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A review of some charge transport properties of silicon
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In this article, the present knowledge of charge transport properties in silicon, with special emphasis on their application in the design of solid-state devices, is reviewed, and most attention is devoted to experimental findings in the temperature range around 300 K and to high-field properties.Abstract:
This paper reviews the present knowledge of charge transport properties in silicon, with special emphasis on their application in the design of solid-state devices. Therefore, most attention is devoted to experimental findings in the temperature range around 300 K and to high-field properties. Phenomenological expressions are given, when possible, for the most important transport quantities as functions of temperature, field or impurity concentration. The discussion is limited to bulk properties, with only a few comments on surface transport.read more
Citations
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Nanowire transistors without junctions
Jean-Pierre Colinge,Chi-Woo Lee,Aryan Afzalian,Aryan Afzalian,Nima Dehdashti Akhavan,Ran Yan,Isabelle Ferain,Pedram Razavi,B. O'Neill,Alan Blake,Mary White,Anne-Marie Kelleher,Brendan McCarthy,Richard Murphy +13 more
TL;DR: A new type of transistor in which there are no junctions and no doping concentration gradients is proposed and demonstrated, which has near-ideal subthreshold slope, extremely low leakage currents, and less degradation of mobility with gate voltage and temperature than classical transistors.
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Crystal Growth of the Perovskite Semiconductor CsPbBr3: A New Material for High-Energy Radiation Detection
Constantinos C. Stoumpos,Christos D. Malliakas,John A. Peters,Zhifu Liu,Maria Sebastian,Jino Im,Thomas C. Chasapis,Arief Wibowo,Duck Young Chung,Arthur J Freeman,Bruce W. Wessels,Mercouri G. Kanatzidis +11 more
TL;DR: The perovskite compound CsPbBr3 as mentioned in this paper is a direct band gap semiconductor which meets most of the requirements for successful detection of X and γ-ray radiation, such as high attenuation, high resistivity, and significant photoconductivity response, with detector resolution comparable to that of commercial, state-of-the-art materials.
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Comparison of 6H-SiC, 3C-SiC, and Si for power devices
TL;DR: In this paper, the drift region properties of 6H- and 3C-SiC-based Schottky rectifiers and power MOSFETs that result in breakdown voltages from 50 to 5000 V are defined.
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Electronic measurement and control of spin transport in Silicon
TL;DR: Conduction-band spin transport across 10 μm undoped Si is demonstrated in a device that operates by spin-dependent ballistic hot-electron filtering through ferromagnetic thin films for both spin injection and spin detection, and confirms spin coherent drift in the conduction band of silicon.
Journal ArticleDOI
ATLAS pixel detector electronics and sensors
Georges Aad,M. Ackers,F. Alberti,M. Aleppo,Gianluca Alimonti,Jorge Alonso,E C Anderssen,A. Andreani,A. Andreazza,J-F. Arguin,K. E. Arms,Dario Barberis,Marco Barbero,M. Bazalova,R. Beccherle,K. H. Becks,Prafulla Kumar Behera,F. Bellina,J. Beringer,K. Bernardet,J. Biesiada,L. Blanquart,J. Boek,G. Boyd,P. Breugnon,Peter Buchholz,B. Butler,Massimo Caccia,A C Capsoni,C. Caso,D. Cauz,M Cepeda,R Cereseto,M. Cervetto,M. L. Chu,M. Citterio,J. C. Clemens,Yann Coadou,Marina Cobal,A. Coccaro,Simone Coelli,S. Correard,Markus Cristinziani,S. Cuneo,S. D'Auria,M. Dameri,Giovanni Darbo,S Dardin,B. De Lotto,U. De Sanctis,J. B. De Vivie De Regie,C. Del