know about the logical design and operation, physical design and operation, performance characteristics and resulting design trade-offs, and the energy consumption of modern memory hierarchies. You learn how to to tackle the challenging optimization problems that result from the side-effects that can appear at any point in the entire hierarchy.As a result you will be able to design and emulate the entire memory hierarchy. . Understand all levels of the system hierarchy -Xcache, DRAM, and disk. . Evaluate the system-level effects of all design choices. . Model performance and energy consumption for each component in the memory hierarchy.

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Proceedings ArticleDOI
10 Aug 1998
TL;DR: Results on a large number of benchmarks indicate that proper input selection can reduce the standby leakage power by more than 50% for some circuits.
Abstract: Low supply voltage requires the device threshold to be reduced in order to maintain performance. Due to the exponential relationship between leakage current and threshold voltage in the weak inversion region, leakage power can no longer be ignored. In this paper we present a technique to accurately estimate leakage power by accurately modeling the leakage current in transistor stacks. The standby leakage current model has been verified by IISPICE. We demonstrate that the dependence of leakage power on primary input combinations can be accounted for by this model. Based on our analysis we can determine good bounds for leakage power in the standby mode. As a by-product of this analysis, we can also determine the set of input vectors which can put the circuits in the low-power standby mode. Results on a large number of benchmarks indicate that proper input selection can reduce the standby leakage power by more than 50% for some circuits.

372 citations


Cites background or methods from "A gate-level leakage power reductio..."

  • ...In [10], it is noticed that leakage power depends on primary input combinations with no explanation for the mechanism....

    [...]

  • ...The method proposed in [10] uses a random search to determine low-leakage states of the circuit without regard to the circuit structure or the underlying mechanism of leakage power reduction....

    [...]

Proceedings ArticleDOI
06 Aug 2001
TL;DR: A model that predicts the scaling nature of this leakage reduction effect is presented and use of stack effect for leakage reduction and other implications of this effect are discussed.
Abstract: Technology scaling demands a decrease in both V/sub dd/ and V/sub t/ to sustain historical delay reduction, while restraining active power dissipation. Scaling of V/sub t/ however leads to substantial increase in the sub-threshold leakage power and is expected to become a considerable constituent of the total dissipated power. It has been observed that the stacking of two off devices has smaller leakage current than one off device. In this paper we present a model that predicts the scaling nature of this leakage reduction effect. Device measurements are presented to prove the model's accuracy. Use of stack effect for leakage reduction and other implications of this effect are discussed.

366 citations


Cites methods from "A gate-level leakage power reductio..."

  • ...This stack forcing technique can be either used in conjunction with dual-Vt or can be used to reduce the leakage in a single-Vt design....

    [...]

Journal ArticleDOI
TL;DR: Two runtime mechanisms for reducing the leakage current of a CMOS circuit are described and a design technique for applying the minimum leakage input to a sequential circuit is presented, which shows that it is possible to reduce the leakage by an average of 25% with practically no delay penalty.
Abstract: The first part of this paper describes two runtime mechanisms for reducing the leakage current of a CMOS circuit. In both cases, it is assumed that the system or environment produces a "sleep" signal that can be used to indicate that the circuit is in a standby mode. In the first method, the "sleep" signal is used to shift in a new set of external inputs and pre-selected internal signals into the circuit with the goal of setting the logic values of all of the internal signals so as to minimize the total leakage current in the circuit. This minimization is possible because the leakage current of a CMOS gate is strongly dependent on the input combination applied to its inputs. In the second method, nMOS and pMOS transistors are added to some of the gates in the circuit to increase the controllability of the internal signals of the circuit and decrease the leakage current of the gates using the "stack effect". This is, however, done carefully so that the minimum leakage is achieved subject to a delay constraint for all input-output paths in the circuit. In both cases, Boolean satisfiability is used to formulate the problems, which are subsequently solved by employing a highly efficient SAT solver. Experimental results on the combinational circuits in the MCNC91 benchmark suite demonstrate that it is possible to reduce the leakage current in combinational circuits by an average of 25% with only a 5% delay penalty. The second part of this paper presents a design technique for applying the minimum leakage input to a sequential circuit. The proposed method uses the built-in scan-chains in a VLSI circuit to drive it with the minimum leakage vector when it enters the sleep mode. The use of these scan registers eliminates the area and delay overhead of the additional circuitry that would otherwise be needed to apply the minimum leakage vector to the circuit. Experimental results on the sequential circuits in the MCNC91 benchmark suit show that, by using the proposed method, it is possible to reduce the leakage by an average of 25% with practically no delay penalty.

