Proceedings ArticleDOI
A New Charge based Compact Model for Lateral Asymmetric MOSFET and its application to High Voltage MOSFET Modeling
Yogesh Singh Chauhan,Francois Krummenacher,Renaud Gillon,Benoit Bakeroot,Michel Declercq,Adrian M. Ionescu +5 more
- pp 177-182
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TLDR
A new charge based analytical compact model for lateral asymmetric MOSFET (LAMOS) is reported, which shows good results in DC and most importantly in AC regime, especially the peaks in CGD, COS and CGG capacitances.Abstract:
The lateral asymmetric MOSFET, which has longitudinal doping variation in the channel, is the building block of many categories of high voltage MOSFETs e.g. LDMOS, VDMOS. Here we report a new charge based analytical compact model for lateral asymmetric MOSFET (LAMOS). Numerical device simulations are used to validate the intrinsic MOS region of high voltage MOSFET for lateral doping gradient in the channel. The model shows good results in DC and most importantly in AC regime, especially the peaks in CGD, COS and CGG capacitances. The LAMOS model is also validated along with the drift model on the measured DC characteristics of high voltage LDMOS transistorread more
Citations
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Compact modeling of high voltage MOSFETs
TL;DR: In this paper, a general high voltage MOSFET model is presented for the first time, which can be used for any high voltage device with extended drift region and a novel partitioning scheme is developed and validated on the device simulation.
Book ChapterDOI
Modeling of High Voltage MOSFETs Based on EKV (HV-EKV)
TL;DR: In this paper, the authors proposed a modeling strategy for HVMOS transistors (HV-EKV) based on the scalable drift resistance and the use of charge based EKV2.6 MOSFET model as a core for the intrinsic MOS channel.
Proceedings ArticleDOI
Analysis and Compact Modeling of Drain-Extended FinFET
TL;DR: In this article, a comprehensive simulation and the compact model of drain extended FinFET for high power application is presented and validated with TCAD simulations and can be used for high-power circuit simulations.
Book ChapterDOI
Compact Modeling of Drain-Extended MOS Transistor Using BSIM-BULK Model
TL;DR: The charge based compact model for Drain-Extended MOS (DEMOS) transistor accurately predicts the special effects of quasi-saturation, present in high voltage MOSFETs and low voltage BSIM-BULK model.
References
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An analytical MOS transistor model valid in all regions of operation and dedicated to low-voltage and low-current applications
TL;DR: In this article, a fully analytical MOS transistor model dedicated to the design and analysis of low-voltage, low-current analog circuits is presented, which exploits the inherent symmetry of the device by referring all the voltages to the local substrate.
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High Voltage Devices and Circuits in Standard CMOS Technologies
Hussein Ballan,Michel Declercq +1 more
TL;DR: The High Voltage Devices and Circuits in Standard CMOS Technologies (HVDC) as discussed by the authors is a survey of high voltage devices and circuits in standard CMOS technologies, where high voltage (HV) is defined as any voltage higher than the nominal (low) voltage.
Journal ArticleDOI
Self-heating characterization and extraction method for thermal resistance and capacitance in high voltage MOSFETs
TL;DR: In this article, a simple pulsed-gate experiment is proposed and the influence of its parameters (pulse duration and duty factor) are analyzed, and it is demonstrated that in our 100 V DMOSFET, SHE is cancelled by using pulses with duration less than 2 /spl mu/s and duty factors lower than 1:100.