FIG. 6. Trap concentration depth profile of the T2 defect obtained from the 700 C O2 annealed ZnO samples using the fixed bias variable pulse technique. This profile was obtained at a reverse bias of 2.0 V with increasing filling pulse in steps of 0.1 V from 0.5 V to 0.5 V. Figure 6(b). Trap concentration depth profile of the E3 defect obtained from the 700 C O2 annealed ZnO samples using the fixed bias variable pulse technique. This profile was obtained at a reverse bias of 2.0 V with increasing filling pulse in steps of 0.1 V from 0.5 V to 0.5 V.
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