Journal ArticleDOI
Academic and industry research progress in germanium nanodevices
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TLDR
Germanium-based transistors have the potential to operate at high speeds with low power requirements and might therefore be used in non-silicon-based semiconductor technology in the future.Abstract:
Silicon has enabled the rise of the semiconductor electronics industry, but it was not the first material used in such devices. During the 1950s, just after the birth of the transistor, solid-state devices were almost exclusively manufactured from germanium. Today, one of the key ways to improve transistor performance is to increase charge-carrier mobility within the device channel. Motivated by this, the solid-state device research community is returning to investigating the high-mobility material germanium. Germanium-based transistors have the potential to operate at high speeds with low power requirements and might therefore be used in non-silicon-based semiconductor technology in the future.read more
Citations
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Journal ArticleDOI
Approaching strain limit of two-dimensional MoS2 via chalcogenide substitution
Kailang Liu,Xiang Chen,Penglai Gong,Ruohan Yu,Jinsong Wu,Liang Li,Wei Han,Sanjun Yang,Chendong Zhang,Jinghao Deng,Aoju Li,Qingfu Zhang,Fuwei Zhuge,Tianyou Zhai +13 more
TL;DR: In this paper, a chalcogenide substitution reaction (CSR) of MoTe2 with lattice inheritance was proposed for the fabrication of highly strained MoS2/MoTe2.
Dissertation
GeSn semiconductor for micro-nanoelectronic applications
TL;DR: In this article, Galluccio et al. presented a GeSn semiconductor for micro-nanoelectronic applications for the purpose of micro-noelectric applications.
Journal ArticleDOI
Epitaxial-Template Structure Utilizing Ge-on-Insulator Stripe Arrays with Nanospacing for Advanced Heterogeneous Integration on Si Platform
TL;DR: In this article, a possible Ge-on-insulator (GOI) structure, namely, stripe arrays with nanospacing, was proposed as a promising epitaxial template structure for the Ge epitaxia layer.
Journal ArticleDOI
Amorphous inclusions during Ge and GeSn epitaxial growth via chemical vapor deposition
Federica Gencarelli,Yosuke Shimura,Arul Kumar,Benjamin Vincent,Alain Moussa,D. Vanhaeren,O. Richard,Hugo Bender,Wilfried Vandervorst,Matty Caymax,Roger Loo,Marc Heyns +11 more
TL;DR: In this paper, the characteristics of particular island-type features with an amorphous core are developed during the low temperature epitaxial growth of Ge and GeSn layers by means of chemical vapor deposition with Ge2H6.
Proceedings ArticleDOI
RTN and low frequency noise on ultra-scaled near-ballistic Ge nanowire nMOSFETs
TL;DR: In this paper, the authors present the first observation of random telegraph noise in ultra-scaled Ge nanowire (NW) nMOSFETs and study the impacts of channel geometry, channel length, EOT, and channel doping on low frequency noise.
References
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