Journal ArticleDOI
A spin-valve-like magnetoresistance of an antiferromagnet-based tunnel junction
Byong-Guk Park,Joerg Wunderlich,Xavi Marti,Václav Holý,Yosuke Kurosaki,M. Yamada,H. Yamamoto,Akinori Nishide,J. Hayakawa,H. Takahashi,Alexander B. Shick,Tomas Jungwirth +11 more
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TLDR
This work demonstrates a spintronic element whose transport characteristics are governed by an antiferromagnet and demonstrates that sensitivity to low magnetic fields can be combined with large, spin-orbit-coupling-induced magnetotransport anisotropy using a single magnetic electrode.Abstract:
Spin-valve structures used in modern hard-drive read heads and magnetic random access memories comprise two ferromagnetic electrodes. It is now shown that antiferromagnets can be used as electrodes in spin valves. The results open a wide range of new possibilities for the choice of materials for spintronics devices.read more
Citations
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Journal ArticleDOI
Antiferromagnetic spintronics
TL;DR: This Review focuses on recent works that have addressed how to manipulate and detect the magnetic state of an antiferromagnet efficiently and briefly mentions the broader context of spin transport, magnetic textures and dynamics, and materials research.
Journal ArticleDOI
New perspectives for Rashba spin–orbit coupling
TL;DR: Bychkov and Rashba as discussed by the authors introduced a simple form of spin-orbit coupling to explain the peculiarities of electron spin resonance in two-dimensional semiconductors, which has inspired a vast number of predictions, discoveries and innovative concepts far beyond semiconductor devices.
Journal ArticleDOI
Antiferromagnetic spintronics
TL;DR: A review of the most prominent spintronic effects described based on theoretical and experimental analysis of antiferromagnetic materials can be found in this article, where the authors discuss some of the remaining bottlenecks and suggest possible avenues for future research.
Journal ArticleDOI
Large anomalous Hall effect in a non-collinear antiferromagnet at room temperature
TL;DR: Empirical evidence is reported for a large anomalous Hall effect in an antiferromagnet that has vanishingly small magnetization, which could be useful for various applications including spintronics—for example, to develop a memory device that produces almost no perturbing stray fields.
Journal ArticleDOI
Electrical switching of an antiferromagnet.
Peter Wadley,B. Howells,J. Železný,J. Železný,C. Andrews,V. Hills,R. P. Campion,Vít Novák,K. Olejník,Francesco Maccherozzi,Sarnjeet S. Dhesi,S. Y. Martin,Thomas Wagner,Thomas Wagner,Joerg Wunderlich,Joerg Wunderlich,Frank Freimuth,Yuriy Mokrousov,Jan Kuneš,J.S. Chauhan,M.J. Grzybowski,M.J. Grzybowski,A. W. Rushforth,K. W. Edmonds,B. L. Gallagher,Tomas Jungwirth +25 more
TL;DR: In this paper, the authors demonstrate room-temperature electrical switching between stable configurations in antiferromagnetic CuMnAs thin-film devices by applied current with magnitudes of order 106 ampere per square centimeter.
References
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Journal ArticleDOI
The emergence of spin electronics in data storage
Claude Chappert,Claude Chappert,Albert Fert,Albert Fert,Frédéric Nguyen Van Dau,Frédéric Nguyen Van Dau +5 more
TL;DR: The authors are starting to see a new paradigm where magnetization dynamics and charge currents act on each other in nanostructured artificial materials, allowing faster, low-energy operations: spin electronics is on its way.
Journal ArticleDOI
Simple model for thin ferromagnetic films exchange coupled to an antiferromagnetic substrate
TL;DR: In this article, the authors show that the exchange field of a thin exchange coupled ferromagnetic film reaches a limiting value no matter how large the exchange coupling is, due to domain wall formation in the antiferromagnet.
Journal ArticleDOI
Tunneling anisotropic magnetoresistance: a spin-valve-like tunnel magnetoresistance using a single magnetic layer.
Charles Gould,C. Rüster,Tomas Jungwirth,Tomas Jungwirth,E. Girgis,G. M. Schott,R. Giraud,Karl Brunner,Georg Schmidt,Laurens W. Molenkamp +9 more
TL;DR: A new class of spintronic devices in which aspin-valve-like effect results from strong spin-orbit coupling in a single ferromagnetic layer rather than from injection and detection of a spin-polarized current by two coupled ferromagnets is introduced.
Journal ArticleDOI
Theory of spin torques and giant magnetoresistance in antiferromagnetic metals
TL;DR: In this article, the critical current for order parameter orientation switching can be smaller in the antiferromagnetic case because of the absence of shape anisotropy and because spin torques can act through the entire volume of an Antiferromagnet.
Book ChapterDOI
Exchange Bias Effect of Ferro-/Antiferromagnetic Heterostructures
Florin Radu,Hartmut Zabel +1 more
TL;DR: In this article, the most important models for the exchange bias effect are reviewed and the most recent experiments in the light of the presented models are discussed, as well as recent experimental results.
Related Papers (5)
Electrical switching of an antiferromagnet.
Peter Wadley,B. Howells,J. Železný,J. Železný,C. Andrews,V. Hills,R. P. Campion,Vít Novák,K. Olejník,Francesco Maccherozzi,Sarnjeet S. Dhesi,S. Y. Martin,Thomas Wagner,Thomas Wagner,Joerg Wunderlich,Joerg Wunderlich,Frank Freimuth,Yuriy Mokrousov,Jan Kuneš,J.S. Chauhan,M.J. Grzybowski,M.J. Grzybowski,A. W. Rushforth,K. W. Edmonds,B. L. Gallagher,Tomas Jungwirth +25 more