A new sturcture AlGaN/GaN HEMT
01 Nov 2015-pp 157-159
TL;DR: In this paper, a new structure of GaN HEMT called different-surface-gate structure was described, which drain and source electrodes are on the other surface while the gate electrode is on the top surface (AlGaN surface) of the device as normal HEMTs.
Abstract: In several decades, the world has witnessed various dramatic changes since applying of semiconductor. The performance requirements of semiconductor products are continue increasing while the technology is improving. In order to satisfy the requirements, the researches of new material and device structure is necessary. This paper shows a new structure of GaN HEMT. An AlGaN/GaN HEMT consists of AlGaN/GaN Heterojunction, drain electrode, source electrode and gate electrode. Though the researchers have reported a large number of HEMT structures since M. Asif Khan and his colleagues repot the first AlGaN/GaN HEMT in 1993, there is none of the structures, which three electrodes are in different surfaces of device. This paper describes a new structure called different-surface-gate structure, which drain and source electrodes are on the other surface while the gate electrode is on the top surface (AlGaN surface) of the device as normal HEMTs. This paper will establish two models by TCAD simulation software. One is the model of different-surface-gate AlGaN/GaN HEMT and the other one is normal structure AlGaN/GaN HEMT, which is the control model. After building the models, the compare of the models will show the saturation current of the different-surface-gate model is 120% as large as it of the other model.
Citations
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01 Jan 2019
TL;DR: In this article, a 2DEG (2-Dimentional Electron Gas) structure of a Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) and compared it with a conventional structure.
Abstract: In this work we introduced 2DEG (2-Dimentional Electron Gas) structure of a Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) and compared it with a conventional structure. 2DEG structure is a heterostructure which is formed by combination of group III-IV elements. Our proposed GaN HEMT can be employed for high speed, high power, and high voltage applications. For high power applications we used SOD (Silicon-On-Diamond) technology to transfer heat to the substrate. This research paper will present design of two models using SILVACO TCAD device simulation software. One is the design of 2DEG structure and another one is the conventional structure of Aluminium Gallium Nitride/Gallium Nitride (AlGaN/GaN) HEMT.
2 citations
Cites background from "A new sturcture AlGaN/GaN HEMT"
...To satisfy the need for high-performance demand, researchers have to discover novel materials and invent different device structures [6]....
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01 Nov 2018
TL;DR: Differential conductance of submicron HEMT is analytically investigated as a function of drain bias for different structural parameters and parasitic effects in this article, where simulation is carried out for two different substrate based devices, Si and sapphire, and comparative study for those structural parameters at which V GS provides maximum transconductance.
Abstract: Differential conductance of submicron HEMT is analytically investigated as a function of drain bias for different structural parameters and parasitic effects. Simulation is carried out for two different substrate based devices, Si and sapphire, and comparative study is carried out for those structural parameters at which V GS provides maximum transconductance. Poisson's equation and carrier density equations are simultaneously solved to get drain current variations and parasitic effects are invoked through boundary conditions for realistic results. Result speaks that effect of threshold voltage is negligible on sapphire based device over a wider range of horizontal bias. Nanometric channel length provides almost constant conductance profile with insignificant magnitude.
2 citations
Cites result from "A new sturcture AlGaN/GaN HEMT"
...Different-surface-gate HEMT structure is recently proposed to obtain 120% high saturation current [15] compared to the existing models....
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01 Mar 2019
TL;DR: In this paper, a comparative study of DSG-MOSFET and normal MOS-FET was performed and the performance was analyzed in terms of crack length and current mobility.
Abstract: AlGaN/GaN-based DSG-MOSFET is upcoming model of MOSFET. In this paper, comparative study of DSG-MOSFET $\mathrm{V}_{\mathrm{s}}$ normal MOSFET and analyzed the performance of DSG-MOSFET. The main features of it are there is negotiable barrier between source and drain so current moves more freely and current is more than normal MOSFET. As if current is more than normal MOSFET then crack length is minimum in DSG-MOSFET.
References
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07 Nov 2002
TL;DR: This paper attempts to present the status of the technology and the market with a view of highlighting both the progress and the remaining problems of the AlGaN/GaN high-electron mobility transistor.
Abstract: Wide bandgap semiconductors are extremely attractive for the gamut of power electronics applications from power conditioning to microwave transmitters for communications and radar. Of the various materials and device technologies, the AlGaN/GaN high-electron mobility transistor seems the most promising. This paper attempts to present the status of the technology and the market with a view of highlighting both the progress and the remaining problems.
1,849 citations
"A new sturcture AlGaN/GaN HEMT" refers background in this paper
...GaN HEMT Gallium nitride, which is one of the new semiconductor materials, has many advantages, such as high electron mobility, high breakdown voltage and high frequency, because of AlGaN/GaN heterojunction and wide bang gap[1]....
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TL;DR: In this article, the authors report the fabrication and dc characterization of a high electron mobility transistor (HEMT) based on a n−GaN−Al0.86N heterojunction.
Abstract: In this letter we report the fabrication and dc characterization of a high electron mobility transistor (HEMT) based on a n‐GaN‐Al0.14Ga0.86N heterojunction. The conduction in our low pressure metalorganic chemical vapor deposited heterostructure is dominated by two‐dimensional electron gas at the heterostructure interface. HEMT devices were fabricated on ion‐implant isolated mesas using Ti/Au for the source drain ohmic and TiW for the gate Schottky. For a device with a 4 μm gate length (10 μm channel opening, i.e., source‐drain separation), a transconductance of 28 mS/mm at 300 K and 46 mS/mm at 77 K was obtained at +0.5 V gate bias. Complete pinchoff was observed for a −6 V gate bias.
799 citations
22 Jun 2005
TL;DR: In this article, a novel vertical structure of Ni/n-GaN Schottky barrier diode (SBD) with metallic substrate employing nickel electroplating and laser lift-off (LLO) processes is proposed and its electrical characteristics is reported.
Abstract: For the past decade, most of vertical device applications of GaN were processed by either wafer bonding or direct epitaxy on SiC or GaN wafer. However, the former usually suffers from large strain between GaN and bonding wafer because the high temperature and high pressure bonding process, and the later is not cost effective because of using SiC or GaN substrate. In this work, a novel vertical structure of Ni/n-GaN Schottky barrier diode (SBD) with metallic substrate employing nickel electroplating and laser lift-off (LLO) processes is proposed and its electrical characteristics is reported
2 citations
"A new sturcture AlGaN/GaN HEMT" refers methods in this paper
...The substrate of the wafer is removed by laser-lift-off or etch, which has be used to make GaN vertical Schottky barrier diode[3]....
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