A novel nonvolatile memory with spin torque transfer magnetization switching: spin-ram
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Cites background from "A novel nonvolatile memory with spi..."
...Companies have already presented several demonstrations of 'spin-RAM...
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Cites methods from "A novel nonvolatile memory with spi..."
...1) MOS-Accessed Cell: MOS-accessed cell corresponds to the typical 1-transistor-1-resistor (1T1R) structure used by many NVM chips [12], [24]–[29], in which a NMOS access device is connected in series with the nonvolatile storage element (i....
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921 citations
Cites background from "A novel nonvolatile memory with spi..."
...Since that time, both FRAM and MRAM have proved to be less scalable than had been hoped[31], although the original MRAM concept has since been mostly replaced by the more promising Spin-Transfer Torque (STT-RAM)[248] and Racetrack memory[249] concepts....
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"A novel nonvolatile memory with spi..." refers methods in this paper
...Although STS is quite a new technology, which was predicted theoretically in 1996 (3, 4) and observed experimentally in 1998 ( 5 , 6), and should need more fundamental investigations for understanding the detail, we decided to fabricate the Spin-RAM to show by means of evidence that the Spin-RAM has been equipped with distinguished properties as follows....
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490 citations