A single-mask substrate transfer technique for the fabrication of high-aspect-ratio micromachined structures
Abstract: In this paper, a single-mask substrate transfer process for the fabrication of high-aspect-ratio (HAR) suspended structures is presented. The HAR silicon structures are fabricated using a deep reactive ion etching (DRIE) technique and then transferred to a glass wafer using silicon/thin film/glass anodic bonding and silicon thinning techniques. The HAR structures are released using self-aligned wet etching of the glass. Two key processes are discussed. One is the silicon/thin film/glass anodic bonding, with special emphasis on the effect of the bonding material on the bonding shear strength. The other is the silicon backside thinning via aqueous solution of potassium hydroxide (KOH). A lateral RF MEMS switch has been fabricated and demonstrates low loss up to 25 GHz. This substrate transfer process has the advantages of high-aspect ratio, low loss and high flexibility.
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Citations
78 citations
Cites methods from "A single-mask substrate transfer te..."
...High-aspect-ratio microchannels are fabricated in a silicon wafer by plasma etching using the deep reactive ion etching (DRIE) technique and the Bosch process (Tang et al., 2007; Laermer and Schilp, 1996)....
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49 citations
Cites background from "A single-mask substrate transfer te..."
...Fig. 1 shows a wafer transfer fabrication process that specially developed for lateral DC-contact switches and switching circuits [ 6-8 ]....
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17 citations
Cites methods from "A single-mask substrate transfer te..."
...High-aspect-ratio microchannels are fabricated in a silicon wafer by plasma etching using the deep reactive ion etching (DRIE) technique and the Bosch process (Tang et al., 2007; Laermer and Schilp, 1996)....
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15 citations
6 citations
Cites methods from "A single-mask substrate transfer te..."
...A substrate transfer process is developed for the fabrication of the SPDT switching circuit on a 500 μm thick 8′′ glass (Pyrex 7740) substrate [25]....
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References
291 citations
184 citations
"A single-mask substrate transfer te..." refers methods in this paper
...Then, the movable structures are released using wet etching of the buried oxide or DRIE over etching [3, 4]....
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154 citations
"A single-mask substrate transfer te..." refers methods in this paper
...A bulk silicon dissolved wafer process is developed in such a way to fabricate 1–25 μm thick movable devices on a glass substrate, in which device structures are etched on a silicon wafer and are heavily boron doped, then the silicon wafer is anodically bonded to a glass followed by the silicon dissolving to leave heavily boron doped devices attached to the glass substrate [8]....
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110 citations
"A single-mask substrate transfer te..." refers background in this paper
...To quantitatively evaluate the bonding quality, the tensile strength measurement is conducted commonly [12, 13]....
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105 citations