293 citations


Cites methods from "A gate-level leakage power reductio..."

  • ...In [12], the authors used probabilistic methods to reduce the number of simulations necessary to find a solution with a desired accuracy....

    [...]

Journal ArticleDOI
TL;DR: This work reviews circuit behavior at low voltages, specifically in the subthreshold (Vdd < Vth) regime, and suggests new strategies for energy-efficient design, and discusses the energy benefits of techniques such as multiple-threshold CMOS and adaptive body biasing.
Abstract: Energy efficiency has become a ubiquitous design requirement for digital circuits. Aggressive supply-voltage scaling has emerged as the most effective way to reduce energy use. In this work, we review circuit behavior at low voltages, specifically in the subthreshold (Vdd < Vth) regime, and suggest new strategies for energy-efficient design. We begin with a study at the device level, and we show that extreme sensitivity to the supply and threshold voltages complicates subthreshold design. The effects of this sensitivity can be minimized through simple device modifications and new device geometries. At the circuit level, we review the energy characteristics of subthreshold logic and SRAM circuits, and demonstrate that energy efficiency relies on the balance between dynamic and leakage energies, with process variability playing a key role in both energy efficiency and robustness. We continue the study of energy-efficient design by broadening our scope to the architectural level. We discuss the energy benefits of techniques such as multiple-threshold CMOS (MTCMOS) and adaptive body biasing (ABB), and we also consider the performance benefits of multiprocessor design at ultralow supply voltages.

238 citations


Cites methods from "A gate-level leakage power reductio..."

  • ...Leakage-reduction techniques such as multiple-threshold CMOS (MTCMOS) [13], input vector control [14], and threshold control via adaptive body biasing (ABB) [15] are all tools that have the potential to lower Vmin and consequently the total energy consumed by the circuit....

    [...]

References
More filters
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01 Jan 1996
TL;DR: In this paper, the authors present a survey of the state-of-the-art in the field of digital integrated circuits, focusing on the following: 1. A Historical Perspective. 2. A CIRCUIT PERSPECTIVE.
Abstract: (NOTE: Each chapter begins with an Introduction and concludes with a Summary, To Probe Further, and Exercises and Design Problems.) I. THE FABRICS. 1. Introduction. A Historical Perspective. Issues in Digital Integrated Circuit Design. Quality Metrics of a Digital Design. 2. The Manufacturing Process. The CMOS Manufacturing Process. Design Rules-The Contract between Designer and Process Engineer. Packaging Integrated Circuits. Perspective-Trends in Process Technology. 3. The Devices. The Diode. The MOS(FET) Transistor. A Word on Process Variations. Perspective: Technology Scaling. 4. The Wire. A First Glance. Interconnect Parameters-Capitance, Resistance, and Inductance. Electrical Wire Models. SPICE Wire Models. Perspective: A Look into the Future. II. A CIRCUIT PERSPECTIVE. 5. The CMOS Inverter. The Static CMOS Inverter-An Intuitive Perspective. Evaluating the Robustness of the CMOS Inverter: The Static Behavior. Performance of CMOS Inverter: The Dynamic Behavior. Power, Energy, and Energy-Delay. Perspective: Technology Scaling and Its Impact on the Inverter Metrics. 6. Designing Combinational Logic Gates in CMOS. Static CMOS Design. Dynamic CMOS Design. How to Choose a Logic Style? Perspective: Gate Design in the Ultra Deep-Submicron Era. 7. Designing Sequential Logic Circuits. Timing Metrics for Sequential Circuits. Classification of Memory Elements. Static Latches and Registers. Dynamic Latches and Registers. Pulse Registers. Sense-Amplifier Based Registers. Pipelining: An Approach to Optimize Sequential Circuits. Non-Bistable Sequential Circuits. Perspective: Choosing a Clocking Strategy. III. A SYSTEM PERSPECTIVE. 8. Implementation Strategies for Digital ICS. From Custom to Semicustom and Structured-Array Design Approaches. Custom Circuit Design. Cell-Based Design Methodology. Array-Based Implementation Approaches. Perspective-The Implementation Platform of the Future. 9. Coping with Interconnect. Capacitive Parasitics. Resistive Parasitics. Inductive Parasitics. Advanced Interconnect Techniques. Perspective: Networks-on-a-Chip. 10. Timing Issues in Digital Circuits. Timing Classification of Digital Systems. Synchronous Design-An In-Depth Perspective. Self-Timed Circuit Design. Synchronizers and Arbiters. Clock Synthesis and Synchronization Using a Phased-Locked Loop. Future Directions and Perspectives. 11. Designing Arithmetic Building Blocks. Datapaths in Digital Processor Architectures. The Adder. The Multiplier. The Shifter. Other Arithmetic Operators. Power and Spped Trade-Offs in Datapath Structures. Perspective: Design as a Trade-off. 12. Designing Memory and Array Structures. The Memory Core. Memory Peripheral Circuitry. Memory Reliability and Yield. Power Dissipation in Memories. Case Studies in Memory Design. Perspective: Semiconductor Memory Trends and Evolutions. Problem Solutions. Index.

