Journal ArticleDOI
About the Electrical Activation of 1×1020 cm-3 Ion Implanted Al in 4H-SiC at Annealing Temperatures in the Range 1500 - 1950°C
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In this article, the electrical activation of 1×1020 cm-3 implanted Al in 4H-SiC has been studied in the temperature range 1500 - 1950 °C by the analysis of the sheet resistance of the Al implanted layers, as measured at room temperature.Abstract:
The electrical activation of 1×1020 cm-3 implanted Al in 4H-SiC has been studied in the temperature range 1500 - 1950 °C by the analysis of the sheet resistance of the Al implanted layers, as measured at room temperature. The minimum annealing time for reaching stationary electrical at fixed annealing temperature has been found. The samples with stationary electrical activation have been used to estimate the thermal activation energy for the electrical activation of the implanted Al.read more
Citations
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Effect of high temperature annealing (T > 1650 °C) on the morphological and electrical properties of p-type implanted 4H-SiC layers
Monia Spera,Monia Spera,Domenico Corso,S. Di Franco,Giuseppe Greco,Andrea Severino,Patrick Fiorenza,Filippo Giannazzo,Fabrizio Roccaforte +8 more
TL;DR: In this article, the effect of high temperature annealing on the electrical properties of p-type implanted 4H-SiC was investigated and the results gave useful indications for the fabrication of 4HSiC JBS and MOSFETs.
Journal ArticleDOI
Selective Doping in Silicon Carbide Power Devices.
TL;DR: In this paper, the main features of n-type and p-type ion-implantation doping of SiC and related issues are discussed and a short overview of recently developed non-conventional doping and annealing techniques is also provided.
Journal ArticleDOI
MD simulation study on defect evolution and doping efficiency of p-type doping of 3C-SiC by Al ion implantation with subsequent annealing
Jintong Wu,Zongwei Xu,Lei Liu,Alexander Hartmaier,Mathias Rommel,Kai Nordlund,Tao Wang,Rebecca Janisch,Junlei Zhao +8 more
TL;DR: In this article, the authors used molecular dynamics simulations with numerical characterisation and statistical analysis to study the mechanisms of damage evolution and p-type doping efficiency by aluminum ion implantation into 3C silicon carbide (SiC) with subsequent annealing.
Journal ArticleDOI
Transient model for electrical activation of aluminium and phosphorus-implanted silicon carbide
TL;DR: In this paper, a transient model for electrical activation of implanted aluminium and phosphorus in silicon carbide was introduced to fill the gap of accurate description of the electrical properties of impurities.
Journal ArticleDOI
Ion Implantation Doping in Silicon Carbide and Gallium Nitride Electronic Devices
TL;DR: In this article , the main issues related to ion implantation doping technology for SiC and GaN electronic devices are briefly reviewed and some specific literature case studies are illustrated to describe the impact of the ion implantion doping conditions (annealing temperature, electrical activation and doping profiles, surface morphology, creation of interface states, etc.) on the electrical parameters of power devices.
References
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Book
Fundamentals of Silicon Carbide Technology: Growth, Characterization, Devices and Applications
Tsunenobu Kimoto,James A. Cooper +1 more
TL;DR: A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications is provided in this paper. But the authors focus on the SiC Schottky barrier diodes (SBDs) and do not provide an in-depth reference for scientists and engineers working in this field.
Journal ArticleDOI
Carbon-Cap for Ohmic Contacts on Ion-Implanted 4H-SiC
Roberta Nipoti,Fulvio Mancarella,Francesco Moscatelli,Rita Rizzoli,Stefano Zampolli,M. Ferri +5 more
TL;DR: In this paper, a pyrolyzed photoresist film called carbon-cap (C-cap) is used as a protective cap of the surface of ion-implanted 4H-SiC wafers during the postimplantation annealing process with the aim to prevent Si sublimation and step bunching formation.
Journal ArticleDOI
Conventional thermal annealing for a more efficient p-type doping of Al + implanted 4H-SiC
TL;DR: In this article, the p-type doping of high purity semi-insulating 4H polytype silicon carbide (HPSI 4H-SiC) by aluminum ion (Al+) implantation has been studied in the range of 1 × 1019 to 8 × 1020 /cm3 and a conventional thermal annealing of 1950 °C/5 min.
Journal ArticleDOI
Dynamic annealing in ion implanted SiC: Flux versus temperature dependence
TL;DR: Partial financial support for this work was received from the Swedish Foundation for Strategic Research (SSF), the Sweden Foundation for International Cooperation in Research and Higher Education (STINT), the Norwegian Research Council (NFR), and the Nordic Academy for Education and Research Training (NorFA).
Journal ArticleDOI
Ion implantation range distributions in silicon carbide
TL;DR: The first to fourth order distribution moments, Rp, ΔRp, γ, and β, of 152 single energy 1H, 2H, 7Li, 11B, 14N, 16O, 27Al, 31P, 69Ga, and 75As implantations into silicon carbide (SiC) have been assembled.
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