Journal ArticleDOI
A process-parameter-based circuit simulation model for ion-implanted MOSFETs and MESFETs
Shreepad Karmalkar,K.N. Bhat +1 more
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TLDR
In this article, a correct-equivalent-box representation of implanted doping profiles, derived in terms of the process parameters by matching the chargevoltage relationships of the actual profile and the box profile, can be used for accurately simulating the electric characteristics of surface-channel MOSFETs and MESFET having implanted channels.Abstract:
It is shown that the correct-equivalent-box representation of implanted doping profiles, derived in terms of the process parameters by matching the charge-voltage relationships of the actual profile and the box profile, can be used for accurately simulating the electric characteristics of surface-channel MOSFETs and MESFETs having implanted channels. Because the correct box representation is known directly in terms of the doping profile parameters, which can be obtained from process simulation, the need for experimental determination of the box is obviated. The application of the model can substantially reduce the number of experimental trial-and-error iterations involved in the development of devices and circuits. The correct box is also applicable to the CCDs whose physics of operation is similar to that of MOSFETs. >read more
Citations
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Journal ArticleDOI
An analytical threshold-voltage model of trench-isolated MOS devices with nonuniformly doped substrates
Steve S. Chung,Tzung-Lin Li +1 more
TL;DR: In this article, a simple closed-form expression of the threshold voltage is developed for trench-isolated MOS (TIMOS) devices with feature size down to the deep-submicrometer range.
Journal ArticleDOI
A new equivalent MOSFET representation of a HEMT to analytically model nonlinear charge control for simulation of HEMT devices and circuits
TL;DR: In this article, it was shown that the behavior of the charge and position of the 2-DEG as a function of gate-source and drain-source voltages can be regarded as a simple buried-channel (BC) MOSFET.
I. theory and practice
TL;DR: There has been considerable international research into the meanings, uses, and consumption of the past among various peoples around the world as discussed by the authors, which has been fuelled by the nationally oriented work of Pierre Nora and David Lowenthal, among others.
Journal ArticleDOI
The shifted-rectangle approximation for simplifying the analysis of ion-implanted MOSFETs and MESFETs
Shreepad Karmalkar,K.N. Bhat +1 more
TL;DR: In this article, a shifted-rectangle approximation (SRA) was proposed to obtain a quadratic function of the gate controlled depletion charge for the V d -Q d characteristics of implanted FETs.
Journal ArticleDOI
Simple unified elucidations of some semiconductor device phenomena
TL;DR: In this paper, the authors elucidate unified perspectives of the topics, namely, semiclassical carrier transport in the bulk of a semiconductor and the capacitance of a p-n junction, clarifying the unifying features of drift, diffusion and thermoelectric currents in the former, and of the depletion and diffusion capacitances in the latter.
References
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Journal ArticleDOI
Graded channel FET's: Improved linearity and noise figure
R.E. Williams,D.W. Shaw +1 more
TL;DR: In this article, the characteristics of GaAs field-effect transistors were examined as a function of the channel doping profile in the direction perpendicular to the surface, and theoretical considerations predict that improved device linearity is expected for channel doping profiles with relatively low carrier concentrations near the surface.
Journal ArticleDOI
A device model for an ion-implanted MESFET
TL;DR: In this paper, a model is developed for an ion-implanted MESFET device in terms of the range and straggle parameters of the Gaussian profile and reasonable approximations are introduced to obtain a closed-form solution for the linear and triode regions of operation.
Journal ArticleDOI
Analytical models of ion-implanted GaAs FET's
Tzu-Hung Chen,M.S. Shur +1 more
TL;DR: In this article, analytical models for the calculation of the currentvoltage characteristics of ion-implanted GaAs FET's are presented. But the results of the calculation are in good agreement with experimental data.
Journal ArticleDOI
The correct equivalent box representation for the buried layer of BC MOSFET's in terms of the implantation parameters
TL;DR: In this article, the Gaussian-implanted profile of buried layers can be represented by an equivalent box and the average doping and the depth of this box can be obtained directly from a knowledge of the implantation parameters.
Journal ArticleDOI
On-line extraction of model parameters of a long buried-channel MOSFET
TL;DR: In this paper, the authors proposed a method of deriving the necessary model parameters through the measurement of a single device parameter, namely drain conductance under different operating conditions, which can be used to predict the best box for the profile and give other model parameters necessary for circuit simulation.