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Proceedings ArticleDOI

A kW-class AlGaN/GaN HEMT pallet amplifier for S-band high power application

26 Dec 2007-pp 176-179
TL;DR: In this article, the authors developed a kW-class AlGaN/GaN HEMT pallet amplifier operating at S-band with output power of over 800 W, high linear gain of 13.6dB and high efficiency of 52% over the wide frequency range of 2.9-3.3 GHz.
Abstract: We developed a kW-class AlGaN/GaN HEMT pallet amplifier operating at S-band. The pallet amplifier consists of an internally partial-matched AlGaN/GaN HEMT optimized for S-band on a copper base with soft PC boards. The developed pallet amplifier showed excellent performance, which is output power of over 800 W, high linear gain of 13.6dB and high efficiency of 52% over the wide frequency range of 2.9-3.3 GHz, operating at 65 V drain voltage with the pulsed condition at a duty of 10% and a pulse width of 200 musec. With 80 V drain voltage operation the peak power reached to 1 kW with 49.5% drain efficiency and 14.1 dB linear gain at 3.2 GHz. To the best of our knowledge, this is the highest power pallet amplifier ever reported for S-band.
Citations
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Journal ArticleDOI
TL;DR: In this paper, an empirical large-signal model for high-power AlGaN/GaN HEMTs utilizing an improved drain current (Ids) formulation with self-heating and charge-trapping modifications is presented.
Abstract: A complete empirical large-signal model for high-power AlGaN/GaN HEMTs (GaN HEMT) utilizing an improved drain current (Ids) formulation with self-heating and charge- trapping modifications is presented. The new drain current equation accurately models the asymmetric bell-shaped transconductance (gm) for high Ids over a large range of biases. A method of systematically employing dynamic IV behavior using pulsed-gate IV and pulsed-gate-pulsed-drain IV datasets over a wide variety of thermal and charge-trapping conditions is presented. The composite nonlinear model accurately predicts the dynamic IV behavior, S-parameters up to 10 GHz, and large-signal wideband harmonic behavior for a multitude of quiescent gate-source and drain-source biases as well as third-order intermodulation distortion (IM3).

100 citations

Journal ArticleDOI
James J. Komiak1
TL;DR: The gallium nitride (GaN) high-electron-mobility transistor (HEMT) has emerged as the dominant force in high-frequency solid-state power amplifiers (PAs) as discussed by the authors.
Abstract: The gallium nitride (GaN) high-electron-mobility transistor (HEMT) has emerged as the dominant force in high-frequency solid-state power amplifiers (PAs)?not that it does not have competition. Silicon (Si) bipolar junction transistors (BJTs) and Si laterally diffused metal?oxide?semiconductor (LDMOS) field-effect transistors (FETs) are still commercially available. They are viable alternatives to GaN HEMTs in aerospace/defense applications such as L-band transponders/interrogators for the identification friend or foe; Link 16 data links; electronic warfare; and surveillance radar; and, in the case of Si LDMOSs, commercial cellular base stations. These older technologies can be favored due to their mature heritage, good performance, and low cost. The pseudomorphic HEMT (PHEMT) is ubiquitous in microwave and millimeter-wave power applications. Vacuum electron devices (VEDs) still reign in the regime of brute power. The GaN HEMT has been displacing these technologies as it has matured and costs have come down.

64 citations

Proceedings ArticleDOI
26 Apr 2009
TL;DR: In this paper, an n-GaN cap and optimized buffer layer are used to realize high efficiency and high reliability by suppressing current collapse and quiescent current (I dsq )-drift.
Abstract: In this paper, we describe highly reliable GaN high electron mobility transistors (HEMTs) for high-power and high-efficiency amplifiers. First, we present the reliability mechanisms and progress on the previously reported GaN HEMTs. Next, we introduce our specific device structure for GaN HEMTs for improving reliability. An n-GaN cap and optimized buffer layer are used to realize high efficiency and high reliability by suppressing current collapse and quiescent current (I dsq )-drift. Finally, we propose a new device process around the gate electrode for further improvement of reliability. Preventing gate edge silicidation leads to reduced gate leakage current and suppression of initial degradation in a DC-stress test under high-temperature and high-voltage conditions. Gate edge engineering plays a key role in reducing the gate leakage current and improving reliability.

44 citations

Proceedings Article
01 Nov 2010
TL;DR: In this paper, the performance of a two-stage X-band MMIC GaN HPA designed for radar applications was investigated. But the performance was not evaluated in a real system environment and the related thermal management issues.
Abstract: This paper reports the performance of a two-stage X-Band MMIC GaN HPA designed for radar applications. At 20V drain voltage bias and 3dB compression point the HPA delivers more than 20W of pulsed RF power with a PAE of 35% over the 8–10.5GHz frequency range, whereas at Vds=35V the MMIC provides more than 50W and 30% of PAE, with a peak power value of 58W at 9 GHz. In order to evaluate the effective HPA power capability in a real system environment and the related thermal management issues, the HPA transient thermal response for pulsed bias conditions has been investigated by means of IR thermo-camera measurements.

27 citations


Cites background from "A kW-class AlGaN/GaN HEMT pallet am..."

  • ...In particular, for radar applications, not only the thermal resistance data is needed, but also transient thermal analysis is necessary to predict the active device channel temperature with pulsed bias conditions [2],[3]....

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Proceedings ArticleDOI
Keiichi Motoi1, K. Matsunaga1, Shingo Yamanouchi1, Kazuaki Kunihiro1, Muneo Fukaishi1 
17 Jun 2012
TL;DR: In this paper, a high-efficiency, high-output-power GaN power amplifier for S-band radar applications is described, which uses an inverse class-F configuration for high efficiency.
Abstract: This paper describes a high-efficiency, high-output-power GaN power amplifier for S-band radar applications. The amplifier uses an inverse class-F configuration for high efficiency. The matching circuit includes a 2nd harmonic resonant circuit to compensate for GaN FET parasitics. The developed GaN single-chip power amplifier delivers output power of 95 W with power added efficiency (PAE) of 72% and high linear gain of 19.8 dB at 2.6 GHz. To the best of our knowledge, this is the highest efficiency for S-band power amplifiers ever reported with nearly 100-W output power.

24 citations

References
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Proceedings ArticleDOI
11 Jun 2006
TL;DR: In this paper, a 500W AlGaN/GaN HEMT power amplifier with a frequency of 1.5GHz in L-band, operating at 65V drain bias voltage.
Abstract: We have successfully developed a 500W AlGaN/GaN HEMT power amplifier with a frequency of 1.5GHz in L-Band, operating at 65V drain bias voltage. This amplifier consists of 4-chips of HEMT die developed for L-band frequency operation with push-pull configuration. The developed amplifier has an output power of 500W and a high linear gain of 17.8dB at the frequency of 1.5GHz under pulsed conditions at a duty of 10% with a pulse width of 100musec. To the best of our knowledge, this is the highest power ever reported for L-band GaN-related amplifier

44 citations

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To the best of our knowledge, this is the highest power pallet amplifier ever reported for S-band.