2,744 citations

Journal ArticleDOI
TL;DR: In this article, a multithreshold-voltage CMOS (MTCMOS) based low-power digital circuit with 0.1-V power supply high-speed low power digital circuit technology was proposed, which has brought about logic gate characteristics of a 1.7ns propagation delay time and 0.3/spl mu/W/MHz/gate power dissipation with a standard load.
Abstract: 1-V power supply high-speed low-power digital circuit technology with 0.5-/spl mu/m multithreshold-voltage CMOS (MTCMOS) is proposed. This technology features both low-threshold voltage and high-threshold voltage MOSFET's in a single LSI. The low-threshold voltage MOSFET's enhance speed performance at a low supply voltage of 1 V or less, while the high-threshold voltage MOSFET's suppress the stand-by leakage current during the sleep period. This technology has brought about logic gate characteristics of a 1.7-ns propagation delay time and 0.3-/spl mu/W/MHz/gate power dissipation with a standard load. In addition, an MTCMOS standard cell library has been developed so that conventional CAD tools can be used to lay out low-voltage LSI's. To demonstrate MTCMOS's effectiveness, a PLL LSI based on standard cells was designed as a carrying vehicle. 18-MHz operation at 1 V was achieved using a 0.5-/spl mu/m CMOS process. >

1,338 citations


"A gate-level leakage power reductio..." refers methods in this paper

  • ...Methods by Horiguchi, et al., [3] and Mutoh, et al., [ 4 ] use circuit and process level changes to reduce the leakage power....

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Book
01 Jan 1977
TL;DR: This paper presents a meta-modelling framework for Bayesian Reliability in Design and Testing, which automates the very labor-intensive and therefore time-heavy and expensive process of estimating Reliability Measures.
Abstract: Introduction. Reliability Measures. Static Reliability Models. Probabilistic Engineering Design. Combination of Random Variable's in Design. Interference Theory and Reliability Computations. Reliability Design Examples. Time Dependent Stress-Strength Models. Dynamic Reliability Models. Reliability Estimation: Exponential Distribution. Reliability Estimation: Weibull Distribution. Sequential Life Testing. Bayesian Reliability in Design and Testing. Reliability Optimization. Author Index. Subject Index.

947 citations


"A gate-level leakage power reductio..." refers methods in this paper

  • ...This requires the distribution of the RV Z = F (Y ), which is known to have a beta distribution from the field of reliability analysis and can be obtained from the rank distribution [5]:...

