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Journal ArticleDOI

A New Simulation Approach of Transient Response to Enhance the Selectivity and Sensitivity in Tunneling Field Effect Transistor-Based Biosensor

TL;DR: In this paper, a simulation approach of transient analysis on single cavity dielectric-modulated (DM) ${p}$ -type of tunnel field effect transistor (TFET) is examined for biosensing applications.
Abstract: In this work, a new simulation approach of transient analysis on single cavity dielectric-modulated (DM) ${p}$ -type of tunnel field-effect transistor (TFET) is examined for biosensing applications. The device operation and performance are investigated using the 2D device simulator and results are well-calibrated with experimental data. In this work, we have examined DC transfer characteristics, the transient response of drain current, drain current sensitivity ( ${S}$ ), and selectivity ( $\Delta {S}$ ). Focussing more on the transient results, we have obtained maximum sensitivity of orders greater than 108 for APTES biomolecule with respect to air and a significant selectivity value in orders of 103 for APTES with respect to Biotin biomolecule. The performance of the device in terms of selectivity can be further improved (~104) by optimizing the back-gate bias, and therefore, the impact of back-gate bias has been analysed. The results for charged biomolecules and partially filled cavity are further investigated & highlighted. The DM ${p}$ -TFET biosensor shows a significant improvement in the results with the transient response for biosensing applications with the feasibility of operating at low voltages (gate voltage of −2.0 V, drain voltage of −0.5 V and back gate voltage 0 to 0.5 V).
Citations
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Journal ArticleDOI
TL;DR: The development of a compact GaN high-electron-mobility transistor (HEMT) based biosensor for an easy and early detection of breast cancer biomarker C-erbB2 in the human cell line is reported on.
Abstract: This work reports on the development of a compact GaN high-electron-mobility transistor (HEMT) based biosensor for an easy and early detection of breast cancer biomarker C-erbB2 in the human cell line. The early-stage detection process includes a reaction of antibody-antigen through the cell line culture of a patient. The developed sensing chip has a two-finger gate structure of 125 µm gate width, and a gate length of 5 µm. In order to functionalize the gold surface of the fabricated sensor, the sensor chip has been immersed into an optimized 1 M aqueous solution of thioglycolic acid at room temperature for 15 h. Various characterization methods such as I–V, EDS, and FTIR confirm the formation of the Au–S complex. The functionalized sensors have been incubated in phosphate buffer saline solution of 200 µg ml−1 C-erbB2 monoclonal antibody for 4 h. Thereafter, the C-erbB2 monoclonal antibody conjugated devices are incubated with human cancer cells positive for C-erbB2 on its cell surface. The biosensor shows a 31% change in drain current for an incubation period of 6 h. The high-resolution biosensing chip (in terms of high drain current levels of the order of mA) is unaffected by noise and eases the circuit for futuristic point of care diagnostics.

10 citations


Cites methods from "A New Simulation Approach of Transi..."

  • ...The sensitivity of the developed biosensor can be defined as a relative ration of drain current and is given by equation following equation [42, 43]...

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Journal ArticleDOI
TL;DR: In this article , the authors demonstrate the realization of L-Shaped Schottky Barrier FET as a biosensing device with improved sensitivity, which uses dual material gate with work functions of 4.2 eV and 4.8 eV (Cu) and Hafnium Oxide (HfO2) as the gate dielectric.
Abstract: In this work, we demonstrate the realization of L-Shaped Schottky Barrier FET as a biosensing device with improved sensitivity. The proposed device uses dual material gate with work functions of 4.2 eV (Al) and 4.8 eV (Cu) and Hafnium Oxide (HfO2) as the gate dielectric. In order to detect the biomolecule, a nano-gap cavity is created in the vertical gate (Gate1) by etching out the oxide. The electrical characteristics of biomolecules such as dielectric constant and charge density modulate the Schottky Barrier width, which in turn, changes the drive current of the device. Various sensitivity parameters have been thoroughly investigated at [Formula: see text] and a comparative analysis with the conventional device has been performed. The results so obtained reveal that [Formula: see text] sensitivity of the proposed device is much better for both neutral as well as charged biomolecules (maximum of 21x for neutral, at K = 12; 20x for charged biomolecules at ρ = -5×10 10cm-2, at K = 12). Besides this, the [Formula: see text] sensitivity, transconductance ( [Formula: see text]) sensitivity and selectivity show similar improvements. Further, the proposed device shows better sensitivity performance at low as well as at higher temperatures as compared to the state-of-the-art biosensing devices.

5 citations

Journal ArticleDOI
TL;DR: In this article , two nano-cavities are carved in the cladding layers to be filled by biomolecules, which modulates the density of the charge carriers and energy band diagram of the source.
Abstract: In this paper, we introduce a novel dielectric modulated TFET-based biosensor that uses the cladding layer concept to induce holes in an intrinsic Ge source region. Two nano-cavities are carved in the cladding layers to be filled by biomolecules. Since the proposed device is a doping-less structure, the presence of different biomolecules in the cavities modulates the density of the charge carriers and energy band diagram of the source and impacts on the sensor characteristics. The sensor characteristics and its sensitivity and selectivity are investigated by a calibrated simulation framework. The proposed fabrication process of this biosensor is fully compatible with CMOS technology. We achieve a remarkable sensing performance at low operating voltages, which makes the proposed biosensor a promising candidate for ultra-low power applications.

