A review of recent MOSFET threshold voltage extraction methods
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"A review of recent MOSFET threshold..." refers background or methods in this paper
...The extraction of VT in non-crystalline MOSFETs is more conveniently performed from the drain current in saturation, considering that these devices present much smaller drain currents than conventional single-crystal bulk devices....
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...The drain current, neglecting parasitic series resistance, is modeled by ID ¼ Gd Vg VT 1þ h Vg VT ; ð12Þ where Gd ðW =LeffÞlCoVd is a constant of the device with units of conductance, h is the mobility reduction factor due to the vertical electric field in the channel, and other parameters have…...
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...The threshold voltage value, which is the most important electrical parameter in modeling MOSFETs, can be ex- tracted from either measured drain current or capacitance characteristics, using a single or more transistors....
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...V methods have the disadvantage of requiring elaborate high-resolution equipment to measure the small capacitances present in MOSFETs, particularly in very small geometry state-of-art devices....
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...This method uses the sub-threshold-to-strong inversion transition region of the MOSFET’s transfer characteristics to extract the threshold voltage....
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"A review of recent MOSFET threshold..." refers methods in this paper
...The SD method [12], developed to avoid the dependence on the series resistances, determines VT as the gate voltage at which the derivative of the transconductance (i....
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...This article will review and scrutinize the following existing ID–Vg methods for extracting VT in single-crystal MOSFETs, biased in the linear region: (1) constantcurrent (CC) method, which defines VT as the gate voltage corresponding to a certain predefined practical constant drain current [1–6,10,11]; (2) extrapolation in the linear region (ELR) method, which finds the gate voltage axis intercept of the linear extrapolation of the ID–Vg characteristics at its maximum first derivative (slope) point [1–6]; (3) transconductance linear extrapolation (GMLE) method, which finds the gate voltage axis intercept of the linear extrapolation of the gm–Vg characteristics at its maximum first derivative (slope) point [19,20]; (4) second derivative (SD) method, which determines VT at the maximum of the SD of ID with respect to Vg [12]; (5) ratio method (RM), which finds the gate voltage axis intercept of the ratio of the drain current to the square root of the transconductance [13– 18]; (6) transition method [33]; (7) integral method [32]; (8) Corsi function method [21]; and (9) second derivative logarithmic (SDL) method, which determines VT at the minimum of the SD of logðIDÞ–Vg [31]; (10) linear cofactor difference operator [22] (LCDO) method, and (11) non-linear optimization [23,24]....
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"A review of recent MOSFET threshold..." refers background in this paper
...Other approaches to eliminate the influence of parasitic series resistances are based on measuring the ID–Vg transfer characteristics of various devices having different mask channel lengths [38,39], or on measuring several devices connected together [40,41]....
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