A physically based mobility model for numerical simulation of nonplanar devices
Citations
442 citations
Additional excerpts
...Different device simulators use different models for the field-dependent mobility of the channel inversion layer [ 15 ], [16]....
[...]
367 citations
324 citations
179 citations
Cites background or methods from "A physically based mobility model f..."
...What is needed is a mobility model that depends only on local quantities, and is applicable throughout a general device structure [5], [6]....
[...]
...This is taken into account here by adopting a similar formulation to that of Lombardi [5], which follows the approximation suggested by Schwarz and Russek [12]....
[...]
...To evaluate the carrier mobility we use the Mathiessen rule that approximates the local mobility, , at low longitudinal field as the sum of three terms [5]...
[...]
...In previously published local mobility models [2], [5], [6], [8] the dependence on the transverse field has the form...
[...]
..., where is the temperature dependence of the probability of surface phonon scattering, as discussed in [12], and is an empirical parameter fit to measurements [5]....
[...]
158 citations
References
2,550 citations
1,067 citations
"A physically based mobility model f..." refers background in this paper
...The temperature dependence of U, is assumed to be the same as in bulk silicon [ 17 ]....
[...]
...Accordingly, we assumed Tinit = 2.42 as an initial estimate for y [ 17 ]....
[...]
987 citations
908 citations
610 citations