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Proceedings ArticleDOI

A Low-Loss Single-Pole-Double-Throw (SPDT) Switch Circuit

10 Jun 2007-pp 679-682

AbstractA low-loss single-pole-double-throw (SPDT) switch circuit using lateral RF MEMS switches has been developed on glass to operate from DC to 20 GHz. High compactness and low loss can be obtained by use of the lateral switches and coplanar waveguide (CPW) configuration. The circuit provides > 24-dB isolation and < 0.9-dB insertion loss up to 20 GHz. The pull-in voltage of the switch is only 12.4 V, with a switching-on time of 35 mus and a switching-off time of 36 mus. A single-mask silicon-on-glass (SiOG) fabrication process has been developed to fabricate the SPDT switch circuit on glass, which has the advantages of low loss and high yield. The whole circuit has a size of 1.64 mm times 1.3 mm.

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Citations
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Book
09 Aug 2010
Abstract: Radio frequency (RF) microelectromechanical systems (MEMS) have been pursued for more than a decade as a solution of high-performance on-chip fixed, tunable and reconfigurable circuits. This paper reviews our research work on RF MEMS switches and switching circuits in the past five years. The research work first concentrates on the development of lateral DC-contact switches and capacitive shunt switches. Low insertion loss, high isolation and wide frequency band have been achieved for the two types of switches; then the switches have been integrated with transmission lines to achieve different switching circuits, such as single-pole-multi-throw (SPMT) switching circuits, tunable band-pass filter, tunable band-stop filter and reconfigurable filter circuits. Substrate transfer process and surface planarization process are used to fabricate the above mentioned devices and circuits. The advantages of these two fabrication processes provide great flexibility in developing different types of RF MEMS switches and circuits. The ultimate target is to produce more powerful and sophisticated wireless appliances operating in handsets, base stations, and satellites with low power consumption and cost.

49 citations


Cites background or methods from "A Low-Loss Single-Pole-Double-Throw..."

  • ...Fig. 1 shows a wafer transfer fabrication process that specially developed for lateral DC-contact switches and switching circuits [ 6-8 ]....

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  • ...By directly applying the Si-core CPW and lateral switches, SPMT switching circuits are designed, fabricated and measured [ 6 , 8, 16]....

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Patent
23 Dec 2016
Abstract: The present disclosure provides for a microelectromechanical switch including a first port (e.g., input port), one or more second ports (e.g., output ports), a cantilever beam, and a mechanical spring connected to the cantilever beam for providing a mechanical force to move the cantilever beam. The cantilever beam extends from a first end, which is in contact with either the first port or one of the second ports, to a second end that is switchably connectable to the other of the first port or said one of the second ports. The first and second ports and cantilever beam may be formed in a coplanar waveguide.

4 citations

Dissertation
01 Jan 2009
Abstract: Ce travail vise a trouver une technique de test rapide et peu onereuse pour les interrupteurs MEMS RF embarques dans les SiPs (System-in-Package). La complexite des SiPs RF exige une strategie de conception en vue du test (DFT, Design-for-Test) afin d'eviter l'utilisation d'equipements sophistiques de test, aussi bien que de surmonter les difficultes d'acces aux points de mesure embarques. L'approche proposee utilise le principe du test alternatif qui remplace des procedures de test a base des specifications conventionnelles. L'idee de base est d'extraire les performances haute frequence de l'interrupteur a partir des caracteristiques basse frequence du signal d'enveloppe de la reponse. Ces caracteristiques, qui incluent le temps de montee, le temps de descente, ou les amplitudes maximales du signal dans les etats ON et OFF, sont alors utilisees dans un processus de regression pour predire des specifications RF comme les parametres /S/. Un banc de test a ete configure et utilise pour evaluer une dizaine d'echantillons d'un commutateur commercial. Des mesures experimentales ont ete realisees avec un kit d'evaluation developpe par notre partenaire industriel et un kit d'evaluation du developpeur. Les mesures de basse frequence comme le temps de transition ON/OFF et les amplitudes RF de la sortie sont utilisees comme regresseurs pour l'algorithme de regression multivariee qui construit une liaison non-lineaire entre les caracteristiques de basse frequence et les performances RF de l'interrupteur. Ainsi, des performances conventionnelles comme les parametres /S/ sont predites a partir de ces mesures par la regression non-lineaire. Les resultats ont expose une bonne correlation entre les performances RF et les mesures de basse frequence. La validation experimentale a seulement ete realisee pour un petit echantillon d'interrupteurs. Les resultats de simulation ont aussi ete utilises pour evaluer cette correlation.

3 citations


Additional excerpts

  • ...Dispositifs MEMS RF 13 latérale est présenté par Tang [24]....

