A Low-Loss Single-Pole-Double-Throw (SPDT) Switch Circuit
Abstract: A low-loss single-pole-double-throw (SPDT) switch circuit using lateral RF MEMS switches has been developed on glass to operate from DC to 20 GHz. High compactness and low loss can be obtained by use of the lateral switches and coplanar waveguide (CPW) configuration. The circuit provides > 24-dB isolation and < 0.9-dB insertion loss up to 20 GHz. The pull-in voltage of the switch is only 12.4 V, with a switching-on time of 35 mus and a switching-off time of 36 mus. A single-mask silicon-on-glass (SiOG) fabrication process has been developed to fabricate the SPDT switch circuit on glass, which has the advantages of low loss and high yield. The whole circuit has a size of 1.64 mm times 1.3 mm.
Cites background or methods from "A Low-Loss Single-Pole-Double-Throw..."
...Fig. 1 shows a wafer transfer fabrication process that specially developed for lateral DC-contact switches and switching circuits [ 6-8 ]....
...By directly applying the Si-core CPW and lateral switches, SPMT switching circuits are designed, fabricated and measured [ 6 , 8, 16]....
...Dispositifs MEMS RF 13 latérale est présenté par Tang ....
...13 latérale est présenté par Tang ....
"A Low-Loss Single-Pole-Double-Throw..." refers background in this paper
...Radio frequency microelectromechanical systems (RF MEMS) can significantly reduce the size, weight, loss and power dissipation of RF components and exhibit a high potential in these areas [ 1-3 ]....