Journal ArticleDOI
Academic and industry research progress in germanium nanodevices
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TLDR
Germanium-based transistors have the potential to operate at high speeds with low power requirements and might therefore be used in non-silicon-based semiconductor technology in the future.Abstract:
Silicon has enabled the rise of the semiconductor electronics industry, but it was not the first material used in such devices. During the 1950s, just after the birth of the transistor, solid-state devices were almost exclusively manufactured from germanium. Today, one of the key ways to improve transistor performance is to increase charge-carrier mobility within the device channel. Motivated by this, the solid-state device research community is returning to investigating the high-mobility material germanium. Germanium-based transistors have the potential to operate at high speeds with low power requirements and might therefore be used in non-silicon-based semiconductor technology in the future.read more
Citations
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Journal ArticleDOI
Copper atomic-scale transistors
Fangqing Xie,Maryna N. Kavalenka,Moritz Röger,Daniel Albrecht,Hendrik Hölscher,Jürgen Leuthold,Thomas Schimmel +6 more
TL;DR: The copper atomic-scale transistor demonstrates volatile/non-volatile dual functionalities, and an optimal merging of the logic with memory may open a perspective for processor-in-memory and logic- in-memory architectures, using copper as an alternative working material besides silver for fully metallic atomic- scale transistors.
Journal ArticleDOI
Impact of Dummy Gate Removal and a Silicon Cap on the Low-Frequency Noise Performance of Germanium nFinFETs
TL;DR: In this article, the impact of different process options on the low-frequency noise performance and reliability of Ge nFinFETs was investigated, and it was shown that the LFN is mainly determined by carrier number fluctuations, and the density of traps in the high-kappa $ dielectric can be reduced by an extended dry clean.
Journal ArticleDOI
Quantum information memory based on reconfigurable topological insulators by piezotronic effect
TL;DR: In this article, the authors theoretically investigated the piezotronic effect on topological insulators based on GaAs/Ge/GaAs quantum well with two quantum point contacts (QPCs).
Journal ArticleDOI
Thickness-dependent elastic strain in Stranski–Krastanow growth
TL;DR: A new theory is constructed for calculating the parameters of the formed islands, generalizing previously used thermodynamic models, under the assumption that lattice mismatch depends on the thickness of the deposited material.
Journal ArticleDOI
Hole mobility degradation by remote Coulomb scattering and charge distribution in Al 2 O 3 /GeO x gate stacks in bulk Ge pMOSFET with GeO x grown by ozone oxidation
TL;DR: In this article, the authors investigated the effect of remote Coulomb scattering (RCS) on hole mobility degradation due to fixed charges in a gate stack of a metal-oxide-semiconductor field effect transistor (pMOSFET).
References
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