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Fig. 8. Variation of the drain current and tunnel distance with respect to gate bias for a conventional TFET in Si and a heterojunction TFET in GaN.
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Journal Article
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DOI
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A p-Channel GaN Heterostructure Tunnel FET With High ON/OFF Current Ratio
[...]
Ashwani Kumar
1
,
Maria Merlyne De Souza
1
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Institutions (1)
University of Sheffield
1
23 May 2019
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IEEE Transactions on Electron Devices