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A review of micro-contact physics for microelectromechanical systems (MEMS) metal contact switches

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TLDR
In this article, a review of the important characteristics of the contact interface such as modeling and material choice is discussed. And a brief comparison of actuation methods is provided to show why electrostatic actuation is most commonly used by radio frequency microelectromechanical systems designers.
Abstract
Innovations in relevant micro-contact areas are highlighted, these include, design, contact resistance modeling, contact materials, performance and reliability. For each area the basic theory and relevant innovations are explored. A brief comparison of actuation methods is provided to show why electrostatic actuation is most commonly used by radio frequency microelectromechanical systems designers. An examination of the important characteristics of the contact interface such as modeling and material choice is discussed. Micro-contact resistance models based on plastic, elastic-plastic and elastic deformations are reviewed. Much of the modeling for metal contact micro-switches centers around contact area and surface roughness. Surface roughness and its effect on contact area is stressed when considering micro-contact resistance modeling. Finite element models and various approaches for describing surface roughness are compared. Different contact materials to include gold, gold alloys, carbon nanotubes, composite gold-carbon nanotubes, ruthenium, ruthenium oxide, as well as tungsten have been shown to enhance contact performance and reliability with distinct trade offs for each. Finally, a review of physical and electrical failure modes witnessed by researchers are detailed and examined.

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Citations
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A soft landing waveform for actuation of a single-pole single- throw ohmic RF MEMS Switch.

TL;DR: In this article, a soft-landing actuation waveform was designed to reduce the bounce of a single-pole single-throw (SPST) ohmic radio frequency (RF) microelectromechanical systems (MEMS) switch during actuation.
Journal ArticleDOI

Nanoelectromechanical Switches for Low-Power Digital Computing

TL;DR: Recent progress toward scaled relay technology can overcome the energy-efficiency limit of CMOS technology is reviewed, providing an overview of the different relay designs and experimental results achieved by various research groups, as well as of relay-based IC design principles.
Journal ArticleDOI

A micro contact model for electrical contact resistance prediction between roughness surface and carbon fiber paper

TL;DR: In this paper, an analytical model for ECR between solid material and porous material, for example, which could be used to predict power loss between carbon fiber paper and bipolar plate in the fuel cell.

Electrical contact resistance degradation of a hot-switched simulated metal MEMS contact.

TL;DR: In this paper, a simulated gold-platinum metal microelectromechanical system contact was hot-switched to determine the sensitivity of the contact resistance degradation to current level and environment, and the mechanism responsible for resistance degradation was found to be arc-induced decomposition of adsorbed surface contaminants.
References
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Understanding Molecular Simulation

Daan Frenkel, +1 more
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Contact of Nominally Flat Surfaces

TL;DR: In this article, the authors proposed a new theory of elastic contact, which is more closely related to real surfaces than earlier theories, and showed how the contact deformation depends on the topography of the surface, and established the criterion for distinguishing surfaces which touch elastically from those which touch plastically.
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Advances in the science and technology of carbon nanotubes and their composites: a review

TL;DR: A review of recent advances in carbon nanotubes and their composites can be found in this article, where the authors examine the research work reported in the literature on the structure and processing of carbon Nanotubes.
Journal ArticleDOI

General Relationship for the Thermal Oxidation of Silicon

TL;DR: In this paper, the thermaloxidation kinetics of silicon are examined in detail based on a simple model of oxidation which takes into account the reactions occurring at the two boundaries of the oxide layer as well as the diffusion process, the general relationship x02+Ax0=B(t+τ) is derived.
Book

RF MEMS: Theory, Design, and Technology

TL;DR: In this paper, the basics of RF MEMS and how to design practical devices and circuits are discussed, as well as expert tips for designers and a range of real-world applications.
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