Journal ArticleDOI
A model to study the effect of selective anodic oxidation on ultrathin gate oxides
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TLDR
In this paper, the effect of selective anodic oxidation on ultrathin (22-31 /spl Aring/) silicon dioxide grown at different temperatures ranging from 600/spl deg/C to 875/spl Deg/C, on both p-and n-type substrates was studied.Abstract:
We have studied the effect of selective anodic oxidation on ultrathin (22-31 /spl Aring/) silicon dioxide grown at different temperatures ranging from 600/spl deg/C to 875/spl deg/C, on both p- and n-type substrates. A model based on the concept of filling of pinholes by selective anodic oxidation is presented to quantitatively explain the reduction in the gate leakage current of the MOS capacitors after selective anodic oxidation.read more
Citations
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Optimisation of ac anodisation parameters for the improvement of electrical properties of thermally grown ultrathin gate oxide
TL;DR: In this article, the effect of selective anodisation under ac bias on ultrathin (1.5-2.75-nm) silicon dioxide grown at two different temperatures, viz. 700 and 800°C, has been studied.
Journal ArticleDOI
Improvement in the interfacial properties and electrical characteristics of ultrathin SiO2 by selective AC anodisation
TL;DR: In this article, the effect of selective anodisation under ac bias on ultrathin (2.75 nm) silicon dioxide grown at 800°C was studied and it was shown that ac anodization is more effective in improving the electrical properties of the ultrathsin oxide compared to selective anodicisation carried out under dc condition.
Journal ArticleDOI
Structural characterisation of anodic SiO2 thin films on n-type Si
TL;DR: In this paper, the results of anodic silicon dioxide (SiO2) thin film on n-type silicon substrate have been presented, where a mixture of nitric acid and deionised water has been used as the electrolyte for the anodisation process.
References
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Journal ArticleDOI
Hole injection SiO/sub 2/ breakdown model for very low voltage lifetime extrapolation
K.F. Schuegraf,Chenming Hu +1 more
TL;DR: In this paper, a model for silicon dioxide breakdown characterization, valid for a thickness range between 25 /spl Aring/ and 130 /spl Ring/, is presented, which provides a method for predicting dielectric lifetime for reduced power supply voltages and aggressively scaled oxide thicknesses.
Journal ArticleDOI
Behavior of the Si/SiO2 interface observed by Fowler-Nordheim tunneling
J. Maserjian,N. Zamani +1 more
TL;DR: In this paper, the authors show that after tunnel injection of 1017 −5×1018 electrons/cm2, the barrier undergoes significant degradation leading to enhanced tunneling conductance, with reproducible behavior observed among different samples.
Journal ArticleDOI
Direct extraction of the electron tunneling effective mass in ultrathin SiO2
TL;DR: In this article, an effective mass for the tunneling electron in the SiO2 layer was extracted from the thickness dependence of the direct tunneling current between an applied voltage of 0 and 2 V, a bias range that has not been previously explored.
Journal ArticleDOI
Kinetics of Thermal Growth of Ultra‐Thin Layers of SiO2 on Silicon I . Experiment
TL;DR: In this article, the rate of formation of very thin films thermally grown on [111] and [100] oriented silicon wafers was studied using ellipsometry to measure oxide thickness.
Journal ArticleDOI
Void formation on ultrathin thermal silicon oxide films on the Si(100) surface
TL;DR: In this article, the formation of voids on the thermally grown (650 °C) ultrathin (∼1 nm) silicon oxide films on the Si(100) surface was investigated by using ultrahigh vacuum scanning tunneling microscopy.