Journal ArticleDOI
Academic and industry research progress in germanium nanodevices
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TLDR
Germanium-based transistors have the potential to operate at high speeds with low power requirements and might therefore be used in non-silicon-based semiconductor technology in the future.Abstract:
Silicon has enabled the rise of the semiconductor electronics industry, but it was not the first material used in such devices. During the 1950s, just after the birth of the transistor, solid-state devices were almost exclusively manufactured from germanium. Today, one of the key ways to improve transistor performance is to increase charge-carrier mobility within the device channel. Motivated by this, the solid-state device research community is returning to investigating the high-mobility material germanium. Germanium-based transistors have the potential to operate at high speeds with low power requirements and might therefore be used in non-silicon-based semiconductor technology in the future.read more
Citations
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Journal ArticleDOI
Investigation of electrochemical reduction of GeO2 to Ge in molten CaCl2-NaCl
TL;DR: In this article, the reduction of solid GeO2 to Ge occurred at a potential of about -0.50-V (vs. Ag/Ag+), but generating various calcium germanates simultaneously, whose reduction was a little more difficult and needed a potential more negative than -1.00-V.
Journal ArticleDOI
Fully Depleted Ge CMOS Devices and Logic Circuits on Si
Heng Wu,Peide D. Ye +1 more
TL;DR: In this article, the authors systematically studied Ge CMOS devices and logic circuits fabricated on a GeOI substrate, with the novel recessed channel and source/drain structures.
Journal ArticleDOI
A Ruthenium Dihydrogen Germylene Complex and the Catalytic Synthesis of Digermoxane
Katharine A. Smart,Katharine A. Smart,Emmanuelle Mothes-Martin,Emmanuelle Mothes-Martin,Laure Vendier,Laure Vendier,Robin N. Perutz,Mary Grellier,Mary Grellier,Sylviane Sabo-Etienne,Sylviane Sabo-Etienne +10 more
TL;DR: A germylene complex with a labile η2-H2 coligand, [RuH2(═GePh2)(η 2-H 2)(PCy3)2] (2), was isolated in very good yield from the reaction of the bis(dihydrogen) complex with Ph2GeH2.
Journal ArticleDOI
Self focusing SIMS: probing thin film composition in very confined volumes
Alexis Franquet,Bastien Douhard,Davit Melkonyan,Davit Melkonyan,Paola Favia,Thierry Conard,Wilfried Vandervorst,Wilfried Vandervorst +7 more
TL;DR: In this article, a self focusing SIMS (SFSSIMS) approach is proposed to determine the composition of a specific compound using cluster ions which contain the constituents of the compound.
Journal ArticleDOI
Ge nanoparticles in SiO 2 for near infrared photodetectors with high performance
Ionel Stavarache,Valentin S. Teodorescu,P. Prepelita,Constantin Logofatu,Magdalena Lidia Ciurea +4 more
TL;DR: This work prepared films of amorphous germanium nanoparticles embedded in SiO2 deposited by magnetron sputtering on Si and quartz heated substrates at 300, 400 and 500 °C and investigated structure, morphology, optical, electrical and photoconduction properties.
References
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