A Novel Trench-Gated Power MOSFET With Reduced Gate Charge
Citations
16 citations
Cites background from "A Novel Trench-Gated Power MOSFET W..."
...gate and drain, then the gate coupling with the drain region is reduced and the gate–drain capacitance is reduced [26]....
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Cites background from "A Novel Trench-Gated Power MOSFET W..."
...[8] theoretically investigated the concept of replacing the active gate electrode with a polysilicon PN junction to reduce the gate charge QGD of the conventional single-gate trench MOSFETs....
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Cites background from "A Novel Trench-Gated Power MOSFET W..."
...5% Switching delay decreases without changing Ron [14] Trench MOS 2010 ] Jacky C....
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References
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"A Novel Trench-Gated Power MOSFET W..." refers background in this paper
...Then the W-shaped gate trench structure [6], [7] is proposed to overcome this drawback....
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"A Novel Trench-Gated Power MOSFET W..." refers methods in this paper
...FOR the power trench MOSFETs (UMOSFETs) used as switching devices or DC-to-DC converters, it is extremely crucial to obtain the higher switching speed by reducing gate-drain charge (Qgd), due to the presence of the trench bottom which makes the gate coupling with drain more than the planar devices [1]–[3]....
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