4 citations

Journal ArticleDOI
TL;DR: In this article , a gate dielectric modulated SOI TFET for biological sensing applications is proposed, which uses InSb/Si heterojunction with N+ pocket at drain channel junction.

3 citations

References
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Journal ArticleDOI
17 Nov 2011-Nature
TL;DR: Tunnels based on ultrathin semiconducting films or nanowires could achieve a 100-fold power reduction over complementary metal–oxide–semiconductor transistors, so integrating tunnel FETs with CMOS technology could improve low-power integrated circuits.
Abstract: Power dissipation is a fundamental problem for nanoelectronic circuits. Scaling the supply voltage reduces the energy needed for switching, but the field-effect transistors (FETs) in today's integrated circuits require at least 60 mV of gate voltage to increase the current by one order of magnitude at room temperature. Tunnel FETs avoid this limit by using quantum-mechanical band-to-band tunnelling, rather than thermal injection, to inject charge carriers into the device channel. Tunnel FETs based on ultrathin semiconducting films or nanowires could achieve a 100-fold power reduction over complementary metal-oxide-semiconductor (CMOS) transistors, so integrating tunnel FETs with CMOS technology could improve low-power integrated circuits.

2,390 citations


"A New Simulation Approach of Transi..." refers background in this paper

  • ...In the past, a DM tunnel field-effect transistor (TFET) biosensors [16]–[21] based on tunneling of inter bands carriers [16]–[28] are drawing more attention as it offers higher sensitivity, higher immunity to short- channel effect, and lower power switching in comparison to conventional FET biosensors....

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  • ...In TFET, ambipolar conduction at the drain to channel junction can be reduced by using the asymmetric doping of source and drain (source should be heavily doped and drain lightly doped) and using the underlap region at the drain to channel junction [24], [28]....

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Journal ArticleDOI
25 Oct 2010
TL;DR: This review introduces and summarizes progress in the development of the tunnel field- effect transistors (TFETs) including its origin, current experimental and theoretical performance relative to the metal-oxide-semiconductor field-effect transistor (MOSFET), basic current-transport theory, design tradeoffs, and fundamental challenges.
Abstract: Steep subthreshold swing transistors based on interband tunneling are examined toward extending the performance of electronics systems. In particular, this review introduces and summarizes progress in the development of the tunnel field-effect transistors (TFETs) including its origin, current experimental and theoretical performance relative to the metal-oxide-semiconductor field-effect transistor (MOSFET), basic current-transport theory, design tradeoffs, and fundamental challenges. The promise of the TFET is in its ability to provide higher drive current than the MOSFET as supply voltages approach 0.1 V.

1,389 citations

Journal ArticleDOI
Evan O. Kane1
TL;DR: In this paper, the Zener current in a constant field is calculated both with and without the W annier -A dams reduction of the interband-coupling terms, interpreted as a polarization correction.

847 citations


"A New Simulation Approach of Transi..." refers methods in this paper

  • ...the Kane model [33] to allow local band-to-band tunneling as well as to analyze the performance of p-TFET biosensor using following models: i) Fermi-Dirac statistics, ii) Shockley– Read–Hall (SRH) process, iii) bandgap narrowing, doping and iv) field-dependent mobility models....

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Journal ArticleDOI
12 Mar 2014-ACS Nano
TL;DR: This paper introduces and demonstrates FET biosensors based on molybdenum disulfide (MoS2), which provides extremely high sensitivity and at the same time offers easy patternability and device fabrication, due to its 2D atomically layered structure.
Abstract: Biosensors based on field-effect transistors (FETs) have attracted much attention, as they offer rapid, inexpensive, and label-free detection. While the low sensitivity of FET biosensors based on bulk 3D structures has been overcome by using 1D structures (nanotubes/nanowires), the latter face severe fabrication challenges, impairing their practical applications. In this paper, we introduce and demonstrate FET biosensors based on molybdenum disulfide (MoS2), which provides extremely high sensitivity and at the same time offers easy patternability and device fabrication, due to its 2D atomically layered structure. A MoS2-based pH sensor achieving sensitivity as high as 713 for a pH change by 1 unit along with efficient operation over a wide pH range (3–9) is demonstrated. Ultrasensitive and specific protein sensing is also achieved with a sensitivity of 196 even at 100 femtomolar concentration. While graphene is also a 2D material, we show here that it cannot compete with a MoS2-based FET biosensor, which ...

837 citations


"A New Simulation Approach of Transi..." refers background or methods in this paper

  • ...distinguish the biomolecules for specific applications [1],...

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  • ...Selectivity is used to distinguish the types of biomolecules in the presence of various biomolecules [1]–[6]....

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  • ...THE field-effect transistors (FETs) biosensors have been used in various biosensing applications due to their several advantages [1]–[12]....

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Journal ArticleDOI
TL;DR: Silicon nanowire field-effect transistors (SiNW-FETs) have recently drawn tremendous attention as a promising tool in biosensor design because of their ultrasensitivity, selectivity, and label-free and real-time detection capabilities.

596 citations