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  • ...13 latérale est présenté par Tang [24]....

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Proceedings ArticleDOI
12 Jun 2012
TL;DR: A simulation-based particle swarm optimization (PSO) approach is developed to optimize the operational parameters of a 15.12 GHz single pole double throw (SPDT) switch and results show that the proposed component values of SPDT switch is manage to fulfill the required specifications.
Abstract: In this paper, a simulation-based particle swarm optimization (PSO) approach is developed to optimize the operational parameters of a 15.12 GHz single pole double throw (SPDT) switch. The Agilent Advance Design System (ADS) is used to synthesize the performance of the switch design while PSO is employed as the optimizer for achieving the required switch performance. The performance of the designed SPDT switch is assessed in terms of insertion loss and isolation. Simulation results show that the proposed component values of SPDT switch is manage to fulfill the required specifications, achieving 25.978dB of isolation loss and 3.077dB of insertion loss.

1 citations

Book ChapterDOI
01 Jan 2010
Abstract: In this chapter, different types of single-pole-multiple-throw (SPMT) switching circuits are designed using a silicon-core metal-coated coplanar waveguide (CPW) transmission line and integrated lateral switches.

References
More filters
Book
01 Jan 2003
Abstract: From the Publisher: Practical and theoretical coverage of RF MEMS for circuits and devices New RF and microwave frequency MEMS (microeletromechanical systems) have potentially enormous and widespread applications in the telecommunications industry. Components based on this technology–such as switches, varactors, and phase shifters–exhibit virtually no power consumption or loss, making them ideally suited for use in modern telecommunications and wireless devices. This book sets out the basics of RF MEMS and describes how to design practical devices and circuits. As well as covering fundamentals, Gabriel Rebeiz offers expert tips for designers and presents a range of real-world applications. Throughout, the author utilizes actual engineering examples to illustrate basic principles in theory and practice. Detailed discussion of cutting-edge fabrication and packaging techniques is provided. Suitable as a tutorial for electrical and computer engineering students, or as an up-to-date reference for practicing circuit designers, RF MEMS provides the most comprehensive available survey of this new and important technology. Author Biography: Gabriel M. Rebeiz received his PhD from the California Institute of Technology, and is Professor of Electrical and Computer Engineering at the University of Michigan, Ann Arbor. In 1991 he was the recipient of the National Science Foundation Presidential Young Investigator Award, and in 2000 was the corecipient of the IEEE Microwave Prize. A Fellow of the IEEE and a consultant to Rockwell, Samsung, Intel, Standard MEMS, and Agilent, he has published extensively in the field of microwave technology and in the area of RF MEMS.

1,860 citations

Journal ArticleDOI
Abstract: This paper reviews the recent progress in MEMS for radio frequency (RF) applications from a device perspective. RF MEMS devices reviewed include switches and relays, tunable capacitors, integrated inductors, mechanical resonators and filters, and some representative microwave and millimetre-wave components. Important device parameters are highlighted, as they have significant contributions to the performance of the final products in which the devices are used. The challenges and statuses of these RF MEMS devices are outlined and discussed. The intent of this topical review is to provide perspective to newcomers in the field, and empower potential end-users with an overall device picture, current status, and a vision of their ultimate performance capabilities.

539 citations


"A Low-Loss Single-Pole-Double-Throw..." refers background in this paper

  • ...Radio frequency microelectromechanical systems (RF MEMS) can significantly reduce the size, weight, loss and power dissipation of RF components and exhibit a high potential in these areas [ 1-3 ]....

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MonographDOI
25 Oct 2002
Abstract: Preface. Microelectromechanical Systems (MEMS) and Radio Frequency MEMS. MEMS Materials and Fabrication Techniques. RF MEMS Switches and Micro Relays. MEMS Inductors and Capacitors. Micromachined RF Filters. Micromachined Phase Shifters. Micromachined Transmission Lines and Components. Micromachined Antennae. Integration and Packaging for RF MEMS Devices. Index.

339 citations

Journal ArticleDOI
Abstract: Two novel lateral metal-contact radio-frequency microelectromechanical system (RF MEMS) switches are reported. These switches are implemented with quasi-finite ground coplanar waveguide (FGCPW) configuration and actuated by applying electrostatic force on a high-aspect-ratio cantilever beam. It is demonstrated that the insertion loss of the switch is less than 0.2 dB up to 15 GHz and the isolation is higher than 20 dB up to 25 GHz. An RF model of the switches is used to analyse the effects of the switch design parameters and RF performance. The optimization of the switch mechanical design is discussed where the threshold voltage can be lower than 25 V. The lateral switches are fabricated by deep reactive ion etching (DRIE) process on a silicon-on-insulator (SOI) wafer with shadow mask technology.

58 citations