Search or ask a question
Pricing
Login
Sign up
Home
Notebook
BETA
Literature Review
Copilot
Citation generator
Paraphraser
AI Detector
Chrome Extension
Talk with us
Use on ChatGPT
All figures (9)
Fig. 5. Variations of πΌππ, SS and πππ(πΌππ/πΌππΉπΉ) with respect to device width.
Fig. 6. (a) Contribution of different regions to the total on-resistance (RON) of the device. Variation of on-resistance with respect to (b) channel length and (c) gate to drain length, where the gate to source length and the device width are kept fixed at 56 ππ and 10 ππ, respectively.
Fig. 8. Variation of the drain current and tunnel distance with respect to gate bias for a conventional TFET in Si and a heterojunction TFET in GaN.
Fig. 7. Comparison of the band diagram in ON and OFF states of (a) a conventional TFET on Si and (b) a heterojunction TFET on GaN.
Fig. 1. Simulated energy band diagram of (a) a vertical p-n junction in GaN (inset) and (b) p-n junction with AlN barrier (inset), where the doping density in each n- or p- type region is 3 Γ 1019ππβ3. The polarization charge at the AlN/GaN interface helps reduce the depletion width to facilitate tunneling.
TABLE I Summary of Parameters Used in the Simulations
Fig. 3 (a) shows a schematic diagram of the p-channel GaN HTFET with its vertical direction along [0001]. From the bottom to the top, the structure consists of a 56 ππ n-GaN source, 2 ππ AlN tunneling barrier, 15 ππ undoped GaN (u-
Fig. 2. (a) Schematic of a 56 Γ 56 ππ2 GaN Zener diode with a 2.8 nm AlN barrier layer sandwiched between p-GaN and n-GaN, (b) Comparison of our simulation model with the reported experiment data reported from [10] (Adapted from Fig. 3 (a) with permission from [10] Copyright (2009) by the American Physical Society). The inset shows the simulation results of on-current for different AlN thicknesses.
Fig. 4. Optimised (a) πΌπ·π β ππΊπ and (b) πΌπ·π β ππ·π characteristics for the cylindrical p-channel GaN HTFET with a 2 nm pocket and 1.7 nm AlN barrier layer. (c) Impact of traps and trap-assisted tunneling (TAT) on transfer characteristics.
Journal Article
β’
DOI
β’
A p-Channel GaN Heterostructure Tunnel FET With High ON/OFF Current Ratio
[...]
Ashwani Kumar
1
,
Maria Merlyne De Souza
1
β’
Institutions (1)
University of Sheffield
1
23 May 2019
-
IEEE Transactions on Electron Devices