Papa,P. Delpierre,B. Di Girolamo,W. Dietsche,Fares Djama,Daniel Dobos,Mauro Donegà,Jens Dopke,Kevin Einsweiler,A. Eyring,D. Fasching,Lorenzo Feligioni,D.P.S. Ferguson,W. Fernando,Peter Fischer,M. J. Fisher,Tobias Flick,Guido Gagliardi,E. Galyaev,K. K. Gan,M Garcia-Sciveres,Nicoletta Garelli,G G Gariano,G. Gaycken,Claudia Gemme,P. Gerlach,M. G. D. Gilchriese,MarioPaolo Giordani,Danilo Giugni,K. W. Glitza,Claus Gössling,Tobias Golling,F Goozen,I. V. Gorelov,G. Gorfine,C. Grah,Heather Gray,I. M. Gregor,Joern Grosse-Knetter,K. Grybel,Phillip Gutierrez,Gregory David Hallewell,N. Hartman,Miroslav Havranek,Beate Heinemann,T. Henß,Martin Hoeferkamp,Dirk L. Hoffmann,M. Holder,W. Honerbach,C. Horn,S. R. Hou,G. S. Huang,Fabian Huegging,Elliot Hughes,Iskander Ibragimov,I Ilyashenko,M. Imhaeuser,J. M. Izen,J. Jackson,Dilip Jana,R. C. Jared,P. Jez,T.A. Johnson,J. Joseph,Harris Kagan,M. Karagounis,R. D. Kass,M Keil,Susanne Kersten,P. Kind,J. Klaiber-Lodewigs,Lasse Klingbeil,Reiner Klingenberg,Andreas Korn,Vadim Kostyukhin,I Kostyukhina,O. Krasel,Hans Krüger,K Krueger,J. Kudlaty,T Kuhl,O. Kvasnicka,Kerstin Lantzsch,T. Lari,S. Latorre,Shih-Chang Lee,Teresa Lenz,G. Lenzen,J. Lepidis,Jessica Levêque,M. Leyton,D. Lopez Mateos,K. F. Loureiro,D Lüke,L. Luisa,J. Lys,R. J. Madaras,P. Mättig,F M Manca,E. Mandelli,Michal Marcisovsky,Zach Marshall,German Martinez,Lucia Masetti,Martin Maß,M. Mathes,R McKay,G. Meddeler,R. Meera-Lebbai,Chiara Meroni,Jessica Metcalfe,W. T. Meyer,David Miller,Warner A. Miller,S. Montesano,Martin M. Monti,P. Morettini,Josh Moss,T Mouthuy,Polina Nechaeva,W. Ockenfels,G. A. Odino,M. Olcese,Bianca Osculati,Fabrizio Parodi,A Pekedis,K. Perez,Ivan Peric,C Pizzorno,J Popule,R Post,Francesco Ragusa,A. M. Rahimi,B. Raith,S. Rajek,Kendall Reeves,I. Reisinger,J. Richardson,E. I. Rosenberg,Leonardo Paolo Rossi,I. Rottländer,A. Rovani,Alexandre Rozanov,O. Runolfsson,E. Ruscino,A F Saavedra,F. Sabatini,M. Saleem,S. Sandvoss,B. Sanny,L. Santi,M I Scherzer,Carlo Schiavi,A. Schreiner,J. Schultes,Ariel Schwartzman,R Seibert,Sally Seidel,Horst Severini,S Shanava,Petr Sicho,P. Skubic,A C Smith,D.S. Smith,J. Snow,T. Stahl,T. Stockmanns,Sara Strandberg,Michael A. Strauss,Duc Ta,F. Tegenfeldt,P. K. Teng,R. Ter-Antonyan,J. Thadome,T. Tic,L. Tomášek,M Tomasek,F Tomasi,Konstantin Toms,C Tran,J. Treis,N. Triplett,Clara Troncon,Laurent Vacavant,S. Vahsen,Jan Valenta,G. Vegni,F. Vernocchi,E. Vigeolas,J. Virzi,E Viscione,Vaclav Vrba,J. Walbersloh,Wolfgang Walkowiak,J. Weber,T F Weber,Jens Weingarten,C Weldon,N. Wermes,Ulrich Werthenbach,J S Wirth,R. Witharm,B.H. Witt,M. Wittgen,J. Wuestenfeld,R. Wunstorf,J Wyckoff,W-M. Yao,C. Young,Remi Zaidan,M. Zdrazil,F. Zetti,J. Zhong,M. Ziolkowski,G. Zizka,M. M. Zoeller +267 more
TL;DR: In this article, the silicon pixel tracking system for the ATLAS experiment at the Large Hadron Collider is described and the performance requirements are summarized and detailed descriptions of the pixel detector electronics and the silicon sensors are given.
References
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Monte Carlo determination of electron transport properties in gallium arsenide
TL;DR: In this article, a Monte Carlo technique was used to calculate the electron distribution functions in the (000) and (100) valleys of gallium arsenide, and the structure of the distribution function was interpreted in terms of the energy dependence of the scattering processes, particular reference being made to the prediction of a population inversion for fields in excess of about 10 kV cm.
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Resistivity of bulk silicon and of diffused layers in silicon
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Hot electrons in germanium and Ohm's law
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