Journal ArticleDOI
Academic and industry research progress in germanium nanodevices
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TLDR
Germanium-based transistors have the potential to operate at high speeds with low power requirements and might therefore be used in non-silicon-based semiconductor technology in the future.Abstract:
Silicon has enabled the rise of the semiconductor electronics industry, but it was not the first material used in such devices. During the 1950s, just after the birth of the transistor, solid-state devices were almost exclusively manufactured from germanium. Today, one of the key ways to improve transistor performance is to increase charge-carrier mobility within the device channel. Motivated by this, the solid-state device research community is returning to investigating the high-mobility material germanium. Germanium-based transistors have the potential to operate at high speeds with low power requirements and might therefore be used in non-silicon-based semiconductor technology in the future.read more
Citations
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Journal ArticleDOI
Insights of the role of shell closing model and NICS in the stability of NbGen (n = 7–18) clusters: a first-principles investigation
TL;DR: In this article, the properties of neutral and cationic Nb-doped Gen (n) clusters are systematically investigated under the first-principles density functional theory approach.
Journal ArticleDOI
Structural evolution and magnetic properties of anionic clusters Cr 2 Ge n (n = 3-14): photoelectron spectroscopy and density functional theory computation.
Xiaoqing Liang,Xiang-Yu Kong,Sheng-Jie Lu,Yingying Huang,Jijun Zhao,Hong-Guang Xu,Wei-Jun Zheng,Xiao Cheng Zeng +7 more
TL;DR: The [Formula: see text] cluster is the first kind of transition-metal doped semiconductor clusters that exhibit relatively stable antiferromagnetism within a wide size range.
Journal ArticleDOI
Low temperature deactivation of Ge heavily n-type doped by ion implantation and laser thermal annealing
R. Milazzo,Giuliana Impellizzeri,Davide Piccinotti,Davide Piccinotti,D. De Salvador,Alain Portavoce,A. La Magna,Guglielmo Fortunato,Dominique Mangelinck,V. Privitera,Alberto Carnera,Enrico Napolitani +11 more
TL;DR: In this paper, the authors show that heavy doping of Ge is crucial for several advanced micro-and optoelectronic applications, but, at the same time, it still remains extremely challenging.
Journal ArticleDOI
Hexagonal germanium formation at room temperature using controlled penetration depth nano-indentation
TL;DR: The inelastic deformation mechanism is found to depend critically on the indentation penetration depth and can be reliably used to induce phase transformation in Ge-on-Si with technological interest as a narrow band gap material for mid-wavelength infrared detection.
Journal ArticleDOI
Low percolation density and charge noise with holes in germanium
Mario Lodari,N.W. Hendrickx,W. I. L. Lawrie,T.-K. Hsiao,Lieven M. K. Vandersypen,Amir Sammak,Menno Veldhorst,Giordano Scappucci +7 more
TL;DR: In this article, a planar Ge/SiGe heterostructures for low disorder and quiet hole quantum dot operation were proposed, where the strained Ge channel was placed 55nm below the semiconductor/dielectric interface.
References
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Proceedings ArticleDOI
A 45nm Logic Technology with High-k+Metal Gate Transistors, Strained Silicon, 9 Cu Interconnect Layers, 193nm Dry Patterning, and 100% Pb-free Packaging
Kaizad Mistry,C. Allen,C. Auth,B. Beattie,Daniel B. Bergstrom,M. Bost,M. Brazier,M. Buehler,Annalisa Cappellani,R. Chau,C. H. Choi,G. Ding,K. Fischer,Tahir Ghani,R. Grover,W. Han,D. Hanken,M. Hattendorf,J. He,J. Hicks,R. Huessner,D. Ingerly,Pulkit Jain,R. James,L. Jong,Subhash M. Joshi,C. Kenyon,K. Kuhn,K. Lee,Huichu Liu,J. Maiz,B. Mclntyre,P. Moon,J. Neirynck,S. Pae,C. Parker,D. Parsons,Chetan Prasad,L. Pipes,M. Prince,Pushkar Ranade,T. Reynolds,J. Sandford,Lucian Shifren,J. Sebastian,J. Seiple,D. Simon,Swaminathan Sivakumar,Pete Smith,C. Thomas,T. Troeger,P. Vandervoorn,S. Williams,K. Zawadzki +53 more
TL;DR: In this paper, a 45 nm logic technology is described that for the first time incorporates high-k + metal gate transistors in a high volume manufacturing process, resulting in the highest drive currents yet reported for NMOS and PMOS.
Proceedings ArticleDOI
A 90nm high volume manufacturing logic technology featuring novel 45nm gate length strained silicon CMOS transistors
Tahir Ghani,Mark Armstrong,C. Auth,M. Bost,P. Charvat,G. Glass,T. Hoffmann,K. Johnson,C. Kenyon,Jason Klaus,B. McIntyre,Kaizad Mistry,Anand Portland Murthy,J. Sandford,M. Silberstein,Swaminathan Sivakumar,Pete Smith,K. Zawadzki,Scott E. Thompson,M. Bohr +19 more
TL;DR: In this article, the authors describe a novel strained transistor architecture which is incorporated into a 90nm logic technology on 300mm wafers, which features an epitaxially grown strained SiGe film embedded in the source drain regions.
Journal ArticleDOI
Controlling threading dislocation densities in Ge on Si using graded SiGe layers and chemical-mechanical polishing
TL;DR: In this paper, a method of controlling threading dislocation densities in Ge on Si involving graded SiGe layers and chemical-mechanical polishing (CMP) is presented.
Journal ArticleDOI
High-k/Ge MOSFETs for future nanoelectronics
TL;DR: In this article, the opportunities and challenges of high-k/Ge MOSFETs are discussed on the basis of the material properties of Ge oxide to provide insights for future progress.
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