Journal ArticleDOI
A Unipolar "Field-Effect" Transistor
W. Shockley
- Vol. 40, Iss: 11, pp 1365-1376
Reads0
Chats0
TLDR
In this article, the authors proposed a new form of transistor called unipolar field effect transistor, which is of the "field effect" type in which the conductivity of a layer of semiconductor is modulated by a transverse electric field.Abstract:
The theory for a new form of transistor is presented. This transistor is of the "field-effect" type in which the conductivity of a layer of semiconductor is modulated by a transverse electric field. Since the amplifying action involves currents carried pre-dominantly by one kind of carrier, the name "unipolar" is proposed to distinguish these transistors from point-contact and junction types, which are "bipolar" in this sense. Regarded as an analog for a vacuum-tube triode, the unipolar field-effect transistor may have a m? of 10 or more, high output resistance, and a frequency response higher than bipolar transistors of comparable dimensions.read more
Citations
More filters
Journal ArticleDOI
Alpha-power law MOSFET model and its applications to CMOS inverter delay and other formulas
Takayasu Sakurai,A.R. Newton +1 more
TL;DR: In this paper, an alpha-power-law MOS model that includes the carrier velocity saturation effect, which becomes prominent in short-channel MOSFETs, is introduced and closed-form expressions for the delay, short-circuit power, and transition voltage of CMOS inverters are derived.
Journal ArticleDOI
The resonant gate transistor
TL;DR: In this paper, the resonant gate transistor (RGT) is described as an electrostatically excited tuning fork employing field effect transistor readout, which can be batch-fabricated in a manner consistent with silicon technology.
Journal ArticleDOI
Steady-State and Transient Behavior of Organic Electrochemical Transistors
TL;DR: In this paper, a simple model that reproduces the steady-state and transient response of OECTs by considering these devices in terms of an ionic and an electronic circuit is presented.
Book ChapterDOI
Signal and Noise Properties of Gallium Arsenide Microwave Field-Effect-Transistors
TL;DR: In this article, the authors examined the signal and noise properties of gallium arsenide (GaAs) microwave field effect transistors (FETs) and found that radiofrequency instabilities due to this region, if they exist, occur at frequencies far above the normal frequency regime of microwave FETs.
Journal ArticleDOI
Field-effect transistor versus analog transistor (static induction transistor)
TL;DR: The Static Induction Transistor (SIT) as discussed by the authors is a transistor similar to that of the vacuum tube triode type that exhibits the nonsaturated build-up character only when the internal negative feedback action is as little as G{m'} \simeq G_{m}.
References
More filters
Journal ArticleDOI
Statistics of the Recombinations of Holes and Electrons
William Shockley,W. T. Read +1 more
TL;DR: In this article, the statistics of the recombination of holes and electrons in semiconductors were analyzed on the basis of a model in which the recombinations occurred through the mechanism of trapping.
Journal ArticleDOI
The theory of p-n junctions in semiconductors and p-n junction transistors
TL;DR: The theory of potential distribution and rectification for p-n junctions is developed with emphasis on germanium, resulting in an admittance for a simple case varying as (1 + iωτ p )1/2 where τ p is the lifetime of a hole in the n-region.
Journal ArticleDOI
Surface States and Rectification at a Metal Semi-Conductor Contact
TL;DR: In this article, it was shown that if contact is made with a metal, the difference in work function between metal semi-conductor is compensated by surface states charge, rather than by a space charge as is independent of the metal.
Journal ArticleDOI
Hot electrons in germanium and Ohm's law
TL;DR: In this article, the data of E. J. Ryder on the mobility of electrons in electric fields up to 40,000 volts per cm are analyzed and it is estimated that electron “temperatures as high as 4000°K have been produced in specimens having temperatures of atomic vibration of 300° K.