Fig. 1. Simulated energy band diagram of (a) a vertical p-n junction in GaN (inset) and (b) p-n junction with AlN barrier (inset), where the doping density in each n- or p- type region is 3 Γ 1019ππβ3. The polarization charge at the AlN/GaN interface helps reduce the depletion width to facilitate tunneling.
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