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Journal ArticleDOI
19 May 1993
TL;DR: In this paper, a switched-source-impedance (SSI) CMOS circuit is proposed as a means of reducing the exponential increase of sub-threshold current with threshold-voltage scaling.
Abstract: A switched-source-impedance (SSI) CMOS circuit is proposed as a means of reducing the exponential increase of subthreshold current with threshold-voltage scaling. Inserting a switched impedance at the source of a MOS transistor reduces the standby subthreshold current of giga-scale LSI's operating at room temperature by three to four orders of magnitude and suppresses the current variation caused by threshold-voltage and temperature fluctuations. The scheme is applicable to any combinational and sequential CMOS logic circuits as long as their standby node voltages are predictable. The standby current of a 16-Gb DRAM is expected to be reduced from 1.1 A to 0.29 mA using this scheme. Hence, battery backup of giga-scale LSI's will be possible even at room temperature and above. >

166 citations


"A gate-level leakage power reductio..." refers methods in this paper

  • ...We demonstrate this method on the ISCAS-89 benchmark suite and show leakage power reductions of up to 54% for some circuits....

    [...]

Proceedings ArticleDOI
01 Dec 1995
TL;DR: This paper proposes an approximation algorithm based on recursive matching to solve the clock tree construction problem and solves the gate insertion problems with an exact algorithm employing the dynamic programming paradigm.
Abstract: In this paper we investigate activity-driven clock trees to reduce the dynamic power consumption of synchronous digital CMOS circuits. Sections of an activity-driven clock tree can be turned on/off by gating the clock signals during the active/idle times of the clocked elements. We propose a method of obtaining the switching activity patterns of the clocked circuits during the high level design process. We formulate three novel activity-driven problems. The objective of these problems is to minimize system's dynamic power consumption. We propose an approximation algorithm based on recursive matching to solve the clock tree construction problem. We solve the gate insertion problems with an exact algorithm employing the dynamic programming paradigm. Finally, we present experimental results that verify the effectiveness of our approach. Our work in this paper is a step in understanding how high level decisions (e.g. behavioral design) can affect a low level design (e.g. clock design).

117 citations

Frequently Asked Questions (16)
Q1. What can be used to force the outputs to the desired value during sleep mode?

Solutions such as pass-gate multiplexers and CMOS NAND and NOR gates can be used to force the outputs to the desired value during sleep mode. 

In order to overcome this, the authors propose a design technique that can be used during logic design in order to reduce the leakage current and power. The authors demonstrate this method on the ISCAS-89 benchmark suite and show leakage power reductions of up to 54 % for some circuits. 

Propagation delays through logic gates increase as the supply voltage decreases, and the overall noise immunity of the circuit decreases.† 

For circuits with very low threshold devices, the standby (leakage) power is no longer negligible [1] and can even dominate the active and short-circuit power. 

since the combinational circuit being analyzed is assumed to be part of a sequential network, the latches in the sequential network can be easily modified to force either a 0 or 1 during sleep mode. 

High power consumption also impacts battery-powered portable devices by requiring either large battery packs or unacceptably short operating time. 

In this paper, the authors propose a novel design method that can be used during logic design in order to reduce the leakage power of CMOS circuits. 

A circuitlevel simulator, such as SPICE, can be used to do this, but a more efficient solution is possible since the leakage depends only on the steady state node values. 

It is well known that the power dissipation is directly proportional to the square of the power supply voltage, while it is proportional only to the first power of the capacitance and frequency (Pav = CV 2f). 

In order to efficiently estimate the leakage of a large combinational circuit for a given input pattern, the authors need to develop models for logic gates that give the leakage current drawn by the gate for each of its input patterns. 

Using minimal additional circuitry, the authors propose to modify the logic design so that whenever a circuit is put in standby, its internal state is set to a lowleakage state, preferably the lowest-leakage state possible. 

Consider a combinational circuit whose input nodes are state bits of an overall sequential circuit which will be put in standby mode. 

The “search problem” for the vector that gives the least leakage power is a very difficult one because of the potentially huge size of the search space. 

Using a circuit-level simulator, such as SPICE, and an appropriate MOSFET device model, the authors determine the leakage current for each input pattern and log the results into a look-up table. 

The search algorithm for a low-leakage input vector, to be given in section 4, depends on being able to estimate the leakage for a candidate vector. 

other types of latches and flip-flops can also be modified in similar ways to force appropriate values during sleep mode.